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Reduced capacitance resistors

  • US 7,242,074 B2
  • Filed: 12/06/2004
  • Issued: 07/10/2007
  • Est. Priority Date: 12/06/2004
  • Status: Active Grant
First Claim
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1. A resistor having reduced parasitic capacitance comprising:

  • (a) a chosen dielectric material having a first side and a second side;

    (b) a first substrate disposed on the first side of said dielectric material and having a surface thereof implanted to a chosen thickness with an effective amount of at least one first dopant, forming thereby a resistive layer having an inter-layer dielectric parasitic capacitance; and

    (c) a reverse-biased diode comprising a p-implanted layer formed on an n-well which is formed in a p-type substrate, said p-implanted layer disposed in contact with the second side of said dielectric material, said reversed-biased diode having a capacitance and being series coupled to the inter-layer dielectric parasitic capacitance of said resistive layer.

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