Non-volatile multi-level semiconductor flash memory device and method of driving same
First Claim
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1. A nonvolatile memory comprising:
- a plurality of memory cells,a plurality of word lines, each of which couples to corresponding ones of said memory cells,wherein said nonvolatile memory is capable of receiving a plurality of commands which include a read command accompanied with a read address and a discriminating address discriminating bits in the memory cells,wherein said nonvolatile memory is adapted to perform either a first read operation or a second read operation according to the discriminating address,wherein, in the first read operation, the nonvolatile memory is adapted to output the data by selecting one of the plurality of word lines once, andwherein, in the second read operation, the nonvolatile memory is adapted to output the data by selecting one of the plurality of word lines twice.
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Abstract
In a nonvolatile semiconductor memory device in which a plurality of threshold values are set to store multi-level data in a memory cell, bits of multi-bit data are separately written into a memory cell according to an address signal or a control signal to effect the reading and erasing. Concretely, the memory array is so constituted that it can be accessed by three-dimensional address of X, Y and Z, and multi-bit data in the memory cell is discriminated by the Z-address.
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4 Claims
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1. A nonvolatile memory comprising:
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a plurality of memory cells, a plurality of word lines, each of which couples to corresponding ones of said memory cells, wherein said nonvolatile memory is capable of receiving a plurality of commands which include a read command accompanied with a read address and a discriminating address discriminating bits in the memory cells, wherein said nonvolatile memory is adapted to perform either a first read operation or a second read operation according to the discriminating address, wherein, in the first read operation, the nonvolatile memory is adapted to output the data by selecting one of the plurality of word lines once, and wherein, in the second read operation, the nonvolatile memory is adapted to output the data by selecting one of the plurality of word lines twice. - View Dependent Claims (2, 3, 4)
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Specification