Semiconductor device
First Claim
Patent Images
1. A semiconductor device, comprising:
- a drain electrode;
a source electrode;
a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more compounds of the formula AxBxCxOx, wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, each C is selected from the group Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero number, and each of A, B, and C are different from each other and from O; and
a gate dielectric positioned between a gate electrode and the channel.
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Abstract
One exemplary embodiment includes a semi-conductor device. The semi-conductor device can include a channel including that includes one or more compounds of the formula AxBxCxOx wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, each C is selected from the group Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero integer, and each of A, B, and C are different.
81 Citations
46 Claims
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1. A semiconductor device, comprising:
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a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more compounds of the formula AxBxCxOx, wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, each C is selected from the group Ge, Sn, Pb, each O is atomic oxygen, each x is independently a non-zero number, and each of A, B, and C are different from each other and from O; and a gate dielectric positioned between a gate electrode and the channel. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device, comprising:
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a drain electrode; a source electrode; means for controlling current flow electrically coupled to the drain electrode and the source electrode, wherein the means for controlling current flow includes one or more compounds of the formula AxBxCxOx, wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, and each C is selected from the group of Ge, Sn, Pb; and a gate electrode separated from the channel by a gate dielectric. - View Dependent Claims (13, 14)
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15. A semiconductor device formed by the steps, comprising:
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providing a drain electrode; providing a source electrode; providing a precursor oxide composition including one or more precursor compounds that each include Ax, one or more precursor compounds that each include Bx, and one or more precursor compounds that each include Cx, wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, each C is selected from the group Ge, Sn, Pb, each x is independently a non-zero number, and wherein each of A, B, and C are different from each other and from O; depositing a channel including the precursor composition to form a multicomponent oxide including AxBxCxOx from the precursor composition to electrically couple the drain electrode and the source electrode; providing a gate electrode; and providing a gate dielectric positioned between the gate electrode and the channel. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23)
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24. A display device, comprising:
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a plurality of pixel devices configured to operate collectively to display images, where each of the pixel devices includes a semiconductor device configured to control light emitted by the pixel device, the semiconductor device including; a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more compounds of the formula AxBxCxOx, wherein each A is selected from the group of Zn, Cd, each B is selected from the group of Ga, In, each C is selected from the group Ge, Sn, Pb, each O is atomic oxygen;
each x is independently a non-zero integer, and wherein each of A, B, and C are different;a gate electrode; and a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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36. A semiconductor device, comprising:
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a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes one or more of a metal oxide including zinc-gallium-germanium, zinc-gallium-tin, zinc-gallium-lead, cadmium-gallium-germanium, cadmium-gallium-tin, cadmium-gallium-lead, zinc-indium-germanium, zinc-indium-tin, zinc-indium-lead, cadmium-indium-germanium, cadmium-indium-tin, cadmium-indium-lead; and a gate dielectric positioned between the gate electrode and the channel. - View Dependent Claims (37, 38, 39, 40, 41, 42, 43, 44, 45, 46)
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Specification