×

Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups

  • US 7,241,704 B1
  • Filed: 08/27/2004
  • Issued: 07/10/2007
  • Est. Priority Date: 03/31/2003
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method of preparing a porous low-k dielectric material on a substrate, the method comprising:

  • forming a precursor film on the substrate, the precursor film comprising a porogen and a structure former, wherein the structure former has one or more carbon-carbon double or triple bonds and the porogen has at least one bulky organic functional group and wherein the porogen precursor is a polyfunctional cyclic non-aromatic compound; and

    treating the precursor film to facilitate removing the porogen from the precursor film and thereby creating voids within the dielectric material to form the porous low-k dielectric material.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×