Method for fabricating a three-dimensional acceleration sensor
First Claim
1. A method for fabricating a three-dimensional acceleration sensor, comprising:
- providing a semiconductor substrate having first and second surfaces;
forming an insulating layer on the first surface of the semiconductor substrate;
forming an active layer on the insulating layer;
selectively removing a portion of the semiconductor substrate so as to define a first boundary of a movable mass;
forming a plurality of openings in the active layer at a first region, the first region being located above the movable mass and occupying a predetermined space;
selectively removing a portion of the insulating layer located under the first region in a wet-etching process through the plurality of openings so as to define a second boundary of the movable mass; and
after said forming a plurality of openings, selectively removing a portion of the active layer to form a groove separating the first region from the movable mass, so as to define a third boundary of the movable mass, wherein the movable mass comprises a remaining portion of the semiconductor substrate, a remaining portion of the insulating layer, and a remaining portion of the active layer.
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Abstract
According to the present invention, a method for fabricating a three-dimensional acceleration sensor, comprising: providing a semiconductor substrate having first and second surfaces; forming an insulating layer on the first surface of the semiconductor substrate; forming an active layer on the insulating layer; forming a plurality of openings on the active layer at a first region, which is to be located above a movable mass with a predetermined space; selectively removing the insulating layer located under the first region in a wet-etching process through the plurality of openings; and selectively removing the active layer to form a groove separating the first region from a movable mass.
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Citations
24 Claims
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1. A method for fabricating a three-dimensional acceleration sensor, comprising:
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providing a semiconductor substrate having first and second surfaces; forming an insulating layer on the first surface of the semiconductor substrate; forming an active layer on the insulating layer; selectively removing a portion of the semiconductor substrate so as to define a first boundary of a movable mass; forming a plurality of openings in the active layer at a first region, the first region being located above the movable mass and occupying a predetermined space; selectively removing a portion of the insulating layer located under the first region in a wet-etching process through the plurality of openings so as to define a second boundary of the movable mass; and after said forming a plurality of openings, selectively removing a portion of the active layer to form a groove separating the first region from the movable mass, so as to define a third boundary of the movable mass, wherein the movable mass comprises a remaining portion of the semiconductor substrate, a remaining portion of the insulating layer, and a remaining portion of the active layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for fabricating a three-dimensional acceleration sensor, comprising:
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providing a semiconductor substrate having first and second surfaces; forming an insulating layer on the first surface of the semiconductor substrate; forming an active layer on the insulating layer; selectively removing a portion of the semiconductor substrate so as to form a first boundary of a movable mass; providing a glass plate on the second surface of the semiconductor substrate; forming a plurality of openings on the active layer at a first region, the first region being located above the movable mass and occupying a predetermined space; selectively removing a portion of the insulating layer located under the first region in a wet-etching process through the plurality of openings so as to define a second boundary of the movable mass; and after said forming a plurality of openings, selectively removing a portion of the active layer to form a groove separating the first region from the movable mass, so as to form a third boundary of the movable mass, wherein the movable mass comprises a remaining portion of the semiconductor substrate, a remaining portion of the insulating layer, and a remaining portion of the active layer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method for fabricating a three-dimensional acceleration sensor, comprising:
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providing a semiconductor substrate having first and second surfaces; forming an insulating layer on the first surface of the semiconductor substrate; forming an active layer on the insulating layer; selectively removing the semiconductor substrate to form a first boundary of a movable mass; providing a glass plate on the second surface of the semiconductor substrate; forming a plurality of openings on the active layer at a first region, which is to be located above the movable mass with a predetermined space; selectively removing the insulating layer located under the first region so as to form a second boundary of the movable mass; selectively removing the active layer to form a groove separating the first region from the movable mass, so as to form a third boundary of the movable mass, wherein the movable mass comprises a remaining portion of the semiconductor substrate, a remaining portion of the insulating layer, and a remaining portion of the active layer; and selectively removing the insulating layer located under the groove after the step of removing the insulating layer located under the first region. - View Dependent Claims (24)
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Specification