Gas injection apparatus for semiconductor processing system
First Claim
1. A gas injection apparatus for injecting a reactive gas into a reaction chamber of a semiconductor processing system, the apparatus comprising:
- an injector disposed to contact an inner surface of a wall of the reaction chamber of the semiconductor processing system, the injector having a plurality of nozzles penetrating it, through which the reactive gas is injected into the reaction chamber;
a gas inlet penetrating through the wall of the reaction chamber;
a manifold disposed between the wall of the reaction chamber and the injector, for supplying the reactive gas flowing through the gas inlet to each of the plurality of nozzles; and
bifurcating gas channels arranged on at least two levels in the manifold, the at least two levels equalizing lengths of gas paths connecting the gas inlet to the plurality of nozzles,wherein all surfaces defining the gas channels have a full extent defined by a surface of the injector and a surface of the reaction chamber.
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Accused Products
Abstract
A gas injection apparatus for injecting a reactive gas into a reaction chamber of a semiconductor processing system includes an injector in contact with an inner surface of a wall of the reaction chamber. The injector has a plurality of nozzles through which the reactive gas is injected into the reaction chamber. A gas inlet penetrates the wall of the reaction chamber. A manifold is disposed between the wall of the reaction chamber and the injector, and supplies the reactive gas flowing through the gas inlet to the nozzles. Gas channels in the manifold are arranged on a plurality of levels to equalize the lengths of gas paths connecting the gas inlet to each of the plurality of nozzles. This configuration makes the flow rate of reactive gas supplied through each of the plurality of nozzles to the reaction chamber uniform.
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Citations
20 Claims
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1. A gas injection apparatus for injecting a reactive gas into a reaction chamber of a semiconductor processing system, the apparatus comprising:
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an injector disposed to contact an inner surface of a wall of the reaction chamber of the semiconductor processing system, the injector having a plurality of nozzles penetrating it, through which the reactive gas is injected into the reaction chamber; a gas inlet penetrating through the wall of the reaction chamber; a manifold disposed between the wall of the reaction chamber and the injector, for supplying the reactive gas flowing through the gas inlet to each of the plurality of nozzles; and bifurcating gas channels arranged on at least two levels in the manifold, the at least two levels equalizing lengths of gas paths connecting the gas inlet to the plurality of nozzles, wherein all surfaces defining the gas channels have a full extent defined by a surface of the injector and a surface of the reaction chamber. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification