Method of forming silicided gate structure
First Claim
1. A method of forming a silicided gate on a substrate having active regions, comprising the steps of:
- forming suicide in the active regions and a portion of the gate, leaving a remaining portion of the gate unsilicided;
forming a shielding layer over the active regions and gate after said silicide forming step;
forming a coating layer over portions of the shielding layer over the active regions;
opening said shielding layer to expose said gate, wherein said coating layer protects said portions of said shielding layer over said active regions during said opening step;
depositing a metal layer over the exposed gate; and
annealing to cause the metal to react with the gate to silicidize at least a part of the remaining portion of the gate,wherein said coating layer comprises a polymer, andwherein the step of forming said coating layer comprises the step of depositing said polymer to a thickness less than the height of said gate, wherein said shielding layer is exposed over a top surface of said gate.
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Abstract
A method of forming a silicided gate on a substrate having active regions is provided. The method comprises forming silicide in the active regions and a portion of the gate, leaving a remaining portion of the gate unsilicided; forming a shielding layer over the active regions and gate after the forming step; forming a coating layer over portions of the shielding layer over the active regions; opening the shielding layer to expose the gate, wherein the coating layer protects the portions of the shielding layer over the active regions during the opening step; depositing a metal layer over the exposed gate; and annealing to cause the metal to react with the gate to silicidize at least a part of the remaining portion of the gate.
55 Citations
18 Claims
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1. A method of forming a silicided gate on a substrate having active regions, comprising the steps of:
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forming suicide in the active regions and a portion of the gate, leaving a remaining portion of the gate unsilicided; forming a shielding layer over the active regions and gate after said silicide forming step; forming a coating layer over portions of the shielding layer over the active regions; opening said shielding layer to expose said gate, wherein said coating layer protects said portions of said shielding layer over said active regions during said opening step; depositing a metal layer over the exposed gate; and annealing to cause the metal to react with the gate to silicidize at least a part of the remaining portion of the gate, wherein said coating layer comprises a polymer, and wherein the step of forming said coating layer comprises the step of depositing said polymer to a thickness less than the height of said gate, wherein said shielding layer is exposed over a top surface of said gate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming a fully silicided gate on a substrate having active regions, comprising the steps of:
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forming silicide in the active regions and a portion of the gate, leaving a remaining portion of the gate unsilicided; forming a shielding layer over the active regions and gate after said silicide forming step; forming a polymer coating over the shielding layer over the active regions to a thickness less than the height of said gate; etching said shielding layer to expose a top surface of said gate, wherein said polymer coating protects portions of said shielding layer over said active regions from said etching step; after said etching step, removing said polymer coating over said active regions, depositing a metal layer over the top surface of said gate; and annealing to cause the metal to react with the gate to silicidize the remaining portion of the gate, wherein said shielding layer prevents said metal from reacting with the active regions during the annealing, whereby a fully silicided gate is formed. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A method of forming a silicided gate on a substrate having active regions, comprising the steps of:
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forming silicide in the active regions and a portion of the gate, leaving a remaining portion of the gate unsilicided; forming a shielding layer over the active regions and gate after said silicide forming step; forming a coating layer over portions of the shielding layer over the active regions; opening said shielding layer to expose said gate, wherein said coating layer protects said portions of said shielding layer over said active regions during said opening step; depositing a metal layer over the exposed gate; and annealing to cause the metal to react with the gate to silicidize at least a part of the remaining portion of the gate, wherein said coating layer comprises a polymer, and wherein the step of forming said coating layer comprises; depositing said polymer over said substrate to a thickness sufficient to cover said gate; and etching said deposited polymer to a thickness less than the height of said gate, wherein said shielding layer is exposed over a top surface of the gate electrode.
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18. A method of forming a silicided gate on a substrate having active regions, comprising the steps of:
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forming silicide in the active regions and a portion of the gate, leaving a remaining portion of the gate unsilicided; forming a shielding layer over the active regions and gate after said silicide forming step; forming a coating layer over portions of the shielding layer over the active regions; opening said shielding layer to expose said gate, wherein said coating layer protects said portions of said shielding layer over said active regions during said opening step; depositing a metal layer over the exposed gate; and annealing to cause the metal to react with the gate to silicidize at least a part of the remaining portion of the gate, wherein said coating layer comprises a polymer, and wherein said polymer comprises a photoresist and the step of forming said coating layer comprises; depositing said photoresist and developing said photoresist to a thickness less than the height of said gate, wherein said shielding layer is exposed over a top surface of the gate electrode.
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Specification