Method for the manufacturing of a capacitive pressure sensor, and a capacitive pressure sensor
First Claim
1. A method of manufacturing a capacitive pressure sensor out of a silicon wafer element, in which methodthe silicon wafer is masked for wet etching,the silicon wafer is etched,the etching mask is removed from the silicon waferthe silicon wafer is attached to a support structure, andthe silicon wafer is cut into separate pressure sensor elements,wherein the etching mask (18) is attached over pressure sensor structures, essentially diamond shaped in relation to the direction <
-
110>
, to be anisotropically wet etched into a silicon wafer, which is oriented in the direction (100), such that the ends of slots (19) in the etching mask (18) coincide with the corners of the pressure sensor structures to be etched.
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Abstract
The invention relates to measuring devices for the measuring of pressure, and more specifically to capacitive pressure sensors. The silicon crystal planes {111} are located at the corners of a wet etched membrane well of a pressure sensor element according to the present invention. An object of the invention is to provide an improved method of manufacturing a capacitive pressure sensor, and a capacitive pressure sensor suitable for use, in particular, in small capacitive pressure sensor solutions.
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Citations
12 Claims
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1. A method of manufacturing a capacitive pressure sensor out of a silicon wafer element, in which method
the silicon wafer is masked for wet etching, the silicon wafer is etched, the etching mask is removed from the silicon wafer the silicon wafer is attached to a support structure, and the silicon wafer is cut into separate pressure sensor elements, wherein the etching mask (18) is attached over pressure sensor structures, essentially diamond shaped in relation to the direction < -
110>
, to be anisotropically wet etched into a silicon wafer, which is oriented in the direction (100), such that the ends of slots (19) in the etching mask (18) coincide with the corners of the pressure sensor structures to be etched. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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110>
- 9. A capacitive pressure sensor, wherein the silicon crystal planes {111} are located at the corners of the wet etched membrane well of the pressure sensor element.
Specification