Photo-assisted method for semiconductor fabrication

• US 7,238,616 B2
• Filed: 03/28/2005
• Issued: 07/03/2007
• Est. Priority Date: 12/07/2000
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Agarwal, Vishnu K.
• Primary Examiner(s): Smith; Matthew
• Assistant Examiner(s): FOURSON III, GEORGE R
• Application Number:
  US11/090,204
• Publication Number:
  US 20050186789A1
• Time in Patent Office: 827 Days
• Field of Search: 438/681, 438/761, 438/788, 438/792, 257/E21.17
• US Class Current: 438/681
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: C23C 16/482 using incoherent light, UV to IR, e.g. lamps
• CPC Class Codes: H01J 37/32339 using electromagnetic radiation
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01L 21/022 the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides adhesion layers or buffer layers H01L21/02304, H01L21/02362
• CPC Class Codes: H01L 21/02274 in the presence of a plasma [PECVD]
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/3105 After-treatment
• CPC Class Codes: H01L 21/31051 Planarisation of the insulating layers H01L21/31058 takes precedence
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/314 Inorganic layers H01L21/3105, H01L21/32 take precedence
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/76864 Thermal treatment

Abstract

The present invention provides a processing system comprising a remote plasma activation region for formation of active gas species, a transparent transfer tube coupled between the remote activation region and a semiconductor processing chamber, and a source of photo-energy for maintaining activation of the active species or providing photo-energy for a non-plasma species during transfer through the transparent tube to the processing chamber. The source of photo-energy preferably includes an array of UV lamps. Additional UV lamps may also be used to further sustain active species and assist processes by providing additional in-situ energy through a transparent window of the processing chamber. The system can be utilized for processes such as layer-by-layer annealing and deposition and also removal of contaminants from deposited layers.

Claims

1. A method of fabricating a semiconductor device, comprising:

providing a substrate within a processing chamber;

forming a first layer over the substrate by generating an activated species in a remote plasma activation region and transferring said activated species from said remote plasma activation region through a conduit to said processing chamber, said activated species being maintained in an activated state by an array of photo-energy generators along at least a portion of said conduit; and

forming at least one second layer over said first layer by remotely generating said activated species and transferring said activated species to said processing chamber while maintaining its activated state.

2. The method of claim 1, wherein said first layer and said at least one second layer are each annealed subsequent to their forming.

3. The method of claim 1, wherein said first layer and said at least one second layer are each approximately 2 Angstroms to approximately 10 Angstroms thick.

4. The method of claim 1, wherein said forming of said at least one second layer is repeated until a desired thickness of a third layer comprising said first layer and said at least one second layer is achieved.

5. The method of claim 1, wherein said first layer and said at least one second layer are the same dielectric material.

6. The method of claim 1, wherein said first layer and said at least one second layer are the same conductive material.

7. The method of claim 1, wherein said array of photo-energy generators comprises ultraviolet lamps.

8. The method of claim 1, wherein said array of photo-energy generators comprises lasers.

14. The method of claim 6, wherein said first layer is approximately 2 Angstroms to approximately 10 Angstroms thick.

9. A method of fabricating a semiconductor device, comprising:

providing a substrate;

forming a layer over said substrate;

annealing said first layer within a processing chamber by generating an activated species in a plasma discharge remote from said processing chamber and transferring said activated species through a conduit to said processing chamber, wherein photo-energy generated by an array along said conduit maintains said activated species in an activated state during said transferring; and

repeating said forming and annealing steps to form a plurality of said layers of a desired total thickness.

10. The method of claim 9, wherein said layer is approximately 2 Angstroms to approximately 10 Angstroms thick.

11. The method of claim 9, wherein said array of photo-energy generators comprises ultraviolet lamps.

12. The method of claim 9, wherein said array of photo-energy generators comprises lasers.

13. A method of fabricating a semiconductor device, comprising:

providing a substrate within a processing chamber;

generating a first activated species in a plasma chamber at a remote location from said processing chamber;

transferring said first activated species from said plasma chamber through a conduit to said processing chamber, said conduit having a length and being provided with an array of photo-energy generators along at least a portion of said length, wherein photo-energy generated by said array maintains said first activated species in an activated state during said transferring;

depositing said first activated species over said substrate to form a first layer;

generating a second activated species in said plasma chamber;

transferring said second activated species from said plasma chamber through said conduit to said processing chamber, wherein said array maintains said second activated species in an activated state during said transferring;

annealing said first layer in the presence of said second activated species; and

repeating said depositing and annealing steps to form and anneal a second layer comprising a plurality of said first layers.

15. The method of claim 13, wherein said first layer is a conductive material.

16. The method of claim 13, wherein said array of photo-energy generators comprises ultraviolet lamps.

17. The method of claim 13, wherein said array of photo-energy generators comprises lasers.

18. A method of forming a semiconductor device, the method comprising:

forming a material layer over a substrate within a processing chamber, wherein said act of forming said material layer comprises exposing said substrate to a first precursor; and

reacting said first precursor with a second precursor, wherein at least one of said first and said second precursors is in the form of a plasma and both said first and second precursors are energized by photo-energy during transport to said processing chamber, only one of said first and second precursors being present at a time in said processing chamber in gas form and said plasma being formed prior to said energizing by photo-energy during transport to said processing chamber.

19. The method of claim 18, further comprising evacuating said first precursor from said processing chamber before introducing said second precursor to said processing chamber.

20. The method of claim 19, wherein said first precursor adsorbs to said substrate and said second precursor reacts with said first precursor thereafter.

21. The method of claim 18, wherein said first precursor comprises TiCl₄.

22. The method of claim 21, wherein said second precursor comprises NH₃.

23. The method of claim 18, wherein said array of photo-energy generators comprises ultraviolet lamps.

24. The method of claim 18, wherein said array of photo-energy generators comprises lasers.

25. A method of forming a semiconductor device, the method comprising:

providing a substrate within a processing chamber;

forming a first material layer over said substrate by exposing said substrate to a first precursor and at least one second precursor, wherein said first precursor is in the form of a plasma and both said first and at least one second precursors are energized by photo-energy during transport to said processing chamber, said plasma being formed prior to said energizing by photo-energy during transport to said processing chamber; and

repeating said forming step to form at least one second material layer over said first material layer.

26. The method of claim 25, further comprising annealing said first and at least one second material layers, wherein said step of annealing comprises exposing said substrate to at least one first annealing precursor, wherein said at least one first annealing precursor is in the form of a plasma and is energized by photo-energy during transport to said processing chamber.

27. The method of claim 25, further comprising annealing said first and at least one second material layers, wherein said step of annealing comprises exposing said substrate to at least one first annealing precursor, wherein said at least one first annealing precursor is energized by photo-energy during transport to said processing chamber.

28. A method of forming a semiconductor device, the method comprising:

providing a substrate within a processing chamber;

energizing a first and at least a second precursor by photo-energy during transport to said processing chamber, wherein at least one of said first and said second precursors is in the form of a plasma during said energizing;

forming a first material layer over said substrate by exposing said substrate to said first and at least second precursors; and

repeating said forming step to form at least a second material layer over said first material layer.

29. The method of claim 28, further comprising annealing said first and at least second material layers, wherein said step of annealing comprises exposing said substrate to at least a first annealing precursor, wherein said at least first annealing precursor is in the form of a plasma and is energized by photo-energy during transport to said processing chamber.

30. The method of claim 28, further comprising annealing said first and at least second material layers, wherein said step of annealing comprises exposing said substrate to at least a first annealing precursor, wherein said at least first annealing precursor is energized by photo-energy during transport to said processing chamber.