Method of spark-processing silicon and resulting materials
First Claim
1. An electroluminescence device, comprising:
- a silicon substrate having a first surface and a second surface;
an ohmic contact on the first surface of the silicon substrate;
spark-processed silicon on the second surface of the silicon substrate, wherein the spark-processed silicon on the second surface of the silicon substrate is produced by;
applying to the second surface of the silicon substrate sparks of sufficiently high voltage to effect the production of spark-processed silicon, wherein applying to the second surface of the silicon substrate sparks of sufficiently high voltage to effect the production of spark-processed silicon creates a spark plasma; and
introducing into the spark plasma a volatile liquid in which particles are suspended;
a semitransparent film of an electrically conducting material on the surface of the spark-processed silicon; and
a means for applying a voltage between the ohmic contact and the semitransparent film, wherein the semitransparent film is negatively biased with respect the ohmic contact, wherein light is emitted from the spark-processed silicon and passes through the semitransparent film upon application of a sufficient voltage between the ohmic contact and the semitransparent film.
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Accused Products
Abstract
The subject invention pertains to a method of spark processing silicon and resulting materials. The subject invention also relates to electroluminescent devices incorporating the materials produced by the subject method. The subject method for spark-processing can enhance the EL output, as compared with conventional spark-processed (sp) silicon. The enhancement of EL output can be due, at least in part, to increasing the light emitting area. The subject method can smooth the sp surface, so as to allow more complete coverage of the sp area with a continuous, semitransparent, conducting film. The smoothening of the sp surface can be accomplished by, for example, introducing into the spark plasma a volatile liquid, such as methanol, ethanol, acetone, in which particles can be suspended and/or in which a heavy ion salt is dissolved. The particles preferably float in the volatile liquid, rather than settle quickly. In a specific embodiment, silicon particles in the range of about 0.2 μm to about 20 μm in size can be suspended in the volatile liquid, such as methanol. The volatile liquid/silicon-particle suspension or volatile liquid/heavy ion salt solution, can then be inserted into a means for applying the mixture to the surface of a silicon wafer during spark-processing.
34 Citations
30 Claims
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1. An electroluminescence device, comprising:
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a silicon substrate having a first surface and a second surface; an ohmic contact on the first surface of the silicon substrate; spark-processed silicon on the second surface of the silicon substrate, wherein the spark-processed silicon on the second surface of the silicon substrate is produced by; applying to the second surface of the silicon substrate sparks of sufficiently high voltage to effect the production of spark-processed silicon, wherein applying to the second surface of the silicon substrate sparks of sufficiently high voltage to effect the production of spark-processed silicon creates a spark plasma; and introducing into the spark plasma a volatile liquid in which particles are suspended; a semitransparent film of an electrically conducting material on the surface of the spark-processed silicon; and a means for applying a voltage between the ohmic contact and the semitransparent film, wherein the semitransparent film is negatively biased with respect the ohmic contact, wherein light is emitted from the spark-processed silicon and passes through the semitransparent film upon application of a sufficient voltage between the ohmic contact and the semitransparent film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 23, 24)
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22. An electroluminescence device, comprising:
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a silicon substrate having a first surface and a second surface; an ohmic contact on the first surface of the silicon substrate; spark-processed silicon on the second surface of the silicon substrate, wherein the spark-processed silicon on the second surface of the silicon substrate is produced by; applying to the second surface of the silicon substrate sparks of sufficiently high voltage to effect the production of spark-processed silicon, wherein applying to the second surface of the silicon substrate sparks of sufficiently high voltage to effect the production of spark-processed silicon creates a spark plasma; and introducing into the spark plasma a volatile liquid in which a salt of a heavy ion is dissolved; a semitransparent film of an electrically conducting material on the surface of the spark-processed silicon; and a means for applying a voltage between the ohmic contact and the semitransparent film, wherein the semitransparent film is negatively biased with respect to the ohmic contact, wherein light is emitted from the spark-processed silicon and passes through the semitransparent film upon application of a sufficient voltage between the ohmic contact and the semitransparent film. - View Dependent Claims (25, 26, 27, 28, 29, 30)
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Specification
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- Resources
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Current AssigneeUniversity of Florida Research Foundation, Incorporated (State University System of Florida)
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Original AssigneeUniversity of Florida Research Foundation, Incorporated (State University System of Florida)
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InventorsHummel, Rolf E., Shepherd, Nigel D.
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Primary Examiner(s)Owens; Douglas W.
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Assistant Examiner(s)Vu; Jimmy
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Application NumberUS11/182,372Publication NumberTime in Patent Office746 DaysField of Search315/169.1, 315/169.3, 204/164, 204/192.23, 438/26, 438/69, 438/466, 438/584, 257/79, 257/103US Class Current315/169.1CPC Class CodesC01B 33/02 Silicon forming single crys...C01B 33/18 Preparation of finely divid...
