Method of forming metal oxide using an atomic layer deposition process
First Claim
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1. A method of forming a metal oxide comprising:
- introducing an organic metal compound represented by the following chemical formula into a chamber to chemisorb the organic metal compound onto a substrate,
M[L1]x[L2]ywherein, M represents a metal, L1 and L2 respectively represent a first and second ligands, the first and second ligands independently include at least one ligand selected from the group consisting of a halide ligand, a diketonate ligand, an alkoxide ligand, an amino ligand, an alkoxyamine ligand, an amidinate ligand, and a multidentate ligand including at least two electron pair donors, L1 and L2 are substantially different from each other, and x and y are independently integers such that a value of (x+y) is an integer ranging from 3 to 5;
removing a non-chemisorbed organic metal compound from the chamber; and
introducing an oxygen-containing compound into the chamber to form a metal oxide, the metal oxide being formed by reacting an oxygen of the oxygen-containing compound with the metal, and to separate the first and second ligands from the metal.
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Abstract
In a method of forming a metal oxide, an organic metal compound represented by the following chemical formula is introduced into a chamber to chemisorb the organic metal compound onto a substrate,
M[L1]x[L2]y
where M represents a metal, L1 and L2 respectively represents a first and second ligands. In addition, x and y are independently integers and a value of (x+y) is 3 to 5. An oxygen-containing compound is introduced into the chamber to form the metal oxide. The metal oxide is formed by reacting an oxygen of the oxygen-containing compound with the metal, and separating the ligand from the metal. Thus, the metal oxide having a superior step coverage and a high dielectric constant may be formed using the organic metal compound by an atomic layer deposition process.
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Citations
31 Claims
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1. A method of forming a metal oxide comprising:
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introducing an organic metal compound represented by the following chemical formula into a chamber to chemisorb the organic metal compound onto a substrate,
M[L1]x[L2]ywherein, M represents a metal, L1 and L2 respectively represent a first and second ligands, the first and second ligands independently include at least one ligand selected from the group consisting of a halide ligand, a diketonate ligand, an alkoxide ligand, an amino ligand, an alkoxyamine ligand, an amidinate ligand, and a multidentate ligand including at least two electron pair donors, L1 and L2 are substantially different from each other, and x and y are independently integers such that a value of (x+y) is an integer ranging from 3 to 5; removing a non-chemisorbed organic metal compound from the chamber; and introducing an oxygen-containing compound into the chamber to form a metal oxide, the metal oxide being formed by reacting an oxygen of the oxygen-containing compound with the metal, and to separate the first and second ligands from the metal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of forming a metal oxide comprising:
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introducing a first reactant including a metal, at least one alkoxide group and at least one amino group into a chamber to chemisorb the first reactant onto a substrate and to bond the alkoxide group and the amino group to the metal, wherein the first reactant is represented by the following chemical formula, wherein, M represents the metal and R1 to R6 independently represent a hydrogen or an alkyl group including 1 to 5 carbon atoms; removing a non-chemisorbed first reactant from the chamber; and introducing a second reactant into the chamber to form a metal oxide, the second reactant including an oxygen-containing compound that reacts with the metal to form the metal oxide, and to separate the alkoxide group and the amino group from the metal. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A method of forming a metal oxide comprising:
- introducing an organic metal compound represented by the following chemical formula into a chamber through a first line to chemisorb the organic metal compound onto a substrate,
M[L1]x[L2]ywherein, M represents a metal, L1 and L2 respectively represent a first and a second ligands, and independently includes at least one compound selected from the group consisting of a halide ligand, a diketonate ligand, an alkoxide ligand, an amino ligand, an alkoxyamine ligand, an amidinate ligand, and a multidentate ligand including at least two electron pair donors, L1 and L2 are different from each other, x and y are independently integers and a value of (x+y) is an integer of 3 to 5; removing a non-chemisorbed first reactant from the chamber by introducing a first purge gas into the chamber through the first line; introducing an oxygen-containing compound into the chamber through a second line to form a metal oxide, the metal oxide being formed by reacting an oxygen from the oxygen-containing compound with the metal, and separating the ligand from the metal; and removing an unreacted oxygen-containing compound and the ligand from the chamber by introducing a second purge gas into the chamber through the second line, the unreacted oxygen-containing compound including the oxygen-containing compound that has not reacted with a chemisorbed organic metal compound, the ligand being separated from the metal. - View Dependent Claims (25, 26, 27, 28, 29, 30, 31)
- introducing an organic metal compound represented by the following chemical formula into a chamber through a first line to chemisorb the organic metal compound onto a substrate,
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Current AssigneeSamsung Electronics Co. Ltd.
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Original AssigneeSamsung Electronics Co. Ltd.
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InventorsChon, Sang-Mun, Lee, Jung-Ho, Cho, Jun-Hyun, Choi, Jung-Sik
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Primary Examiner(s)Kebede; Brook
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Application NumberUS11/144,574Publication NumberTime in Patent Office788 DaysField of Search438/758, 438/761, 438/770, 438/778, 438/785, 438/789, 257/E21.006, 427/453US Class Current438/785CPC Class CodesC23C 16/40 OxidesC23C 16/45553 characterized by the use of...H01L 21/02164 the material being a silico...H01L 21/02181 the material containing haf...H01L 21/02186 the material containing tit...H01L 21/02189 the material containing zir...H01L 21/02192 the material containing at ...H01L 21/02205 the layer being characteris...H01L 21/02274 in the presence of a plasma...H01L 21/0228 deposition by cyclic CVD, e...H01L 21/3141 Deposition using atomic lay...H01L 21/31604 Deposition from a gas or va...H01L 21/31608 Deposition of SiO2 H01L21/3...H01L 21/31616 Deposition of Al2O3H01L 21/31637 Deposition of Tantalum oxid...H01L 21/31641 Deposition of Zirconium oxi...H01L 21/31645 Deposition of Hafnium oxide...
