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Semiconductor device with a barrier layer and a metal layer

  • US 7,256,497 B2
  • Filed: 02/10/2005
  • Issued: 08/14/2007
  • Est. Priority Date: 02/17/2004
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a semiconductor die having a via hole extending from a back surface of the semiconductor die to a top surface of the semiconductor die;

    a pad electrode layer covering the via hole at the top surface of the semiconductor die and comprising a first barrier layer and a metal layer, the first barrier layer being disposed closer to the top surface of the semiconductor die than the metal layer;

    a supporting member attached to the top surface of the semiconductor die;

    a wiring layer disposed on the back surface of the semiconductor die and extending into the via hole to be in contact with the first barrier layer.

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