Semiconductor device and method of fabricating the same
First Claim
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1. A method for manufacturing a semiconductor device comprising:
- forming a semiconductor film over a substrate;
crystallizing the semiconductor film by irradiating the semiconductor film with a laser light;
patterning the semiconductor film into semiconductor regions after the crystallizing step;
forming a gate insulating film on the semiconductor regions;
forming a gate electrode on the gate insulating film;
introducing a first impurity element into the semiconductor regions after forming the gate electrode;
forming a mask over a portion of the semiconductor regions after introducing the first impurity element;
introducing a second impurity element into the semiconductor regions over which the mask is not formed; and
performing a rapid thermal annealing after introducing the second impurity element.
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Abstract
Two kinds of TFTs are fabricated by the same process with a high production yield to manufacture an active-matrix circuit and a peripheral driver circuit on the same substrate. The active-matrix circuit is required to have a high mobility and a high ON/OFF current ratio. The peripheral driver circuit needs a complex interconnection structure. The active-matrix circuit and the peripheral driver circuit comprising the TFTs are fabricated monolithically. In this step, the gate electrodes of the TFTs of the active-matrix circuit is coated with an anodic oxide on their top and side surfaces. The gate electrodes of the TFTs of the peripheral driver circuit is coated with the anodic oxide on only their top surfaces; substantially no anodic oxide is present on the side surfaces.
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Citations
31 Claims
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1. A method for manufacturing a semiconductor device comprising:
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forming a semiconductor film over a substrate; crystallizing the semiconductor film by irradiating the semiconductor film with a laser light; patterning the semiconductor film into semiconductor regions after the crystallizing step; forming a gate insulating film on the semiconductor regions; forming a gate electrode on the gate insulating film; introducing a first impurity element into the semiconductor regions after forming the gate electrode; forming a mask over a portion of the semiconductor regions after introducing the first impurity element; introducing a second impurity element into the semiconductor regions over which the mask is not formed; and performing a rapid thermal annealing after introducing the second impurity element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a semiconductor device comprising:
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forming a semiconductor film over a substrate; crystallizing the semiconductor film by irradiating the semiconductor film with a laser light; patterning the semiconductor film into semiconductor regions after the crystallizing step; forming a gate insulating film on the semiconductor regions; forming a gate electrode on the gate insulating film; introducing a first impurity element into the semiconductor regions after forming the gate electrode; forming a mask over a portion of the semiconductor regions after introducing the first impurity element; introducing a second impurity element into the semiconductor regions over which the mask is not formed at a larger dose amount than that of the first impurity element; and performing a rapid thermal annealing after introducing the second impurity element. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A method for manufacturing a semiconductor device comprising:
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forming a semiconductor film over a substrate; crystallizing the semiconductor film by irradiating the semiconductor film with a laser light; patterning the semiconductor film into semiconductor regions after the crystallizing step; forming a gate insulating film on the semiconductor regions; forming a gate electrode on the gate insulating film; introducing a first impurity element into the semiconductor regions after forming the gate electrode; forming a mask over a portion of the semiconductor regions after introducing the first impurity element; introducing a second impurity element into the semiconductor regions over which the mask is not formed; and performing a rapid thermal annealing by irradiating the semiconductor regions with an infrared light after introducing the second impurity element. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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25. A method for manufacturing a semiconductor device comprising:
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forming a semiconductor film over a substrate; crystallizing the semiconductor film; patterning the semiconductor film into semiconductor regions after the crystallizing step; forming a gate insulating film on the semiconductor regions; forming a gate electrode on the gate insulating film; introducing a first impurity element into the semiconductor regions after forming the gate electrode; forming a mask over a portion of the semiconductor regions after introducing the first impurity element; introducing a second impurity element into the semiconductor regions over which the mask is not formed; and performing a rapid thermal annealing after introducing the second impurity element. - View Dependent Claims (26, 27, 28, 29, 30, 31)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsTakemura, Yasuhiko
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Primary Examiner(s)Nguyen; Tuan H.
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Application NumberUS11/045,129Publication NumberTime in Patent Office883 DaysField of Search438/151, 438/153, 438/163, 438/166, 438/795US Class Current438/166CPC Class CodesG09G 2300/0408 Integration of the drivers ...H01L 21/02422 Non-crystalline insulating ...H01L 21/02488 Insulating materialsH01L 21/02532 Silicon, silicon germanium,...H01L 21/02667 Crystallisation or recrysta...H01L 21/02686 Pulsed laser beamH01L 27/124 with a particular compositi...H01L 29/66757 Lateral single gate single ...Y10S 148/091 Laser beam processing of fets
