×

Method of forming metal oxide using an atomic layer deposition process

  • US 7,250,379 B2
  • Filed: 06/03/2005
  • Issued: 07/31/2007
  • Est. Priority Date: 06/09/2004
  • Status: Active Grant
First Claim
Patent Images

1. A method of forming a metal oxide comprising:

  • introducing an organic metal compound represented by the following chemical formula into a chamber to chemisorb the organic metal compound onto a substrate,
    M[L1]x[L2]ywherein, M represents a metal, L1 and L2 respectively represent a first and second ligands, the first and second ligands independently include at least one ligand selected from the group consisting of a halide ligand, a diketonate ligand, an alkoxide ligand, an amino ligand, an alkoxyamine ligand, an amidinate ligand, and a multidentate ligand including at least two electron pair donors, L1 and L2 are substantially different from each other, and x and y are independently integers such that a value of (x+y) is an integer ranging from 3 to 5;

    removing a non-chemisorbed organic metal compound from the chamber; and

    introducing an oxygen-containing compound into the chamber to form a metal oxide, the metal oxide being formed by reacting an oxygen of the oxygen-containing compound with the metal, and to separate the first and second ligands from the metal.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×