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Method for forming a metal oxide film

  • US 7,256,144 B2
  • Filed: 03/24/2004
  • Issued: 08/14/2007
  • Est. Priority Date: 03/27/2003
  • Status: Expired due to Fees
First Claim
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1. A method for forming a semiconductor device comprising the steps of:

  • depositing a monoatomic film including a metal on a base by using a metal source including a compound containing said metal and no oxygen;

    depositing a metal oxide film including oxide of said metal on said monoatomic film by using a CVD technique; and

    before said monoatomic film depositing step, the step of supplying oxidizing gas onto a surface of said base.

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