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Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and related Si-Ge-Sn-E and Si-Ge-E analogs

  • US 7,238,596 B2
  • Filed: 06/14/2004
  • Issued: 07/03/2007
  • Est. Priority Date: 06/13/2003
  • Status: Active Grant
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1. A method for synthesizing a compound having the formula E(GeH3)3 wherein E is selected from the group consisting of arsenic (As), antimony (Sb) and phosphorus (P), the method comprising combining GeH3Br with [(CH3)3Si]3E under conditions whereby E(GeH3)3 is obtained.

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