Television receiver including an integrated band selection filter

• US 7,251,466 B2
• Filed: 08/20/2004
• Issued: 07/31/2007
• Est. Priority Date: 08/20/2004
• Status: Expired due to Fees

• Current Assignee: CRC Press, LLC, CF Crespe LLC (SoftBank Group Corp.)
• Original Assignee: Xceive Corporation (Cresta Technology Corporation)
• Inventors: Porret, Alain-Serge, Favrat, Pierre, Python, Dominique, Margairaz, Didier
• Primary Examiner(s): VO, NGUYEN THANH
• Application Number:
  US10/923,595
• Publication Number:
  US 20060040628A1
• Time in Patent Office: 1,075 Days
• Field of Search: 455/179.1, 455/180.1, 455/180.2, 455/180.3, 455/183.1, 455/188.1, 455/188.2, 455/190.1, 455/191.1, 455/191.2, 455/180.4, 455/193.2, 455/193.3, 455/285, 455/302, 455/307, 455323-324, 455/266, 455339-340, 348/731, 333175-176, 333/24.C, 333/167, 327/553, 327/554, 327/557
• US Class Current: 455/190.1
• CPC Class Codes: H03J 2200/10 Tuning of a resonator by means of digitally controlled capacitor bank
• CPC Class Codes: H03J 5/244 using electronic means

Abstract

A tuner circuit includes a band selection filter coupled to receive an input RF signal and provide a band selected output signal where the band selection filter includes a bank of band pass filters. Each band pass filter includes an inductor and a variable capacitor forming an LC resonator where the inductor is an integrated planar spiral inductor. The tuner circuit further includes a frequency conversion circuit coupled to receive an input signal corresponding to the band selected output signal and provide a frequency converted output signal having a predetermined frequency. The integrated planar spiral inductor can be formed using a single metal spiral or multiple metal spirals. In a multi-spiral structure, a first metal spiral having an inward spiral pattern and a second metal spiral having an outward spiral pattern to form an inductor with large inductance, low series resistance and high Q values, even at low frequency.

Claims

1. A tuner circuit receiving an input RF signal having a first transmission spectrum, the tuner circuit comprising:

a band selection filter coupled to receive the input RF signal and provide a band selected output signal, wherein the band selection filter comprises a plurality of band pass filters, each band pass filter comprising an inductor and a variable capacitor forming an LC resonator, the inductor of the LC resonator being formed as an integrated planar spiral inductor; and

a frequency conversion circuit coupled to receive an input signal corresponding to the band selected output signal of the band selection filter and provide a frequency converted output signal having a predetermined frequency,

wherein the band selection filter comprises;

a first variable amplifier having an input node coupled to receive the input RF signal and an output node providing a first output signal;

a plurality of band pass filters connected in parallel between the output node of the first variable amplifier and a first node, the first node providing the band selected output signal of the band selection filter, each band pass filter being disposed to select a different portion of the first transmission spectrum so that the plurality of band pass filters is disposed to select the entire frequency range of the first transmission spectrum; and

each band pass filter comprising;

a first switch coupled between the output node of the first variable amplifier and a second node;

a plurality of switchably connected capacitors connected in parallel between the second node and a first voltage, each switchably connected capacitor comprising a capacitor and a switch connected in series between the second node and the first voltage;

an inductor coupled between the second node and a second voltage, the inductor being an integrated planar spiral inductor, wherein the inductance of the inductor and the capacitance provided by the plurality of switchably connected capacitors form an LC resonator; and

a unity gain buffer having an input node coupled to the second node and an output node coupled to the first node providing the band selected output signal.

2. The tuner circuit of claim 1, wherein the tuner circuit is formed as a single integrated circuit.

3. The tuner circuit of claim 1, further comprising:

a variable amplifier coupled to receive the band selected output signal from the band selection filter and provide an amplified output signal,

wherein the frequency conversion circuit is coupled to receive the amplified output signal of the variable amplifier as the input signal.

4. The tuner circuit of claim 1, wherein the frequency conversion circuit comprises:

a notch filter coupled to receive the input signal corresponding to the band selected output signal and for performing image rejection filtering on the input signal to provide an image filtered output signal; and

a mixer circuit coupled to receive the image filtered output signal from the notch filter and perform frequency conversion on the image filtered output signal to generate the frequency converted output signal having the predetermined frequency, the mixer circuit being coupled to a phase-locked loop for controlling the frequency conversion.

5. The tuner circuit of claim 1, wherein the frequency conversion circuit comprises:

an image rejection mixer coupled to receive the input signal corresponding to the band selected output signal and for performing image rejection filtering and frequency conversion on the input signal to provide the frequency converted output signal having the predetermined frequency.

