Drive circuit for voltage driven type semiconductor element
First Claim
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1. A drive circuit for a voltage driven type semiconductor element, comprising:
- an electrical charge discharge unit that discharges electrical charge from a gate terminal of a voltage driven type semiconductor element when the voltage driven type semiconductor element is turned OFF; and
an electrical current detection unit that detects a collector electrical current of the voltage driven type semiconductor element; and
an electrical discharge control unit that detects a time variation of a collector voltage of the voltage driven type semiconductor element, and controls electric discharge by the electrical charge discharge unit according to the time variation of the collector voltage which has been detected and the electrical current value which has been detected by the electrical current detection unit.
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Abstract
A drive circuit for a voltage driven type semiconductor element, includes: an electrical charge discharge unit that discharges electrical charge from a gate terminal of a voltage driven type semiconductor element when the voltage driven type semiconductor element is turned OFF; and an electrical discharge control unit that detects a time variation of a collector voltage of the voltage driven type semiconductor element, and controls electric discharge by the electrical charge discharge unit according to the time variation of the collector voltage which has been detected.
26 Citations
20 Claims
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1. A drive circuit for a voltage driven type semiconductor element, comprising:
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an electrical charge discharge unit that discharges electrical charge from a gate terminal of a voltage driven type semiconductor element when the voltage driven type semiconductor element is turned OFF; and an electrical current detection unit that detects a collector electrical current of the voltage driven type semiconductor element; and an electrical discharge control unit that detects a time variation of a collector voltage of the voltage driven type semiconductor element, and controls electric discharge by the electrical charge discharge unit according to the time variation of the collector voltage which has been detected and the electrical current value which has been detected by the electrical current detection unit. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A drive circuit for a voltage driven type semiconductor element, comprising:
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an electrical charge discharge means for discharging electrical charge from a gate terminal of a voltage driven type semiconductor element when the voltage driven type semiconductor element is turned OFF; and an electrical current detection means for detecting a collector electrical current of the voltage driven type semiconductor element; and an electrical discharge control means for detecting a time variation of a collector voltage of the voltage driven type semiconductor element, and for controlling electric discharge by the electrical charge discharge means according to the time variation of the collector voltage which has been detected and the electrical current value which has been detected by the electrical current detection means.
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19. A drive circuit for a voltage driven type semiconductor element, comprising:
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an electrical charge discharge unit that discharges electrical charge from a gate terminal of a voltage driven type semiconductor element when the voltage driven type semiconductor element is turned OFF; an electrical discharge control unit that detects a time variation of a collector voltage of the voltage driven type semiconductor element, and controls electric discharge by the electrical charge discharge unit according to the time variation of the collector voltage which has been detected; an electrical charge supply unit that supplies electrical charge to a gate terminal of the voltage driven type semiconductor element when the voltage driven type semiconductor element is turned ON; the electrical charge supply unit comprising an NPN transistor; the electrical charge discharge unit comprising a PNP transistor; a signal output circuit which has a push-pull structure, and which outputs a drive signal to a base terminal of the NPN transistor; a capacitance element, a first resistor element, and a first switching element which are connected between a collector terminal and an emitter terminal of the voltage driven type semiconductor element, and are connected in series; and a second resistor element of which one terminal is connected to a connection point of the capacitance element and the first resistor element, and the other terminal is connected to an output terminal of the signal output circuit, wherein; the connection point of the capacitance element, the first resistor element, and the second resistance element is connected to a base terminal of the PNP transistor; and a time constant due to the capacitance element and the first resistor element, and a time constant due to the capacitance element and the second resistor element, are changed over between according to a switching state of the first switching element.
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20. A drive circuit for a voltage driven type semiconductor element, comprising:
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an electrical charge discharge unit that discharges electrical charge from a gate terminal of a voltage driven type semiconductor element when the voltage driven type semiconductor element is turned OFF; an electrical discharge control unit that detects a time variation of a collector voltage of the voltage driven type semiconductor element, and controls electric discharge by the electrical charge discharge unit according to the time variation of the collector voltage which has been detected; and
whereinthe electrical discharge control unit comprises a differentiation circuit which detects the time variation of the collector voltage and feeds back the detected time variation to the electrical charge discharge unit.
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Specification