Semiconductor device
First Claim
Patent Images
1. A semiconductor device, comprising:
- a drain electrode;
a source electrode;
a channel contacting the drain electrode and the source electrode, wherein the channel includes gallium oxide Ga2O3 with dopant selected from a group consisting of oxygen vacancies Si and Ge;
a gate electrode; and
a gate dielectric positioned between the gate electrode and the channel.
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Abstract
A semiconductor device can include a channel including a gallium oxide film.
27 Citations
21 Claims
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1. A semiconductor device, comprising:
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a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes gallium oxide Ga2O3 with dopant selected from a group consisting of oxygen vacancies Si and Ge; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A semiconductor device, comprising:
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a drain electrode; a source electrode; means for carrying electron flow to electrically couple the drain electrode and the source electrode, wherein the means for a channel includes means for Ga2O3 with dopant selected from a group consisting of oxygen vacancies Si and Ge; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel. - View Dependent Claims (9, 10, 11, 12)
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13. A semiconductor device formed by the steps, comprising:
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providing a drain electrode; providing a source electrode; providing a precursor composition including one or more compounds of a gallium precursor compound, wherein the means for a channel includes means for Ga2O3 with dopant selected from a group consisting of oxygen vacancies Si and Ge; depositing a channel of gallium oxide from the precursor composition to contact the drain electrode and the source electrode; providing a gate electrode; and providing a gate dielectric positioned between the gate electrode and the channel. - View Dependent Claims (14, 15)
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16. A display device, comprising:
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a plurality of display elements configured to operate collectively to display images, where each of the display elements includes a semiconductor device configured to control light emitted by the display element, the semiconductor device including; a drain electrode; a source electrode; a channel contacting the drain electrode and the source electrode, wherein the channel includes gallium oxide Ga2O3 with dopant selected from a group consisting of oxygen vacancies Si and Ge; a gate electrode; and a gate dielectric positioned between the gate electrode and the channel and configured to permit application of an electric field to the channel. - View Dependent Claims (17, 18, 19, 20, 21)
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Specification