6. The tuner circuit of claim 5, wherein the frequency conversion circuit comprises:

a quadrature mixer coupled to receive the input signal corresponding to the band selected output signal and for performing image rejection filtering and frequency conversion, the quadrature mixer providing an output signal, the quadrature mixer being coupled to a phase-locked loop for controlling the frequency conversion; and

a polyphase filter coupled to receive the output signal of the quadrature mixer and providing the frequency converted output signal having the predetermined frequency.

7. The tuner circuit of claim 5, wherein the frequency conversion circuit comprises:

a first polyphase filter coupled to receive the input signal corresponding to the band selected output signal and provide a first output signal;

a double quadrature mixer coupled to receive the first output signal and for performing image rejection filtering and frequency conversion, the double quadrature mixer providing a second output signal, the double quadrature mixer being coupled to a phase-locked loop for controlling the frequency conversion; and

a second polyphase filter coupled to receive the second output signal and providing the frequency converted output signal having the predetermined frequency.

8. The tuner circuit of claim 1, wherein the first switch and the switch in each of the plurality of switchably connected capacitors each comprises an NMOS or PMOS transistor.

9. The tuner circuit of claim 8, wherein each band pass filter further comprises a plurality of resistors, each resistor associated with one of the plurality of switchably connected capacitors, each resistor having a first terminal coupled to a node between the switch and the capacitor of the respective switchably connected capacitor and a third voltage.

10. The tuner circuit of claim 1, wherein the integrated planar spiral inductor comprises an integrated planar spiral inductor having selectable inductance, the inductor comprising a first terminal at a first end of the spiral inductor and a second terminal, the inductor comprising a plurality of taps coupled to different portions of the spiral inductor including a second end of the spiral inductor, each tap being coupled to the second terminal through a switch, wherein a switch is selected to select the inductance for the inductor.

11. The tuner circuit of claim 1, wherein the integrated planar spiral inductor comprises a single-spiral metal spiral inductor having an outer end as a first terminal and an inner end being coupled to form a second terminal of the inductor, the metal spiral being formed using a set of metal layers on a semiconductor substrate.

12. The tuner circuit of claim 1, wherein the integrated planar inductor comprises a multi-spiral integrated planar inductor having a first terminal and a second terminal and formed in a semiconductor substrate, the inductor comprising:

a first metal spiral formed in a first set of metal layers connected in parallel wherein the first metal spiral has an outer end being the first terminal of the inductor and the first metal spiral spirals inward to an inner end in the center of the spiral;

a second metal spiral formed in a second set of metal layers connected in parallel and overlying the first metal spiral, wherein the second metal spiral has an inner end in the center of the spiral and being coupled to the inner end of the first metal spiral through a metal interconnect and the second metal spiral spirals outward to an outer end being the second terminal of the inductor; and

a dielectric layer formed between the first metal spiral and the second metal spiral isolating the first metal spiral from the second metal spiral except for the metal interconnect.

13. The tuner circuit of claim 12, wherein the first metal spiral and the second metal spiral each has a circular or octagonal shape.

14. The tuner circuit of claim 12, wherein the first metal spiral and the second metal spiral each has a square or rectangular shape.

15. The tuner circuit of claim 12, wherein the thickness of each of the first set and second set of metal layers is at least 2 μ

m.

16. The tuner circuit of claim 12, wherein the first set of metal layers and the second set of metal layers used to form the multi-spiral integrated planar inductor each has a line width of at least 5 μ

m.

17. The tuner circuit of claim 1, wherein the integrated planar inductor comprises a multi-spiral integrated planar inductor having a first terminal and a second terminal and formed in a semiconductor substrate, the inductor comprising:

a plurality of metal spirals, each metal spiral being formed in a respective set of metal layers and each set of metal layers being isolated from the metal layers of the other spirals by a dielectric layer, the plurality of metal spirals comprising a plurality of odd metal spirals and a plurality of even metal spirals;

each odd metal spiral of the plurality of odd metal spirals having an outer end and an inner end and an inward spiral pattern from the outer end to the inner end; and

each even metal spiral of the plurality of even metal spirals having an outer end and an inner end and an outward spiral pattern from the inner end to the outer end,

wherein the plurality of metal spirals comprises alternating odd metal spirals and even metal spirals connected in series to form the inductor, the inner end of an odd metal spiral being connected to the inner end of the next even metal spiral and the output end of an even metal spiral being connected to the outer end of the next odd metal spiral.

18. The tuner circuit of claim 1, wherein the inductor in a fist band pass filter of the plurality of band pass filters comprises a multi-tap integrated planar spiral inductor, the first band pass filter further comprising a plurality of unity gain buffer, a first unity gain buffer having an input node coupled to the second node and an output node coupled to the first node, and each of the remaining unity gain buffers having an input node coupled to a respective tap of the multi-tap integrated planar spiral inductor and an output node coupled to the first node.

