Method of double-sided etching

• US 7,256,128 B2
• Filed: 10/12/2004
• Issued: 08/14/2007
• Est. Priority Date: 07/30/2004
• Status: Expired due to Fees

• Current Assignee: TOUCH MICRO-SYSTEM TECHNOLOGY CORP. (Walsin Lihwa Corporation)
• Original Assignee: TOUCH MICRO-SYSTEM TECHNOLOGY CORP. (Walsin Lihwa Corporation)
• Inventors: Yang, Chen-Hsiung
• Primary Examiner(s): CHEN, KIN CHAN
• Application Number:
  US10/711,883
• Publication Number:
  US 20060021965A1
• Time in Patent Office: 1,036 Days
• Field of Search: 438/700, 438/702, 438/694, 438/706, 438/708, 438/709, 438/714, 438/719, 438/723
• US Class Current: 438/700
• CPC Class Codes: B81C 1/00571 Avoid or control under-cutting

Abstract

A wafer, having at least a spindle region and at least two through regions alongside the spindle region, is provided. The wafer in the spindle region is partially removed from the bottom surface. Thereafter, the bottom surface is bonded to a carrier with a bonding layer, and the wafer in the through regions is completely removed from the top surface.

Claims

1. A method of double-sided etching, comprising:

providing a wafer comprising at least a first region and at least a second region, an area of the first region being smaller than an area of the second region, and the second region being partially overlapped with the first region;

performing a first etching process upon a first surface of the wafer to remove the wafer in the first region until a predetermined depth;

bonding the first surface of the wafer to a carrier; and

performing a second etching process upon a second surface of the wafer to remove a portion of the wafer in the second region not overlapped with the first region until the wafer is etched through.

2. The method of claim 1, wherein the first region and the second region define a micro spindle structure.

3. The method of claim 1, wherein the first etching process comprises:

forming a first photo resist pattern exposing the first region on the first surface of the wafer;

etching the wafer not covered by the first photo resist pattern until the predetermined depth, the predetermined depth being larger than a sum of a deviation of the second etching process and a deviation of a thickness of the wafer; and

removing the first photo resist pattern.

4. The method of claim 1, wherein the first surface of the wafer is bonded to the carrier with a bonding layer.

5. The method of claim 1, wherein the second etching process comprises:

forming a second photo resist pattern exposing the second region not overlapped with the first region;

etching through the wafer not covered by the second photo resist pattern until the bonding layer; and

removing the second photo resist pattern.

6. The method of claim 1, further comprising performing the step of removing the bonding layer after the second etching process.

7. A method of forming a micro spindle, comprising:

providing a wafer comprising at least a spindle region and two through regions, the two through regions being respectively positioned on both sides of the spindle region;

partially removing the wafer in the spindle region from a first surface of the wafer; and

removing the wafer in the two through regions from a second surface of the wafer until the wafer is removed through to the first surface, wherein the first surface of the wafer is bonded to a carrier with a bonding layer while removing the wafer in the two through regions.

8. The method of claim 7, wherein the wafer in the spindle region is removed by etching.

9. The method of claim 7, wherein the wafer in the two through regions are removed by etching.

10. The method of claim 7, further comprising the step of removing the bonding layer after the wafer in the two through regions is removed.