Active matrix substrate, method of manufacturing the same, and image sensor incorporating the same

• US 7,250,991 B2
• Filed: 03/10/2004
• Issued: 07/31/2007
• Est. Priority Date: 03/11/1999
• Status: Expired due to Fees

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Shimada, Takayuki, Izumi, Yoshihiro, Nagata, Hisashi
• Primary Examiner(s): Duong; Thoi V.
• Application Number:
  US10/795,981
• Publication Number:
  US 20040169991A1
• Time in Patent Office: 1,238 Days
• Field of Search: 349/38, 349/39, 349/43, 349/138, 349/139, 349/141, 349/143, 349/147
• US Class Current: 349/38
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70

Abstract

A signal line and a pixel capacitor wire that doubles as a pixel capacitor electrode are fabricated parallel to each other from the same electrode layer through patterning thereof. Therefore, no additional steps are required to form the pixel capacitor wire. In such an arrangement, the pixel capacitor wire and the signal line are disposed parallel to each other; therefore, delays of signal transmission in the signal line and crosstalk between pixels are prevented from occurring. The active matrix substrate incorporating this arrangement is suitably used in liquid crystal display devices, image sensors, and the like. Similar advantages are available with an arrangement in which the signal line and the pixel capacitor wire are disposed parallel to each other, and the storage capacitor electrode, which will constitute a storage capacitor with the pixel electrode therebetween, and the scanning line are fabricated from the same electrode layer through patterning thereof.

Claims

1. An active matrix substrate, comprising:

a pixel electrode provided in a pixel area;

a scanning line and a signal line;

a switching element electrically connected to the scanning line, the signal line, and the pixel electrode;

a storage capacitor electrode for a storage capacitor; and

a storage capacitor common line disposed parallel to the signal line so as to be electrically connected to the storage capacitor electrode, the storage capacitor common line extending across a plurality of pixels, wherein

storage capacitance is provided between the pixel electrode and the storage capacitor electrode,

the scanning line and the storage capacitor electrode are fabricated from a same material in a single patterning; and

wherein the storage capacitor electrode and the storage capacitor common line are patterned in different steps so as to have an insulating film provided partially therebetween, and wherein the given storage capacitor electrode does not extend across a plurality of different pixels.

2. The active matrix substrate as defined in claim 1, wherein

the signal line and the pixel electrode are fabricated from a single conductive layer through patterning thereof.

3. The active matrix substrate as defined in claim 1, further comprising an interlayer insulation film on which the pixel electrode is provided.

4. The active matrix substrate as defined in claim 1, further comprising a gate insulation film for covering a gate electrode of the switching element, wherein

the pixel electrode is disposed opposing the storage capacitor electrode across the gate insulation film.

5. The active matrix substrate as defined in claim 1, wherein

the scanning line is anodized.

6. The active matrix substrate of claim 1, wherein a plurality of the storage capacitor common lines are provided substantially parallel to the signal line on the active matrix substrate, and wherein the plurality of storage capacitor common lines are provided for a plurality of columns of pixels, respectively, so that a storage capacitor common line is provided for each column of pixels in the plurality.

7. An active matrix substrate, comprising:

a pixel electrode provided in a pixel area;

a scanning line and a signal line;

a switching element electrically connected to the scanning line, the signal line, and the pixel electrode;

a storage capacitor electrode for a storage capacitor; and

a storage capacitor common line disposed at least partially parallel to the signal line so as to be electrically connected to the storage capacitor electrode, the storage capacitor common line extending across a plurality of pixels, wherein

storage capacitance is provided between the pixel electrode and the storage capacitor electrode, and wherein the given storage capacitor electrode does not extend across a plurality of different pixels,

the scanning line and the storage capacitor electrode are fabricated from a same material in a single patterning; and

wherein in another patterning the signal line, the pixel electrode, and the storage capacitor common line are fabricated of a same material in a single patterning.

8. The active matrix substrate of claim 7, wherein a plurality of the storage capacitor common lines are provided substantially parallel to the signal line on the active matrix substrate, and wherein the plurality of storage capacitor common lines are provided for a plurality of columns of pixels, respectively, so that a storage capacitor common line is provided for each column of pixels in the plurality.

