Method for forming pattern using a photomask

• US 7,250,248 B2
• Filed: 04/13/2006
• Issued: 07/31/2007
• Est. Priority Date: 04/30/2002
• Status: Expired due to Fees

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Misaka, Akio
• Primary Examiner(s): Young; Christopher G.
• Application Number:
  US11/402,947
• Publication Number:
  US 20060183035A1
• Time in Patent Office: 474 Days
• Field of Search: 430/5, 430/311, 430/322, 430/396
• US Class Current: 430/311
• CPC Class Codes: G03F 1/29 Rim PSM or outrigger PSM; Preparation thereof
• CPC Class Codes: G03F 1/32 Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion,; Preparation thereof

Abstract

A photomask has a semi-light-shielding portion having a light-shielding property and a light-transmitting portion surrounded by the semi-light-shielding portion, and a peripheral portion positioned in the periphery of the light-transmitting portion. The semi-light-shielding portion and the light-transmitting portion transmit exposure light in the same phase, whereas the peripheral portion transmits exposure light in a phase opposite to that of the light-transmitting portion.

Claims

1. A method for forming a pattern that uses a photomask, comprising the steps of:

a) forming a resist film on a substrate;

b) irradiating the resist film with the exposure light via the photomask; and

c) developing the resist film irradiated with the exposure light so as to pattern the resist film,

wherein the photomask comprises on a transparent substrate;

a semi-light-shielding portion having a light-shielding property with respect to the exposure light;

a light-transmitting portion surrounded by the semi-light-shielding portion and having a light-transmitting property with respect to the exposure light; and

a peripheral portion surrounded by the semi-light-shielding portion and positioned in a periphery of the light-transmitting portion,

the semi-light-shielding portion and the light-transmitting portion transmit the exposure light in a same phase,

the peripheral portion transmits the exposure light in a phase opposite to that of the semi-light-shielding portion and the light-transmitting portion, and is spaced apart from the light-transmitting portion by a predetermined distance,

a surface of the transparent substrate in a formation region for the light-transmitting portion is exposed,

a first phase shift film that transmits the exposure light in a phase opposite to that of the light-transmitting portion is formed on the transparent substrate in a formation region for the peripheral portion,

the first phase shift film and a second phase shift film that transmits the exposure light in a phase opposite to that of the light-transmitting portion are laminated sequentially on the transparent substrate in a formation region for the semi-light-shielding portion, and

a multilayered structure of the first phase shift film and the second phase shift film has a transmittance that allows the exposure light to be transmitted partially and transmits the exposure light in a same phase as that of the light-transmitting portion.

2. The method for forming the pattern according to claim 1

wherein the first phase shift film of the photomask has a first transmittance adjusting film and a first phase adjusting film formed on the first transmittance adjusting film,

the first transmittance adjusting film of the photomask transmits the exposure light in a same phase as that of the light-transmitting portion and has a relatively low transmittance with respect to the exposure light, and

the first phase adjusting film transmits the exposure light in a phase opposite to that of the light-transmitting portion and has a relatively high transmittance with respect to the exposure light.

3. The method for forming the pattern according to claim 1,

wherein the second phase shift film of the photomask has a second transmittance adjusting film and a second phase adjusting film formed on the second transmittance adjusting film,

the second transmittance adjusting film of the photomask transmits the exposure light in a same phase as that of the light-transmitting portion and has a relatively low transmittance with respect to the exposure light, and

the second phase adjusting film of the photomask transmits the exposure light in a phase opposite to that of the light-transmitting portion and has a relatively high transmittance with respect to the exposure light.

4. The method for forming the pattern according to claim 1,

wherein the first phase shift film of the photomask has a first phase adjusting film that transmits the exposure light in a phase opposite to that of the light-transmitting portion,

the second phase shift film of the photomask has a second phase adjusting film that is formed on the first phase adjusting film and transmits the exposure light in a phase opposite to that of the light-transmitting portion, and

a transmittance adjusting film having a lower transmittance than that of the phase adjusting films with respect to the exposure light is formed between the first phase adjusting film and the second phase adjusting film.

5. The method for forming the pattern according to claim 1,

wherein the peripheral portion of the photomask is composed of a ring-shaped region which is positioned in a periphery of the light-transmitting portion, and

a part of the semi-light-shielding portion, whcich is ring-shaped, is interposed between the peripheral portion and the light-transmitting portion.

6. The method for forming the pattern according to claim 1,

wherein the light-transmitting portion of the photomask has a polygonal shape,

the peripheral portion of the photomask is composed of a plurality of rectangular regions, each region being positioned so as to face each side of the light-transmitting portion, and

a part of the semi-light-shielding portion is interposed between the peripheral portion and the light-transmitting portion.

7. The method for forming a pattern according to claim 1,

wherein in the step of b), off-axis illumination is used to irradiate with the exposure light.

28. The method for forming a pattern according to claim 1,

wherein in the photomask, a transmittance of the semi-light-shielding portion with respect to the exposure light is 6% or more and 15% or less.