19. The tuner circuit of claim 1, wherein the unity gain buffers in the plurality of band pass filters are divided into a plurality of groups, the output nodes of the unity gain buffers in a group being coupled together and to an input node of a respective unity gain buffer in a second set of unity gain buffers, the output nodes of the second set of unity gain buffers being coupled to the first node.

20. A band pass filter bank for a television tuner for tuning an input RF signal having a first transmission spectrum, the band pass filter bank comprising:

a first variable amplifier having an input node coupled to receive the input RF signal and an output node providing a first output signal;

a plurality of band pass filters connected in parallel between the output node of the first variable amplifier and a first node, the first node providing the band selected output signal of the band pass filter bank, each band pass filter being disposed to select a different portion of the first transmission spectrum so that the plurality of band pass filters is disposed to select the entire frequency range of the first transmission spectrum; and

each band pass filter comprising;

a first switch coupled between the output node of the first variable amplifier and a second node;

a plurality of switchably connected capacitors connected in parallel between the second node and a first voltage, each switchably connected capacitor comprising a capacitor and a switch connected in series between the second node and the first voltage;

an inductor coupled between the second node and a second voltage, the inductor being an integrated planar spiral inductor, wherein the inductance of the inductor and the capacitance provided by the plurality of switchably connected capacitors form an LC resonator; and

a unity gain buffer having an input node coupled to the second node and an output node coupled to the first node providing the band selected output signal.

21. The band pass filter bank of claim 20, wherein the first switch and the switch in each of the plurality of switchably connected capacitors each comprise an NMOS or PMOS transistor.

22. The band pass filter bank of claim 20, wherein each band pass filter further comprises a plurality of resistors, each resistor associated with one of the plurality of switchably connected capacitors, each resistor having a first terminal coupled to a node between the switch and the capacitor of the respective switchably connected capacitor and a third voltage.

23. The band pass filter bank of claim 20, wherein the integrated planar spiral inductor comprises an integrated planar spiral inductor having selectable inductance, the inductor comprising a first terminal at a first end of the spiral inductor and a second terminal, the inductor comprising a plurality of taps coupled to different portions of the spiral inductor including a second end of the spiral inductor, each tap being coupled to the second terminal through a switch, wherein a switch is selected to select the inductance for the inductor.

24. The band pass filter bank of claim 20, wherein the integrated planar spiral inductor comprises a single-spiral metal spiral inductor having an outer end as a first terminal and an inner end being coupled to form a second terminal of the inductor, the metal spiral being formed using a set of metal layers on a semiconductor substrate.

25. The band pass filter bank of claim 20, wherein the integrated planar spiral inductor comprises a multi-spiral integrated planar spiral inductor having a first terminal and a second terminal and formed in a semiconductor substrate, the inductor comprising:

a first metal spiral formed in a first set of metal layers wherein the first metal spiral has an outer end being the first terminal of the inductor and the first metal spiral spirals inward to an inner end in the center of the spiral;

a second metal spiral formed in a second set of metal layers and overlying the first metal spiral, wherein the second metal spiral has an inner end in the center of the spiral and being coupled to the inner end of the first metal spiral through a metal interconnect and the second metal spiral spirals outward to an outer end being the second terminal of the inductor; and

a dielectric layer formed between the first metal spiral and the second metal spiral isolating the first metal spiral from the second metal spiral except for the metal interconnect.

26. The band pass filter bank of claim 25, wherein the first metal spiral and the second metal spiral each has a circular or octagonal shape.

27. The band pass filter bank of claim 25, wherein the first metal spiral and the second metal spiral each has a square or rectangular shape.

28. The band pass filter bank of claim 25, wherein the first set of metal layers and the second set of metal layers used to form the multi-spiral integrated planar spiral inductor each has a thickness of at least 3 μ

m.

29. The band pass filter bank of claim 25, wherein the first set of metal layers and the second set of metal layers used to form the multi-spiral integrated planar spiral inductor each has a line width of at least 5 μ

m.

30. The band pass filter bank of claim 20, wherein the integrated planar spiral inductor comprises a multi-spiral integrated planar spiral inductor having a first terminal and a second terminal and formed in a semiconductor substrate, the inductor comprising:

a plurality of metal spirals, each metal spiral being formed in a respective set of metal layers and each set of metal layers being isolated from another set of metal layers by a dielectric layer, the plurality of metal spirals comprising a plurality of odd metal spirals and a plurality of even metal spirals;

each odd metal spiral of the plurality of odd metal spirals having an outer end and an inner end and an inward spiral pattern from the outer end to the inner end; and

each even metal spiral of the plurality of even metal spirals having an outer end and an inner end and an outward spiral pattern from the inner end to the outer end,

wherein the plurality of metal spirals comprises alternating odd metal spirals and even metal spirals connected in series to form the inductor, the inner end of an odd metal spiral being connected to the inner end of the next even metal spiral and the output end of an even metal spiral being connected to the outer end of the next odd metal spiral.

