Integrated circuit including power diode

• US 7,250,668 B2
• Filed: 01/20/2005
• Issued: 07/31/2007
• Est. Priority Date: 01/20/2005
• Status: Active Grant

• Current Assignee: Diodes Incorporated
• Original Assignee: Diodes Incorporated
• Inventors: Rodov, Vladimir, Chang, Paul, Hsueh, Wayne Y. W., Chern, Geeng-Chuan, Ghosh, Prognyan
• Primary Examiner(s): HO, TU TU V
• Application Number:
  US11/040,180
• Publication Number:
  US 20060157815A1
• Time in Patent Office: 922 Days
• Field of Search: 257/500
• US Class Current: 257/500
• CPC Class Codes: H01L 27/0629 in combination with diodes, or resistors, or capacitors
• CPC Class Codes: H01L 29/0692 Surface layout
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence
• CPC Class Codes: H01L 29/861 Diodes

Abstract

A method of fabricating a semiconductor integrated circuit including a power diode includes providing a semiconductor substrate of first conductivity type, fabricating a integrated circuit such as a CMOS transistor circuit in a first region of the substrate, and fabricating a power diode in a second region in the semiconductor substrate. Dielectric material is formed between the first region and the second regions thereby providing electrical isolation between the integrated circuit in the first region and the power diode in the second region. The power diode can comprise a plurality of MOS source/drain elements and associated gate elements all connected together by one electrode of the diode, and a semiconductor layer in the second region can function as another source/drain of the power diode.

Claims

1. A method of fabricating an integrated circuit including a power diode in a semiconductor body comprising the steps of:

a) providing a semiconductor substrate including a surface layer of a first conductivity type.

b) forming a dielectric material in a surface of the semiconductor substrate around a first region in which a power diode is to be fabricated and separated from a second region in which an integrated circuit is to be fabricated,

c) forming semiconductor material of a second conductivity type in the first region,

d) fabricating an integrated circuit in the second region,

e) fabricating a plurality of MOS source/drain elements and associated gate elements in a surface of a device region and in the semiconductor material of a second conductivity type,

f) forming a first diode electrode contacting the plurality of MOS source/drain elements and associated gate elements, and

g) forming a conductive via front the surface of the device region to the semiconductor material of the second conductivity type as a second diode electrode.

2. The method of claim 1 wherein b) includes forming a trench in the first region, and forming dielectric side wall spacers on the trench, and c) includes epitaxially growing semiconductor material of the second conductivity type in the trench.

3. The method of claim 1 wherein b) includes forming dielectric material in a surface of the semiconductor substrate, and c) includes implanting dopant of the second conductivity type into the first region.

4. The method of claim 1 and further comprising:

h) forming a doped guard ring of first conductivity type in the first region, wherein the first region abuts the dielectric material.

5. The method of claim 4 and further comprising:

i) forming a plug of the first conductivity type in the first region, wherein the first region extends into the semiconductor material of the second type.

6. The method of claim 1 wherein g) includes fanning dielectric spacers between the conductive via and the plurality of MOS source/drain elements.

7. The method of claim 1 wherein d) includes forming a plurality of P wells and a plurality of N wells for CMOS transistors.

8. A semiconductor integrated circuit comprising:

a semiconductor substrate having material of a first conductivity type;

a first region in the substrate in which an integrates circuit is fabricated;

a second region in the substrate having semiconductor material of a second conductivity type in which a power diode is fabricated;

dielectric material between the first region and the second region providing electrical isolation between the first region and the second region wherein the second region includes epitaxial semiconductor material grown in a trench in one surface of the substrate, and the dielectric material comprises spacers fanned on sidewalls of the trench; and

wherein the power diode includes a conductive layer on a surface of the substrate functioning as a first electrode, and a conductive via extending from the surface into the substrate and contacting semiconductor material of the second conductivity type which functions as a second electrode.

9. The integrated circuit of claim 8 wherein the dielectric material comprises silicon oxide formed in a surface of the semiconductor substrate, and the second region includes implanted dopant of a second conductivity type.

10. The integrated circuit of claim 9 wherein the dielectric material comprises silicon oxide.

11. The integrated circuit of claim 8 wherein the power diode comprises a plurality of MOS source/drain elements and associated gate elements all coupled by the first electrode, a semiconductor layer of a second conductivity type in the second region and in the plurality of MOS source/drain elements are fabricated, the semiconductor layer being contacted by the second electrode.

12. The integrated circuit of claim 11 wherein each MOS source/drain element is electrically coupleable to the semiconductor layer through a channel controlled by a gate element.

13. The integrated circuit of claim 12 wherein each channel is laterally graded under a gate element with a sloped P-N junction separating the channel region from the semiconductor layer.

14. The integrated circuit of claim 13 wherein the P-N junction underlies all of the gate element to provide reduced reverse bias leakage current.

15. The integrated circuit of claim 8 wherein the dielectric material comprises silicon oxide formed in a surface of the semiconductor substrate, and the second region includes implanted dopant of a second conductivity type.

16. The integrated circuit of claim 15 wherein the dielectric material comprises silicon oxide.

17. The integrated circuit of claim 8 wherein the second region includes epitaxial semiconductor material grown in a trench in surface of the substrate, and the dielectric material comprises spacers formed on side walls of the trench.