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Substrate manufacturing method and substrate processing apparatus

  • US 7,256,104 B2
  • Filed: 05/10/2004
  • Issued: 08/14/2007
  • Est. Priority Date: 05/21/2003
  • Status: Expired due to Fees
First Claim
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1. A substrate manufacturing method comprising:

  • a preparation step of preparing a substrate which has a silicon layer on an insulating layer; and

    a thinning step of thinning the silicon layer on the insulting layer to a desired thickness,wherein in the thinning step, a unit thinning step including an oxidation step of oxidizing a surface of the silicon layer by a predetermined thickness, and a removal step of selectively removing silicon oxide formed in the oxidation step is performed not less than twice, andwherein in the oxidation step, the silicon layer is oxidized in an atmosphere with an oxygen content adjusted so as to oxidize the surface of the silicon layer only by the predetermined thickness not more than a thickness of one lattice.

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