31. The band pass filter bank of claim 20 wherein an inductor in a first band pass filter of the plurality of band pass filters has an inductance value suitable for operation in a low frequency range.

32. The band pass filter bank of claim 31, wherein the low frequency range comprises frequencies that are less than 500 MHz.

33. The band pass filter bank of claim 20, wherein the inductor in a fist band pass filter of the plurality of band pass filters comprises a multi-tap integrated planar spiral inductor, the first band pass filter further comprising a plurality of unity gain buffer, a first unity gain buffer having an input node coupled to the second node and an output node coupled to the first node, and each of the remaining unity gain buffers having an input node coupled to a respective tap of the multi-tap integrated planar spiral inductor and an output node coupled to the first node.

34. The band pass filter bank of claim 20, wherein the unity gain buffers in the plurality of band pass filters are divided into a plurality of groups, the output nodes of the unity gain buffers in a group being coupled together and to an input node of a respective unity gain buffer in a second set of unity gain buffers, the output nodes of the second set of unity gain buffers being coupled to the first node.

35. A band pass filter for filtering an input RF signal, comprising:

a first variable amplifier having an input node coupled to receive the input RF signal and an output node providing a first output signal;

a band pass filter connected between the output node of the first variable amplifier and a first node providing the filtered output signal, the band pass filter comprising;

a first switch coupled between the output node of the first variable amplifier and a second node;

a plurality of switchably connected capacitors connected in parallel between the second node and a first voltage, each switchably connected capacitor comprising a capacitor and a switch connected in series between the second node and the first voltage;

an inductor coupled between the second node and a second voltage, the inductor being an integrated planar spiral inductor, wherein the inductance of the inductor and the capacitance provided by the plurality of switchably connected capacitors form an LC resonator; and

a unity gain buffer having an input node coupled to the second node and an output node coupled to the first node providing the filtered output signal.

36. The band pass filter of claim 35, wherein the first switch and the switch in each of the plurality of switchably connected capacitors each comprise an NMOS or PMOS transistor.

37. The band pass filter of claim 35, further comprising a plurality of resistors, each resistor associated with one of the plurality of switchably connected capacitors, each resistor having a first terminal coupled to a node between the switch and the capacitor of the respective switchably connected capacitor and a third voltage.

38. The band pass filter of claim 35, wherein the integrated planar spiral inductor comprises an integrated planar spiral inductor having selectable inductance, the inductor comprising a first terminal at a first end of the spiral inductor and a second terminal, the inductor comprising a plurality of taps coupled to different portions of the spiral inductor including a second end of the spiral inductor, each tap being coupled to the second terminal through a switch, wherein a switch is selected to select the inductance for the inductor.

39. The band pass filter of claim 35, wherein the integrated planar spiral inductor comprises a single-layer metal spiral having an outer end as a first terminal and an inner end being coupled to form a second terminal of the inductor, the metal spiral being formed using a set of metal layers on a semiconductor substrate.

40. The band pass filter of claim 35, wherein the integrated planar spiral inductor comprises a multi-spiral integrated planar spiral inductor having a first terminal and a second terminal and formed in a semiconductor substrate, the inductor comprising:

a plurality of metal spirals, each metal spiral being formed in a respective set of metal layers and each set of metal layers being isolated from another set of metal layers by a dielectric layer, the plurality of metal spirals comprising a plurality of odd metal spirals and a plurality of even metal spirals;

each odd metal spiral of the plurality of odd metal spirals having an outer end and an inner end and an inward spiral pattern from the outer end to the inner end; and

each even metal spiral of the plurality of even metal spirals having an outer end and an inner end and an outward spiral pattern from the inner end to the outer end,

wherein the plurality of metal spirals comprises alternating odd metal spirals and even metal spirals connected in series to form the inductor, the inner end of an odd metal spiral being connected to the inner end of the next even metal spiral and the output end of an even metal spiral being connected to the outer end of the next odd metal spiral.

41. The band pass filter of claim 35, wherein the inductor in the band pass filter comprises a multi-tap integrated planar spiral inductor, the band pass filter further comprising a plurality of unity gain buffer, a first unity gain buffer having an input node coupled to the second node and an output node coupled to the first node, and each of the remaining unity gain buffers having an input node coupled to a respective tap of the multi-tap integrated planar spiral inductor and an output node coupled to the first node.