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Semiconductor device and manufacturing method thereof

  • US 7,253,485 B2
  • Filed: 08/25/2004
  • Issued: 08/07/2007
  • Est. Priority Date: 09/03/2003
  • Status: Expired due to Fees
First Claim
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1. A MOS semiconductor device comprising:

  • a first and a second MOS semiconductor element device, each of the first and the second MOS semiconductor element devices having a gate electrode including a molybdenum film containing nitrogen, wherein a nitrogen concentration of the first MOS semiconductor element device is different from the nitrogen concentration of the second MOS semiconductor element device; and

    wherein a work function of the gate electrode of each of the first and the second MOS semiconductor element devices is different from each other; and

    wherein the gate electrode of exactly one of the first and the second MOS semiconductor element devices further comprises a titanium nitride film formed on the molybdenum film.

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