MEMS sensor systems and methods

• US 7,237,437 B1
• Filed: 10/27/2005
• Issued: 07/03/2007
• Est. Priority Date: 10/27/2005
• Status: Expired due to Fees

• Current Assignee: Honeywell International Inc.
• Original Assignee: Honeywell International Inc.
• Inventors: Fedora, Neal R.
• Primary Examiner(s): KWOK, HELEN C
• Application Number:
  US11/260,817
• Time in Patent Office: 614 Days
• Field of Search: 735/10, 735/11, 734/93, 734/31
• US Class Current: 73/510
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2201/0242 Gyroscopes
• CPC Class Codes: B81B 7/0074 3D packaging, i.e. encapsulation containing one or several MEMS devices arranged in planes non-parallel to the mounting board
• CPC Class Codes: B81C 3/002 Aligning microparts
• CPC Class Codes: G01P 1/023 for acceleration measuring devices
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/18 in two or more dimensions

Abstract

MEMS Sensor Systems and Methods are provided. In one embodiment, a method for producing a six degree of freedom inertial sensor is provided. The method comprises fabricating a first silicon wafer segment having at least one inertial sensor pair, the at least one inertial sensor pair comprising one or both of a pair of orthogonally oriented accelerometers and a pair of orthogonally oriented gyroscopes; fabricating a second silicon wafer segment having at least one inertial sensor, the at least one inertial sensor comprising one or both of an accelerometer and a gyroscope; assembling together the first silicon wafer segment and the second silicon wafer segment such that the at least one inertial sensor pair and the at least one inertial sensor are oriented orthogonal to each other; and bonding the first silicon wafer segment to the second silicon wafer segment.

Claims

1. A six degree of freedom inertial sensor, the sensor comprising:

a first silicon wafer segment comprising at least one inertial sensor pair fabricated from the first silicon wafer segment;

a second silicon wafer segment comprising at least one inertial sensor fabricated from the second silicon wafer segment;

wherein the at least one inertial sensor pair comprises at least one of an accelerometer pair and a gyroscope pair;

wherein the at least one inertial sensor comprises at least one of an accelerometer and a gyroscope; and

wherein the first silicon wafer segment and the second silicon wafer segment are bonded together such the at least one inertial sensor pair and the at least one inertial sensor are orientated orthogonal to each other.

2. The sensor of claim 1, wherein one or both of the first silicon wafer segment and the second silicon wafer segment further comprise one or more additional inertial sensors, wherein the one or more additional inertial sensors comprises one or more of an accelerometer and a gyroscope.

3. The sensor of claim 1, further comprising

at least one contact bridge adapted to electrically couple the first silicon wafer segment to the second silicon wafer segment.

4. The sensor of claim 1, wherein the accelerometer pair comprises a pair of capacitive pendulous accelerometers;

and

wherein the at least one of an accelerometer and a gyroscope comprises a capacitive pendulous accelerometers.

5. The sensor of claim 1, wherein the gyroscope pair comprises a pair of vibratory-rate gyroscopes;

and

wherein the at least one of an accelerometer and a gyroscope comprises a vibratory-rate gyroscope.

6. The sensor of claim 1, wherein the first silicon wafer segment and the second silicon wafer segment are bonded together with a silicon fusion bonding.

7. A six degree of freedom inertial sensor, the sensor comprising:

means for detecting one or both of acceleration and motion in a direction of a first axis;

means for detecting one or both of acceleration and motion in a direction of a second axis orthogonal with the first axis;

means for detecting one or both of acceleration and motion in a direction of a third axis orthogonal with the first axis and the second axis;

wherein the means for detecting one or both of acceleration and motion in a direction of a first axis and the means for detecting one or both of acceleration and motion in a direction of a second axis are fabricated from a first silicon wafer and the means for detecting one or both of acceleration and motion in a direction of a third axis is fabricated from a second silicon wafer; and

means for bonding the first silicon wafer to the second silicon wafer.

8. The sensor of claim 7, further comprising:

means for electrically coupling the first silicon wafer with the second silicon wafer.

9. The sensor of claim 7, wherein one or more of the means for detecting acceleration in a direction of a first axis, the means for detecting acceleration in a direction of a second axis, and the means for detecting acceleration in a direction of a third axis comprise a capacitive pendulous accelerometers.

10. The sensor of claim 7, wherein one or more of the means for detecting motion in a direction of a first axis, the means for detecting motion in a direction of a second axis, and the means for detecting motion in a direction of a third axis comprise a vibratory-rate gyroscope.