Method for treating a wafer edge

• US 7,256,148 B2
• Filed: 05/12/2005
• Issued: 08/14/2007
• Est. Priority Date: 05/12/2005
• Status: Expired due to Fees

• Current Assignee: Infineon Technologies AG, International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Knorr, Andreas, Kastenmeier, Bernd E.
• Primary Examiner(s): Lebentritt; Michael
• Assistant Examiner(s): Lee; Cheung
• Application Number:
  US10/908,441
• Publication Number:
  US 20060258177A1
• Time in Patent Office: 824 Days
• Field of Search: 438/457, 438/475, 438/477, 438/513
• US Class Current: 438/798
• CPC Class Codes: H01L 21/02046 Dry cleaning only H01L21/02085 takes precedence
• CPC Class Codes: H01L 21/02087 Cleaning of wafer edges
• CPC Class Codes: H01L 21/02096 only mechanical cleaning
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/67069 for drying etching

Abstract

A method for treating an edge portion of a wafer with a plasma or select chemical formulation in order to enhance adhesion characteristics and inhibit delamination of a layer of material from the wafer surface only on the edge portion that is being treated. Alternatively, the method may be utilized to effectuate a cleaning of an edge portion of a wafer.

Claims

1. A method for treating an outside edge region of a wafer, comprising:

providing a stack of material covering a wafer surface;

removing the stack of material along an outer edge region of the wafer to expose a top of the wafer surface along the outer edge region;

applying a protective film over a central region of the wafer such that only the outer edge region of the wafer surface and an outer edge region of the stack of material on the wafer are exposed; and

applying a plasma treatment to the wafer, wherein the protective film protects a central portion of the stack of material and limits treatment to the outer edge region of both the wafer surface and stack of material on the wafer.

2. The method of claim 1, comprising the further step of removing the protective film.

3. The method of claim 1, wherein the stack of material comprises a dielectric thin film.

4. The method of claim 1, wherein the plasma treatment causes the outer edge region of both the wafer surface and stack of material on the wafer to densify.

5. The method of claim 1, wherein the plasma treatment enhances adhesion characteristics and inhibits delamination of at least one layer of material situated on a wafer surface.

6. The method of claim 1, wherein the plasma treatment consists of a treatment selected from the group consisting of:

cleaning, changing of the chemical composition of the material, and removal of material.

7. A method for treating an outside edge region of a wafer, comprising:

providing a wafer that includes a stack of material situated on a wafer surface, wherein the stack of material is recessed back from an edge of the wafer such that an outer edge region including a top of the wafer surface is left exposed;

providing a plasma delivery system that limits a plasma exposure to both the outer edge region of the wafer surface and an outer edge region of the stack of material on the wafer surface; and

applying a plasma treatment to the outer edge region of both the wafer and stack of material, wherein a central portion of the stack of material situated on the wafer is not exposed to the plasma treatment.

8. The method of claim 7, comprising the further step of rotating the wafer in order to expose an entire outer circumferential region of both the wafer and stack of material situated on the wafer to the plasma treatment.

9. The method of claim 7, wherein the plasma delivery system comprises a ring-shaped electrode that can be placed above an entire outer circumferential region of both the wafer and stack of material situated on the wafer.

10. The method of claim 7, wherein the stack of material comprises a dielectric thin film.

11. The method of claim 7, wherein the plasma treatment causes the outer edge region of both the wafer and stack of material on the wafer surface to densify.

12. The method of claim 7, wherein the plasma treatment enhances adhesion characteristics and inhibits delamination of the stack of material.

13. The method of claim 7, wherein the plasma treatment consists of a treatment selected from the group consisting of:

cleaning, changing of the chemical composition of the material, and removal of material.