Electronically variable capacitor array

• US 7,251,121 B2
• Filed: 03/06/2006
• Issued: 07/31/2007
• Est. Priority Date: 03/05/2005
• Status: Active Grant

• Current Assignee: ASM America Incorporated (ASM International NV)
• Original Assignee: Innovations Engineering Incorporated
• Inventors: Bhutta, Imran Ahmed
• Primary Examiner(s): Ha; Nguyen T.
• Application Number:
  US11/368,690
• Publication Number:
  US 20060198077A1
• Time in Patent Office: 512 Days
• Field of Search: 361/328, 361/321.1, 361/321.2, 361/306.1, 361/306.3, 361272-277, 341/150, 341/172
• US Class Current: 361/328
• CPC Class Codes: H01G 5/38 Multiple capacitors, e.g. ganged
• CPC Class Codes: H01G 5/40 Structural combinations of variable capacitors with other electric elements not covered by this subclass, the structure mainly consisting of a capacitor, e.g. RC combinations

Abstract

A capacitor array may include a bottom electrode, a plurality of top electrodes, at least one dielectric medium and a plurality of switching mechanisms. Each switching mechanism may separably electronically connect two or more top electrodes. The at least one dielectric medium may include a plurality of discrete capacitors each in contact with a top electrode and the bottom electrode.

Claims

1. A capacitor array, comprising:

a bottom electrode;

a plurality of top electrodes;

at least one first dielectric medium; and

a plurality of switching mechanisms, wherein each switching mechanism independently separably electronically connects two or more top electrodes.

2. The capacitor array of claim 1, wherein the at least one first dielectric medium comprises a plurality of discrete capacitors, wherein each discrete capacitor is in contact with the bottom electrode and a corresponding top electrode.

3. The capacitor array of claim 1 wherein the at least one first dielectric medium comprises a dielectric medium in contact with the bottom electrode and each top electrode.

4. The capacitor array of claim 1 wherein the bottom electrode comprises a first metallization layer.

5. The capacitor array of claim 4 wherein the bottom electrode further comprises a second dielectric medium.

6. The capacitor array of claim 5 wherein the second dielectric medium comprises one or more of Al₂O₃;

AIN; and

BeO.

7. The capacitor array of claim 5 wherein the bottom electrode further comprises a second metallization layer, wherein the first metallization layer is electrically connected to the second metallization layer through the dielectric layer.

8. The capacitor array of claim 1 wherein at least one top electrode comprises a first metallization layer and a second metallization layer, wherein the first metallizafion layer is electrically connected to the second metallization layer through a second dielectric layer.

9. The capacitor array of claim 1 wherein the plurality of switching mechanisms comprise one or more of the following:

a micro electro mechanical switch;

a PiN diode,

a solid state relay, and

a field effect transistor.

10. The capacitor array of claim 1 wherein a top electrode and the bottom electrode are electrically connected to an external circuit.

11. A capacitor array, comprising:

a bottom electrode;

a plurality of top electrodes;

a plurality of discrete capacitors, wherein each discrete capacitor is in contact with the bottom electrode and a top electrode corresponding to the discrete capacitor; and

a plurality of switching mechanisms, wherein each switching mechanism independently separably electronically connects two or more top electrodes.

12. The capacitor array of claim 11, further comprising:

a first dielectric medium, wherein the bottom electrode is located on the first dielectric medium; and

a second dielectric medium, wherein the plurality of top electrodes are located on the second dielectric medium.

13. The capacitor array of claim 12 wherein the first dielectric medium comprises one or more of Al₂O₃;

AlN; and

BeO.

14. The capacitor array of claim 11 wherein a first top electrode is electrically connected to a second top electrode when a switching mechanism positioned between the first top electrode and the second top electrode receives an ON signal.

15. The capacitor array of claim 11 wherein a first top electrode and the bottom electrode are each electrically connected to an external circuit.

16. A capacitor array, comprising:

a bottom electrode;

a plurality of top electrodes;

a dielectric medium in contact with the bottom electrode and each lop electrode; and

a plurality of switching mechanisms, wherein each switching mechanism independently separably electronically connects two or more top electrodes.

17. The capacitor array of claim 16 wherein the dielectric medium comprises one or more of SiO₂;

an organic dielectric; and

an inorganic dielectric.

18. The capacitor array of claim 16 wherein a first top electrode is electrically connected to a second top electrode when a switching mechanism between the first top electrode and the second top electrode receives an ON signal.

19. The capacitor array of claim 16 wherein a first top electrode and the bottom electrode are each electrically connected to an external circuit.