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Memory cell with buffered-layer

  • US 7,256,429 B2
  • Filed: 12/21/2005
  • Issued: 08/14/2007
  • Est. Priority Date: 01/12/2004
  • Status: Expired due to Term
First Claim
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1. A method for forming an RRAM buffered-layer memory cell, the method comprising:

  • forming a CMOS transistor with source and drain active regions;

    forming a metal interlevel interconnect to a transistor active region;

    forming a bottom electrode overlying the interlevel interconnect;

    forming a colossal magnetoresistance (CMR) memory film overlying the bottom electrode;

    forming a memory-stable semiconductor buffer layer overlying the memory film; and

    ,forming a top electrode overlying the semiconductor buffer layer.

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