Process for producing integrated circuits including reduction using gaseous organic compounds
First Claim
1. A process for producing an integrated circuit comprising providing a substrate comprising a via through an insulating layer and at least partially reducing a metal oxide layer on the via bottom to elemental metal with a gaseous organic compound comprising one or more functional groups selected from the group consisting of alcohol (—
- OH), aldehyde (—
CHO) and carboxylic acid (—
COOH).
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Abstract
This invention concerns a process for producing integrated circuits containing at least one layer of elemental metal which during the processing of the integrated circuit is at least partly in the form of metal oxide, and the use of an organic compound containing certain functional groups for the reduction of a metal oxide layer formed during the production of an integrated circuit. According to the present process the metal oxide layer is at least partly reduced to elemental metal with a reducing agent selected from organic compounds containing one or more of the following functional groups: alcohol (—OH), aldehyde (—CHO), and carboxylic acid (—COOH).
119 Citations
32 Claims
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1. A process for producing an integrated circuit comprising providing a substrate comprising a via through an insulating layer and at least partially reducing a metal oxide layer on the via bottom to elemental metal with a gaseous organic compound comprising one or more functional groups selected from the group consisting of alcohol (—
- OH), aldehyde (—
CHO) and carboxylic acid (—
COOH). - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
- OH), aldehyde (—
- 24. A method for reducing copper oxide on the bottom of a via on a substrate prior to deposition of a diffusion barrier comprising exposing the copper oxide to one or more gaseous organic compounds selected from the group consisting of alcohols, aldehydes and carboxylic acids.
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28. A method for forming an integrated circuit on a substrate comprising at least one metal layer, the method comprising:
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depositing a first dielectric layer on the substrate; forming a via through the first dielectric layer whereby the metal layer is at least partially exposed and oxidized at the bottom of the via; and reducing the oxidized metal at the bottom of the via with an organic reducing agent selected from the group consisting of alcohols, aldehydes and carboxylic acids. - View Dependent Claims (29, 30)
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31. A process for producing an integrated circuit comprising at least partially reducing a metal oxide layer on a via bottom to elemental metal with a gaseous organic compound comprising at least one alcohol (—
- OH) group and selected from the group consisting of primary alcohols, secondary alcohols, tertiary alcohols, polyhydroxy alcohols, cyclic alcohols, aromatic alcohols, halogenated alcohols and other derivatives of alcohols.
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32. A process for producing an integrated circuit comprising at least partially reducing a metal oxide layer on a via bottom to elemental metal with a gaseous organic compound selected from the group consisting of:
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(a) organic compounds comprising at least one aldehyde (—
CHO) group and selected from the group consisting of;(i) compounds having the general formula (V)
R3—
CHO
(V)
wherein R3 is hydrogen or a linear or branched C1–
C20 alkyl or alkenyl group,(ii) compounds having the general formula (VI)
OHC—
R4—
CHO
(VI)wherein R4 is zero or a linear or branched C1–
C20 saturated or unsaturated hydrocarbon,(iii) halogenated aldehydes, and (iv) other derivatives of aldehydes; and (b) organic compounds comprising at least one carboxylic acid (—
COOH) group and selected from the group consisting of;(i) compounds having the general formula (VII)
R5COOH
(VII)
wherein R5 is hydrogen or a linear or branched C1–
C20 alkyl or alkenyl group,(ii) polycarboxylic acids, (iii) halogenated carboxylic acids, and (iv) other derivatives of carboxylic acids.
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Specification