Semiconductor light emitting apparatus and its manufacturing method

• US 7,242,031 B2
• Filed: 03/01/2005
• Issued: 07/10/2007
• Est. Priority Date: 03/02/2004
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Sakai, Takayuki
• Primary Examiner(s): HO, TU TU V
• Application Number:
  US11/067,760
• Publication Number:
  US 20050230698A1
• Time in Patent Office: 861 Days
• Field of Search: 257/98
• US Class Current: 257/98
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2924/01012 Magnesium [Mg]
• CPC Class Codes: H01L 2924/12041 LED
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A semiconductor light emitting apparatus comprises: a semiconductor light emitting device; resin that seals the semiconductor light emitting device; and antireflective coating provided on a surface of the resin. The antireflective coating is made of material having an intermediate refractive index between the refractive index of the resin and the refractive index of air.

Claims

1. A semiconductor light emitting apparatus comprising:

a semiconductor light emitting device;

a resin that seals the semiconductor light emitting device; and

antireflective coating provided on a surface of the resin, the antireflective coating being made of material having an intermediate refractive index between the refractive index of the resin and the refractive index of air,

wherein the antireflective coating is provided with a film thickness that generally conforms to an equation;

T=(m−

½

)λ

/2n

where λ

is a wavelength of light, m is an integer, n is the refractive index of the antireflective coating, and T is the film thickness.

2. The semiconductor light emitting apparatus as claimed in claim 1, wherein the antireflective coating has a thickness in a range of plus or minus 30 nanometers from the film thickness that conforms to the equation.

3. The semiconductor light emitting apparatus as claimed in claim 1, wherein the refractive index n of the antireflective coating generally conforms to an equation:

n=√

{square root over (n₀n₂)}

where n₀ is the refractive index of the air, and n₂ is the refractive index of the resin.

4. The semiconductor light emitting apparatus as claimed in claim 1, wherein the antireflective coating is made from a material selected from a group consisting of polymers, oxides and fluorides.

5. The semiconductor light emitting apparatus as claimed in claim 1, wherein the resin has a light extraction surface that controls a distribution of a light emitted from the semiconductor light emitting device.

6. The semiconductor light emitting apparatus as claimed in claim 1, further comprising a fluorescent material that absorbs a light emitted from the semiconductor light emitting device and converts its wavelength.