8. A method for forming a pattern that uses a photomask, comprising the steps of:

a) forming a resist film on a substrate;

b) irradiating the resist film with the exposure light via the photomask; and

c) developing the resist film irradiated with the exposure light so as to pattern the resist film,

wherein the photomask comprises on a transparent substrate;

a semi-light-shielding portion having a light-shielding property with respect to the exposure light;

a light-transmitting portion surrounded by the semi-light-shielding portion and having a light-transmitting property with respect to the exposure light; and

a peripheral portion surrounded by the semi-light-shielding portion and positioned in a periphery of the light-transmitting portion,

the semi-light-shielding portion and the light-transmitting portion transmit the exposure light in a same phase,

the peripheral portion transmits the exposure light in a phase opposite to that of the semi-light-shielding portion and the light-transmitting portion, and is spaced apart from the light-transmitting portion by a predetermined distance,

a surface of the transparent substrate in a formation region for the light-transmitting portion is exposed,

a semi-light-shielding film that has a transmittance allowing the exposure light to be transmitted partially and transmits the exposure light in a same phase as that of the light-transmitting portion is formed on the transparent substrate in the semi-light-shielding portion formation region, and

the semi-light-shielding film with a reduced thickness is formed on the transparent substrate in a formation region for the peripheral portion, the thickness being such an extent that the exposure light is transmitted in a phase opposite to that of the light-transmitting portion.

9. The method for forming a pattern according to claim 8,

wherein the semi-light-shielding film of the photomask has a transmittance adjusting film formed on the transparent substrate and a phase adjusting film formed on the transmittance adjusting film,

the transmittance adjusting film of the photomask transmits the exposure light in a same phase as that of the light-transmitting portion and has a relatively low transmittance with respect to the exposure light, and

the phase adjusting film of the photomask has a relatively high transmittance with respect to the exposure light,

the phase adjusting film of the photomask in a formation region for the semi-light-shielding portion has a thickness that transmits the exposure light in a same phase as that of the light-transmitting portion, and

the phase adjusting film of the photomask in a formation region for the peripheral portion has a thickness that transmits the exposure light in a phase opposite to that of the light-transmitting portion.

10. The method for forming a pattern according to claim 8,

wherein the semi-light-shielding film of the photomask has a phase adjusting film formed on the transparent substrate and a transmittance adjusting film formed only on the phase adjusting film in the semi-light-shielding portion formation region,

the transmittance adjusting film of the photomask transmits the exposure light in a same phase as that of the light-transmitting portion and has a relatively low transmittance with respect to the exposure light, and

the phase adjusting film of the photomask has a relatively high transmittance with respect to the exposure light,

the phase adjusting film of the photomask in a formation region for the semi-light-shielding portion has a thickness that transmits the exposure light in a same phase as that of the light-transmitting portion, and

the phase adjusting film of the photomask in a formation region for the peripheral portion has a thickness that transmits the exposure light in a phase opposite to that of the light-transmitting portion.

11. The method for forming a pattern according to claim 8,

wherein the peripheral portion of the photomask is composed of a ring-shaped region which is positioned in a periphery of the light-transmitting portion, and

a part of the semi-light-shielding portion of the photomask, which is ring-shaped, is interposed between the peripheral portion and the light-transmitting portion.

12. The method for forming a pattern according to claim 8,

wherein the light-transmitting portion of the photomask has a polygonal shape,

the peripheral portion of the photomask is composed of a plurality of rectangular regions, each region being positioned so as to face each side of the light-transmitting portion, and

a part of the semi-light-shielding portion is interposed between the peripheral portion and the light-transmitting portion.

13. The method for forming a pattern according to claim 8,

wherein in the step of b), off-axis illumination is used to irradiate with the exposure light.

29. The method for forming a pattern according to claim 8,

wherein in the photomask, a transmittance of the semi-light-shielding portion with respect to the exposure light is 6% or more and 15% or less.

14. A method for forming a pattern that uses a photomask, comprising the steps of:

a) forming a resist film on a substrate;

b) irradiating the resist film with the exposure light via the photomask; and

c) developing the resist film irradiated with the exposure light so as to pattern the resist film,

wherein the photomask comprises on a transparent substrate;

a semi-light-shielding portion having a light-shielding property with respect to the exposure light;

a light-transmitting portion surrounded by the semi-light-shielding portion and having a light-transmitting property with respect to the exposure light; and

a peripheral portion surrounded by the semi-light-shielding portion and positioned in a periphery of the light-transmitting portion,

the semi-light-shielding portion and the light-transmitting portion transmit the exposure light in a same phase,

the peripheral portion transmits the exposure light in a phase opposite to that of the semi-light-shielding portion and the light-transmitting portion,

a surface of the transparent substrate in a formation region for the light-transmitting portion is exposed,

a semi-light-shielding film that has a transmittance that allows the exposure light to be transmitted partially and transmits the exposure light in a same phase as that of the light-transmitting portion is formed on the transparent substrate in the semi-light-shielding portion, and

the transparent substrate in a formation region for the peripheral portion is dug down such that a thickness thereof is such an extent that the exposure light is transmitted in a phase opposite to that of the light-transmitting portion.