9. An active matrix substrate, comprising:

a pixel electrode provided in a pixel area;

a scanning line and a signal line;

a switching element electrically connected to the scanning line, the signal line, and the pixel electrode;

a storage capacitor electrode for a storage capacitor; and

a storage capacitor common line disposed at least partially parallel to the signal line so as to be electrically connected to the storage capacitor electrode, the storage capacitor common line extending across a plurality of pixels, and wherein the signal line and the storage capacitor common line are fabricated of a same material in a single patterning, wherein

storage capacitance is provided between the pixel electrode and the storage capacitor electrode, and wherein the given storage capacitor electrode does not extend across a plurality of different pixels,

the scanning line and the storage capacitor electrode are fabricated from a same material in a single patterning;

a protection film for covering the switching element; and

an interlayer insulation film interposed between the pixel electrode and the protection film.

10. The active matrix substrate as defined in claim 9, wherein

a contact hole is formed through the interlayer insulation film and the protection film so as to electrically connecting the pixel electrode to the switching element.

11. The active matrix substrate of claim 9, wherein a plurality of the storage capacitor common lines are provided substantially parallel to the signal line on the active matrix substrate, and wherein the plurality of storage capacitor common lines are provided for a plurality of columns of pixels, respectively, so that a storage capacitor common line is provided for each column of pixels in the plurality.

12. An image sensor, comprising:

an active matrix substrate;

a conversion section for converting incident magnetoelectric radiation to electric charges; and

bias voltage application means for causing a storage capacitor to store the electric charges, wherein

the active matrix substrate includes;

a pixel electrode provided in a pixel area;

a scanning line and a signal line;

a switching element electrically connected to the scanning line, the signal line, and the pixel electrode;

a storage capacitor electrode for a storage capacitor; and

a storage capacitor common line disposed at least partially parallel to the signal line so as to be electrically connected to the storage capacitor electrode, the storage capacitor common line extending across a plurality of pixels, wherein

the scanning line and the storage capacitor electrode are fabricated from a same material in a single patterning; and

wherein the storage capacitor electrode and the storage capacitor common line are patterned in different steps so as to have an insulating film provided partially therebetween, and wherein the given storage capacitor electrode does not extend across a plurality of different pixels.

13. The image sensor as defined in claim 12, further comprising:

a gate insulation film for covering a gate electrode of the switching element; and

a conductive body layer deposited on the gate insulation film so as to be connected to the switching element, wherein

the storage capacitor electrode and the conductive body layer constitute the storage capacitor across the gate insulation film.

14. The image sensor as defined in claim 12, wherein the scanning line is anodized.

15. The active matrix substrate of claim 12, wherein a plurality of the storage capacitor common lines are provided substantially parallel to the signal line on the active matrix substrate, and wherein the plurality of storage capacitor common lines are provided for a plurality of columns of pixels, respectively, so that a storage capacitor common line is provided for each column of pixels in the plurality.

16. An active matrix substrate, comprising:

a pixel electrode provided in each pixel area bounded by a scanning line and a signal line that are disposed in a matrix as a whole;

a switching element connected to the scanning line, the signal line, and the pixel electrode;

a storage capacitor electrode for constituting a storage capacitor; and

a storage capacitor common line disposed parallel to the signal line so as to be connected to the storage capacitor electrode, the storage capacitor common line extending across a plurality of pixels, wherein

the storage capacitor is formed between the pixel electrode and the storage capacitor electrode, and wherein the given storage capacitor electrode does not extend across a plurality of different pixels,

the scanning line and the storage capacitor electrode are fabricated from a single electrode layer through patterning thereof, and

the signal line and the storage capacitor common line are fabricated of a same material in a single patterning thereof.

17. The active matrix substrate of claim 16, wherein a plurality of the storage capacitor common lines are provided substantially parallel to the signal line on the active matrix substrate, and wherein the plurality of storage capacitor common lines are provided for a plurality of columns of pixels, respectively, so that a storage capacitor common line is provided for each column of pixels in the plurality.