Method for manufacturing display device
First Claim
1. A method for manufacturing a display device, comprising:
- forming an amorphous semiconductor layer over an insulated surface;
adding a metal element to the amorphous semiconductor layer and crystallizing the amorphous semiconductor layer by heating to form a crystalline semiconductor layer;
forming a semiconductor layer having one conductivity type in contact with the crystalline semiconductor layer;
heating the crystalline semiconductor layer and the semiconductor layer having one conductivity type;
patterning the semiconductor layer having one conductivity type to form a source region and a drain region;
discharging a composition containing a conductive material on the source region and the drain region to selectively form a source electrode layer and a drain electrode layer;
forming a gate insulating layer over the crystalline semiconductor layer, the source electrode layer and the drain electrode layer; and
forming a gate electrode layer over the gate insulating layer.
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Accused Products
Abstract
The present invention provides a method for manufacturing a display device having a TFT that can be operated at high speed while using a small number of photomasks and improving the utilization efficiency of materials, where the threshold value is difficult to be varied. In the invention, a catalytic element is applied to an amorphous semiconductor film and the amorphous semiconductor film is heated to form a crystalline semiconductor film. After removing the catalytic element from the crystalline semiconductor film, a top-gate type thin film transistor with a planar structure is manufactured. Moreover, by using the droplet discharging method where an element of a display device is formed selectively, the process can be simplified, and loss of materials can be reduced.
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Citations
24 Claims
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1. A method for manufacturing a display device, comprising:
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forming an amorphous semiconductor layer over an insulated surface; adding a metal element to the amorphous semiconductor layer and crystallizing the amorphous semiconductor layer by heating to form a crystalline semiconductor layer; forming a semiconductor layer having one conductivity type in contact with the crystalline semiconductor layer; heating the crystalline semiconductor layer and the semiconductor layer having one conductivity type; patterning the semiconductor layer having one conductivity type to form a source region and a drain region; discharging a composition containing a conductive material on the source region and the drain region to selectively form a source electrode layer and a drain electrode layer; forming a gate insulating layer over the crystalline semiconductor layer, the source electrode layer and the drain electrode layer; and forming a gate electrode layer over the gate insulating layer. - View Dependent Claims (2, 3, 4, 5)
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6. A method for manufacturing a display device, comprising:
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forming an amorphous semiconductor layer over an insulated surface; adding a metal element to the amorphous semiconductor layer and crystallizing the amorphous semiconductor layer by heating to form a crystalline semiconductor layer; forming a channel protection layer over the crystalline semiconductor layer; forming a semiconductor layer having one conductivity type over the crystalline semiconductor layer and the channel protection layer; heating the crystalline semiconductor layer and the semiconductor layer having one conductivity type; patterning the semiconductor layer having one conductivity type to form a source region and a drain region; discharging a composition containing a conductive material on the source region and the drain region to selectively form a source electrode layer and a drain electrode layer; forming a gate insulating layer over the crystalline semiconductor layer, the channel protection layer, the source electrode layer and the drain electrode layer; and forming a gate electrode layer over the gate insulating layer. - View Dependent Claims (7, 8, 9, 10)
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11. A method for manufacturing a display device, comprising:
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forming a first semiconductor layer over an insulated surface; adding a metal element to the first semiconductor layer and heating the first semiconductor layer; forming a second semiconductor layer including a first impurity element in contact with the first semiconductor layer; heating the first semiconductor layer and the second semiconductor layer including the first impurity element; removing the second semiconductor layer including the first impurity element; adding a second impurity element to the first semiconductor layer to form a source region and a drain region; discharging a composition containing a conductive material on the source region and the drain region to selectively form a source electrode layer and a drain electrode layer; forming a gate insulating layer over the crystalline semiconductor layer, the source electrode layer and the drain electrode layer; and forming a gate electrode layer over the gate insulating layer. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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18. A method for manufacturing a display device, comprising:
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forming a first semiconductor layer over an insulated surface; adding a metal element to the first semiconductor layer and heating the first semiconductor layer; forming a second semiconductor layer including a first impurity element in contact with the first semiconductor layer; heating the first semiconductor layer and the second semiconductor layer including the first impurity element; removing the second semiconductor layer including the first impurity element; forming a channel protection layer over a channel formation region of the first semiconductor layer; adding a second impurity element to the first semiconductor layer to form a source region and a drain region; discharging a composition containing a conductive material on the source region and the drain region to selectively form a source electrode layer and a drain electrode layer; forming a gate insulating layer over the crystalline semiconductor layer, the channel protection layer, the source electrode layer and the drain electrode layer; and forming a gate electrode layer over the gate insulating layer. - View Dependent Claims (19, 20, 21, 22, 23, 24)
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Specification