15. The method for forming a pattern according to claim 14,

wherein the semi-light-shielding film of the photomask has a transmittance adjusting film formed on the transparent substrate and a phase adjusting film formed on the transmittance adjusting film,

the transmittance adjusting film of the photomask has a relatively low transmittance with respect to the exposure light, and

the phase adjusting film of the photomask has a relatively high transmittance with respect to the exposure light.

16. The method for forming a pattern according to claim 14,

wherein the peripheral portion of the photomask is in contact with the light-transmitting portion.

17. The method for forming a pattern according to claim 16,

wherein the peripheral portion of the photomask is composed of a ring-shaped region which is in contact with a periphery of the light-transmitting portion.

18. The method for forming a pattern according to claim 16,

wherein the light-transmitting portion of the photomask has a polygonal shape, and

the peripheral portion of the photomask is composed of a plurality of rectangular regions, each region being in contact with each side of the light-transmitting portion.

19. The photomask according to claim 14,

wherein the peripheral portion of the photomask is spaced apart from the light-transmitting portion by a predetermined distance.

20. The method for forming a pattern according to claim 19,

wherein the peripheral portion of the photomask is composed of a ring-shaped region which is positioned in a periphery of the light-transmitting portion, and

a part of the semi-light-shielding portion, whcich is ring-shaped, is interposed between the peripheral portion and the light-transmitting portion.

21. The method for forming a pattern according to claim 19,

wherein the light-transmitting portion of the photomask has a polygonal shape,

the peripheral portion of the photomask is composed of a plurality of rectangular regions, each region being positioned so as to face each side of the light-transmitting portion, and

a part of the semi-light-shielding portion is interposed between the peripheral portion and the light-transmitting portion.

22. The method for forming a pattern according to claim 14,

wherein in the step of b), off-axis illumination is used to irradiate with the exposure light.

30. The method for forming a pattern according to claim 14,

wherein in the photomask, a transmittance of the semi-light-shielding portion with respect to the exposure light is 6% or more and 15% or less.

23. A method for forming a pattern that uses a photomask, comprising the steps of:

a) forming a resist film on a substrate;

b) irradiating the resist film with the exposure light via the photomask; and

c) developing the resist film irradiated with the exposure light so as to pattern the resist film,

wherein the photomask comprises on a transparent substrate;

a semi-light-shielding portion having a light-shielding property with respect to the exposure light;

a light-transmitting portion surrounded by the semi-light-shielding portion and having a light-transmitting property with respect to the exposure light; and

a peripheral portion surrounded by the semi-light-shielding portion and positioned in a periphery of the light-transmitting portion,

the light-transmitting portion has a polygonal shape,

the peripheral portion is composed of a plurality of rectangular regions, each region being positioned so as to face each side of the light-transmitting portion,

the semi-light-shielding portion and the light-transmitting portion transmit the exposure light in a same phase,

the peripheral portion transmits the exposure light in a phase opposite to that of the semi-light-shielding portion and the light-transmitting portion,

a surface of the transparent substrate in a formation region for the light-transmitting portion is exposed,

a first phase shift film that transmits the exposure light in a phase opposite to that of the light-transmitting portion is formed on the transparent substrate in a formation region for the peripheral portion,

the first phase shift film and a second phase shift film that transmits the exposure light in a phase opposite to that of the light-transmitting portion are laminated sequentially on the transparent substrate in a formation region for the semi-light-shielding portion, and

a multilayered structure of the first phase shift film and the second phase shift film has a transmittance that allows the exposure light to be transmitted partially and transmits the exposure light in a same phase as that of the light-transmitting portion.

24. The method for forming a pattern according to claim 23,

wherein the first phase shift film of the photomask has a first transmittance adjusting film and a first phase adjusting film formed on the first transmittance adjusting film,

the first transmittance adjusting film of the photomask transmits the exposure light in a same phase as that of the light-transmitting portion and has a relatively low transmittance with respect to the exposure light, and

the first phase adjusting film of the photomask transmits the exposure light in a phase opposite to that of the light-transmitting portion and has a relatively high transmittance with respect to the exposure light.

25. The method for forming the pattern photomask according to claim 23,

wherein the second phase shift film of the photomask has a second transmittance adjusting film and a second phase adjusting film formed on the second transmittance adjusting film,

the second transmittance adjusting film of the photomask transmits the exposure light in a same phase as that of the light-transmitting portion and has a relatively low transmittance with respect to the exposure light, and

the second phase adjusting film of the photomask transmits the exposure light in a phase opposite to that of the light-transmitting portion and has a relatively high transmittance with respect to the exposure light.

26. The method for forming the pattern photomask according to claim 23,

wherein the peripheral portion of the photomask is in contact with the light-transmitting portion.

27. The method for forming a pattern according to claim 23,

wherein in the step of b), off-axis illumination is used to irradiate with the exposure light.

31. The method for forming a pattern according to claim 23,

wherein in the photomask, a transmittance of the semi-light-shielding portion with respect to the exposure light is 6% or more and 15% or less.