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Structure and method to induce strain in a semiconductor device channel with stressed film under the gate

  • US 7,256,081 B2
  • Filed: 02/01/2005
  • Issued: 08/14/2007
  • Est. Priority Date: 02/01/2005
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a CMOS device with a stressed channel, comprising the steps of:

  • forming a silicon island comprising a top surface and multiple sidewalls;

    forming a gate structure comprising at least a gate oxide and a gate stack on the top surface, the gate structure extending beyond a sidewall of the silicon island; and

    surrounding a portion of the silicon island around the multiple sidewalls with a stress film.

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