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Semiconductor device

  • US 7,250,627 B2
  • Filed: 03/12/2004
  • Issued: 07/31/2007
  • Est. Priority Date: 03/12/2004
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a drain electrode;

    a source electrode;

    a channel contacting the drain electrode and the source electrode, wherein the channel includes gallium oxide Ga2O3 with dopant selected from a group consisting of oxygen vacancies Si and Ge;

    a gate electrode; and

    a gate dielectric positioned between the gate electrode and the channel.

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