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Non-volatile multi-level semiconductor flash memory device and method of driving same

  • US 7,257,026 B2
  • Filed: 05/05/2006
  • Issued: 08/14/2007
  • Est. Priority Date: 07/10/1996
  • Status: Expired due to Fees
First Claim
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1. A nonvolatile memory comprising:

  • a plurality of memory cells,a plurality of word lines, each of which couples to corresponding ones of said memory cells,wherein said nonvolatile memory is capable of receiving a plurality of commands which include a read command accompanied with a read address and a discriminating address discriminating bits in the memory cells,wherein said nonvolatile memory is adapted to perform either a first read operation or a second read operation according to the discriminating address,wherein, in the first read operation, the nonvolatile memory is adapted to output the data by selecting one of the plurality of word lines once, andwherein, in the second read operation, the nonvolatile memory is adapted to output the data by selecting one of the plurality of word lines twice.

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