Substrate manufacturing method and substrate processing apparatus
First Claim
1. A substrate manufacturing method comprising:
- a preparation step of preparing a substrate which has a silicon layer on an insulating layer; and
a thinning step of thinning the silicon layer on the insulting layer to a desired thickness,wherein in the thinning step, a unit thinning step including an oxidation step of oxidizing a surface of the silicon layer by a predetermined thickness, and a removal step of selectively removing silicon oxide formed in the oxidation step is performed not less than twice, andwherein in the oxidation step, the silicon layer is oxidized in an atmosphere with an oxygen content adjusted so as to oxidize the surface of the silicon layer only by the predetermined thickness not more than a thickness of one lattice.
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Accused Products
Abstract
An SOI substrate which has a thick SOI layer is first prepared. Then, the SOI layer is thinned to a target film thickness using as a unit a predetermined thickness not more than that of one lattice. This thinning is performed by repeating a unit thinning step which includes an oxidation step of oxidizing the surface of the SOI layer by the predetermined thickness not more than that of one lattice and a removal step of selectively removing silicon oxide formed by the oxidation. The SOI layer of the SOI substrate is chemically etched by supplying a chemical solution to the SOI layer, and the film thickness of the etched SOI layer is measured. When the measured film thickness of the SOI layer has a predetermined value, a process of chemically etching the SOI layer ends.
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Citations
17 Claims
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1. A substrate manufacturing method comprising:
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a preparation step of preparing a substrate which has a silicon layer on an insulating layer; and a thinning step of thinning the silicon layer on the insulting layer to a desired thickness, wherein in the thinning step, a unit thinning step including an oxidation step of oxidizing a surface of the silicon layer by a predetermined thickness, and a removal step of selectively removing silicon oxide formed in the oxidation step is performed not less than twice, and wherein in the oxidation step, the silicon layer is oxidized in an atmosphere with an oxygen content adjusted so as to oxidize the surface of the silicon layer only by the predetermined thickness not more than a thickness of one lattice. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A substrate manufacturing method comprising:
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a preparation step of preparing a substrate which has a silicon layer on an insulating layer; and a thinning step of thinning the silicon layer on the insulting layer to a desired thickness, wherein in the thinning step, a unit thinning step including an oxidation step of oxidizing a surface of the silicon layer by a predetermined thickness not more than a thickness of substantially one lattice and a removal step of selectively removing silicon oxide formed in the oxidation step is performed at least once.
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14. A substrate manufacturing method comprising:
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a preparation step of preparing a substrate which has a silicon layer on an insulating layer; and a thinning step of thinning the silicon layer on the insulting layer to a desired thickness, wherein in the thinning step, a unit thinning step including an oxidation step of oxidizing a surface of the silicon layer by a predetermined thickness, and a removal step of selectively removing silicon oxide formed in the oxidation step is performed not less than twice, and the method further comprising a determination step of determining a repetition count of the unit thinning step required to thin the silicon layer to the desired thickness, wherein the unit thinning step is repeated in accordance with the repetition count determined in the determination step.
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15. A substrate manufacturing method comprising:
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a preparation step of preparing a substrate which has a silicon layer on an insulating layer; and a thinning step of thinning the silicon layer on the insulting layer to a desired thickness, wherein in the thinning step, a unit thinning step including an oxidation step of oxidizing a surface of the silicon layer by a predetermined thickness, and a removal step of selectively removing silicon oxide formed in the oxidation step is performed not less than twice, and the method further comprising; a measurement step of measuring a thickness of the silicon layer; and a determination step of determining the repetition count of the unit thinning step required to thin the silicon layer to the desired thickness, on the basis of a measurement result in the measurement step, wherein the unit thinning step is repeated in accordance with the repetition count determined in the determination step. - View Dependent Claims (16)
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17. A substrate manufacturing method comprising:
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a preparation step of preparing a substrate which has a silicon layer on an insulating layer; and a thinning step of thinning the silicon layer on the insulting layer to a desired thickness, wherein in the thinning step, a unit thinning step including an oxidation step of oxidizing a surface of the silicon layer by a predetermined thickness, and a removal step of selectively removing silicon oxide formed in the oxidation step is performed not less than twice, and the method further comprising; a measurement step of measuring a thickness of the silicon layer; and a determination step of determining on the basis of a measurement result in the measurement step whether the silicon layer has the desired thickness wherein the unit thinning step is repeated until it is determined in the determination step that the silicon layer has the desired thickness.
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Specification