Segmented channel MOS transistor
First Claim
1. A transistor comprising:
- a source;
a drain;
a channel region between the source and the drain; and
a gate over the channel region,wherein the channel region comprises a plurality of semiconductor ridges connecting the source and the drain,wherein the plurality of semiconductor ridges are separated in part by insulation material, andwherein the plurality of semiconductor ridges are formed on an elevated base region on a substrate.
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Accused Products
Abstract
By forming MOSFETs on a substrate having pre-existing ridges of semiconductor material (i.e., a “corrugated substrate”), the resolution limitations associated with conventional semiconductor manufacturing processes can be overcome, and high-performance, low-power transistors can be reliably and repeatably produced. Forming a corrugated substrate prior to actual device formation allows the ridges on the corrugated substrate to be created using high precision techniques that are not ordinarily suitable for device production. MOSFETs that subsequently incorporate the high-precision ridges into their channel regions will typically exhibit much more precise and less variable performance than similar MOSFETs formed using optical lithography-based techniques that cannot provide the same degree of patterning accuracy. Additional performance enhancement techniques such as pulse-shaped doping and “wrapped” gates can be used in conjunction with the segmented channel regions to further enhance device performance.
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Citations
30 Claims
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1. A transistor comprising:
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a source; a drain; a channel region between the source and the drain; and a gate over the channel region, wherein the channel region comprises a plurality of semiconductor ridges connecting the source and the drain, wherein the plurality of semiconductor ridges are separated in part by insulation material, and wherein the plurality of semiconductor ridges are formed on an elevated base region on a substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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18. A transistor comprising:
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a source; a drain; a channel region between the source and the drain; and a gate over the channel region, wherein the channel region comprises a plurality of semiconductor ridges connecting the source and the drain, the plurality of semiconductor ridges being separated in part by insulation material, and wherein each of the plurality of semiconductor ridges includes a sub-surface heavily doped channel region. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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Specification