Method for fabricating semiconductor device

• US 7,256,129 B2
• Filed: 12/08/2005
• Issued: 08/14/2007
• Est. Priority Date: 06/28/2005
• Status: Expired due to Fees

• Current Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Nam, Ki-Won, Cheong, Jung-Taik
• Primary Examiner(s): Tran; Binh X.
• Application Number:
  US11/296,346
• Publication Number:
  US 20060292882A1
• Time in Patent Office: 614 Days
• Field of Search: 438/708, 438/709, 438/719, 438/736
• US Class Current: 438/708
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/32137 of silicon-containing layers

Abstract

A method for fabricating a semiconductor device is provided. The method includes: forming an inter-layer insulation layer on a substrate; forming a hard mask layer on the inter-layer insulation layer; etching the hard mask layer using a contact mask; and etching the inter-layer insulation layer using the hard mask layer as an etch barrier, thereby obtaining an opening wherein the etching of the hard mask layer and the etching of the inter-layer insulation layer are performed in one etch chamber.

Claims

1. A method for fabricating a semiconductor device, comprising:

forming an inter-layer insulation layer on a substrate;

forming a hard mask layer on the inter-layer insulation layer;

etching the hard mask layer using a contact mask; and

etching the inter-layer insulation layer using the hard mask layer as an etch barrier, thereby obtaining an opening,

wherein the etching of the hard mask layer and the etching of the inter-layer insulation layer are performed in one etch chamber and etching of the inter-layer insulation layer is performed by utilizing C₄F₈ gas, H₂F₂ gas, oxygen (O₂) gas, and argon (Ar) gas.

2. The method of claim 1, wherein the etch chamber is used to etch an oxide layer.

3. The method of claim 1, wherein the hard mask layer includes polysilicon.

4. The method of claim 1, wherein the etching of the hard mask layer maintains an etch rate of approximately 1,000 Å

per minute.

5. The method of claim 1, wherein the etching of the inter-layer insulation layer using the etched hard mask layer as the etch barrier in the same etch chamber where the hard mask layer is etched is performed at an etch chamber pressure ranging from approximately 20 mtorr to approximately 100 mtorr.

6. The method of claim 1, wherein the etching of the inter-layer insulation layer using the etched hard mask layer as the etch barrier in the same etch chamber where the hard mask layer is etched is performed with a top power ranging from approximately 1,000 W to approximately 3,000 W, and a bottom power ranging from approximately 1,000 W to approximately 2,000 W.

7. The method of claim 1, wherein the C₄F₈ gas flows at a quantity ranging from approximately 10 sccm to approximately 40 sccm.

8. The method of claim 1, wherein the H₂F₂ gas flows at a quantity ranging from approximately 10 sccm to approximately 100 sccm.

9. The method of claim 1, wherein the O₂ gas flows at a quantity ranging from approximately 5 sccm to approximately 30 sccm.

10. The method of claim 1, wherein the Ar gas flows at a quantity ranging from approximately 100 sccm to approximately 1,000 sccm.

11. The method of claim 1, wherein the hard mask layer is etched using a mixed etch gas including a fluorine-based gas and oxygen gas.

12. The method of claim 11, wherein the oxygen gas flows at a quantity of flow ranging from approximately 10 sccm to approximately 50 sccm, and the fluorine-based gas flows at a quantity of flow ranging from approximately 15 sccm to approximately 75 sccm.

13. The method of claim 11, wherein the etching of the hard mask layer is performed at a chamber pressure ranging from approximately 40 mtorr to approximately 100 mtorr.

14. The method of claim 11, wherein the etching of the hard mask layer is performed with a radio frequency (RE) power ranging from approximately 200 W to approximately 1,000 W.

15. The method of claim 11, wherein the etching of the hard mask layer is performed at a temperature ranging from approximately −

20°

C. to approximately 20°

C.