Group III nitride compound semiconductor light-emitting device and method for producing the same

• US 7,244,957 B2
• Filed: 02/24/2005
• Issued: 07/17/2007
• Est. Priority Date: 02/26/2004
• Status: Active Grant

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Inventors: Nakajo, Naoki, Kamiya, Masao, Taki, Tetsuya
• Primary Examiner(s): Picardat; Kevin M.
• Application Number:
  US11/063,747
• Publication Number:
  US 20050277218A1
• Time in Patent Office: 873 Days
• Field of Search: 438/29, 438/31, 438/32, 438/37, 438/46, 438/47, 257/12, 257/13, 257/14, 257/79, 257/85, 257/94, 257/95, 257/98
• US Class Current: 257/13
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/42 Transparent materials

Abstract

In a Group III nitride compound semiconductor light-emitting device which outputs lights from a semiconductor plane, about 1.5 μm in height of a Group III nitride compound semiconductor projection part 150, which is made of Mg-doped p-type GaN having Mg doping concentration of 8×10¹⁹/cm³ and is formed through selective growth, is formed on a p-type contact layer (second p-layer) 108. And a light-transparency electrode 110 is formed thereon through metal deposition. The Group III nitride compound semiconductor projection part 150 makes a rugged surface for outputting lights and actual critical angle is widened, which enables to improve luminous outputting efficiency. And because etching is not employed to form the ruggedness, driving voltage does not increase.

Claims

1. A Group III nitride compound semiconductor light-emitting device comprising:

a substrate;

a plurality of Group III nitride compound semiconductor layers comprising a first layer as a top flat surface layer deposited on said substrate through epitaxial growth,

a plurality of convex parts which are separated from each other and comprise Group III nitride compound semiconductor formed on said first layer through selective growth from said first layer; and

a light-transparency electrode formed on an exposed portion of said first layer except for said plurality of convex parts.

2. A Group III nitride compound semiconductor light-emitting device according to claim 1, wherein said plurality of convex parts comprise undoped Group III nitride compound semiconductor and said first layer comprises Mg doped p-type Group III nitride compound semiconductor.

3. A Group III nitride compound semiconductor light-emitting device according to claim 1, wherein both said first layer and said plurality of convex parts comprise a p-type Group III nitride compound semiconductor.

4. A Group III nitride compound semiconductor light-emitting device according to claim 1, wherein said light-transparency electrode is further formed on the surface of said plurality of convex parts.

5. A Group III nitride compound semiconductor according to claim 1, wherein said light-transparency electrode comprises indium tin oxide (ITO).

6. A Group III nitride compound semiconductor light-emitting device according to claim 4, wherein said light-transparency electrode comprises indium tin oxide (ITO).

7. A Group III nitride compound semiconductor light-emitting device according to claim 3, wherein said light-transparency electrode is further formed on the surface of said plurality of convex parts.

8. A Group III nitride compound semiconductor light-emitting device according to claim 1, further comprising:

a protection film formed on an entire surface of said plurality of convex parts and said light-transparency electrode.

9. A Group III nitride compound semiconductor light-emitting device according to claim 3, further comprising:

a protection film formed on an entire surface of said light-transparency electrode.

10. A method for producing a Group III nitride compound semiconductor light-omitting device, comprising:

forming an n-type Group III nitride compound semiconductor layer, an emission layer, and a p-type Group III nitride compound layer on a substrate;

forming a mask on an uppermost layer of said Group III nitride compound semiconductor layer on which a Group III nitride compound semiconductor does not grow;

removing a portion of the mask;

selectively growing a Group III nitride compound semiconductor on the exposed portion of said uppermost layer where said mask is partially removed so as to form a plurality of convex parts for outputting lights on the surface of said uppermost layer;

removing a remaining portion of said mask; and

forming a light-transparency electrode on an exposed portion of said first layer except for said plurality of convex parts.

11. A method for producing a Group III nitride compound semiconductor light-emitting device according to claim 10, wherein a p-type impurity is doped in said selectively growing said Group III nitride compound semiconductor.

12. A method for producing a Group III nitride compound semiconductor light-emitting device according to claim 10, wherein growth temperature in said selectively growing is 1100°

C. or less.

13. A method for producing a Group III nitride compound semiconductor light-emitting device according to claim 10, wherein said mask is fanned by using at least one of silicon oxide (SiO₂) and silicon nitride (Si₃N₄).

14. A method for producing a Group III nitride compound semiconductor light-emitting device according to claim 10, further comprising:

forming said light-transparency electrode on said plurality of convex parts.

15. A method for producing a Group III nitride compound semiconductor light-emitting device according to claim 10, further comprising:

forming a protection film on an entire surface of said plurality of convex parts and said light-transparency electrode.

16. A method for producing a Group III nitride compound semiconductor light-emitting device according to claim 14, further comprising:

forming a protection film on an entire surface of said light-transparency electrode.

17. A method for producing a Group III nitride compound semiconductor light-emitting device according to claim 10, wherein said plurality of convex parts comprises undoped Group III nitride compound semiconductor and said uppermost layer comprises Mg doped p-type Group III nitride compound semiconductor.

18. A method for producing a Group III nitride compound semiconductor light-emitting device, comprising:

forming an n-type Group III nitride compound semiconductor layer, an emission layer, and a p-type Group III nitride compound layer on a substrate;

forming a light-transparency electrode comprising indium tin oxide (ITO) on an uppermost layer of said Group III nitride compound semiconductor layer on which a Group III nitride compound semiconductor does not grow;

removing a portion of said light-transparency electrode; and

selectively growing a Group III nitride compound semiconductor on the exposed portion of said uppermost layer where said light-transparency electrode is partially removed so as to form a plurality of convex parts for outputting lights on the surface of said uppermost layer.

19. A method for producing a Group III nitride compound semiconductor light-emitting device according to claim 18, further comprising:

forming a protection film on an entire surface of said plurality of convex parts and said light-transparency electrode.

20. A method for producing a Group III nitride compound semiconductor light-emitting device according to claim 18, wherein said plurality of convex parts comprises undoped Group III nitride compound semiconductor and said uppermost layer comprises Mg doped p-type Group III nitride compound semiconductor.