Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
First Claim
1. A vertical cavity surface emitting laser (VCSEL) comprising:
- an active region having a first edge and a second edge, said active region further comprising at least one quantum well and at least one multi-component barrier, said at least one multi-component barrier layer disposed next to said at least one quantum well, wherein a portion of said at least one multi-component barrier layer comprises a reduced barrier energy to carrier flow near said at least one quantum well, thereby enhancing the speed and efficiency of the device; and
first and second confinement regions each comprising at least one confinement layer, wherein said first confinement region is disposed next to and outside of said first edge of said active region and said second confinement region is disposed next to and outside of said second edge of said active region.
4 Assignments
0 Petitions
Accused Products
Abstract
Multi-component barrier layers include formation of a GaAs layer and at least one adjacent GaAsN layer. The resulting multi-component barrier layer shape can provide enhanced (extended) offset for capture of holes and enhanced electrons. Other benefits include: a small amount of strain compensation; poorer spatial overlap of higher confined states reducing parasitics at high bias, with some small effect on the lowest confined states. Quantum wells and associated barriers layers can be grown with combinations of gallium, (Ga), arsenic, (As), nitrogen (N), aluminum (Al), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., with wavelengths over 1200 nm. Layers of strained quantum well material can also be supported by mechanical stabilizers.
-
Citations
23 Claims
-
1. A vertical cavity surface emitting laser (VCSEL) comprising:
-
an active region having a first edge and a second edge, said active region further comprising at least one quantum well and at least one multi-component barrier, said at least one multi-component barrier layer disposed next to said at least one quantum well, wherein a portion of said at least one multi-component barrier layer comprises a reduced barrier energy to carrier flow near said at least one quantum well, thereby enhancing the speed and efficiency of the device; and first and second confinement regions each comprising at least one confinement layer, wherein said first confinement region is disposed next to and outside of said first edge of said active region and said second confinement region is disposed next to and outside of said second edge of said active region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
-
-
14. A vertical cavity surface emitting laser (VCSEL), comprising:
-
an active region having a first edge and a second edge, said active region further comprising at least one quantum well containing nitrogen and at least one multi-component barrier, said at least one multi-component barrier layer disposed next to said at least one quantum well, said multi-component barrier layer further comprising a layer of GaAs disposed next to a layer of GaAsN, wherein a portion of said at least one multi-component barrier layer comprises a reduced barrier energy to carrier flow near said at least one quantum well, thereby enhancing the speed and efficiency of the device; and first and second confinement regions further comprising at least one confinement layer, wherein said first confinement region is disposed next to and outside of said first edge of said active region and said second confinement region is disposed next to and outside of said second edge of said active region. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21)
-
-
22. A vertical cavity surface emitting laser (VCSEL) comprising:
-
an active region having a first edge and a second edge, said active region further comprising at least one quantum well containing nitrogen and at least one multi-component barrier, said at least one multi-component barrier layer disposed next to said at least one quantum well, said multi-component barrier layer further comprising a layer of GaAs disposed next to a layer of GaAsN, wherein a portion of said at least one multi-component barrier layer comprises a reduced barrier energy to carrier flow near said at least one quantum well, thereby enhancing the speed and efficiency of the device; and first and second confinement regions further comprising at least one confinement layer including Al; and an extended barrier layer disposed between said first confinement regions and said active region. - View Dependent Claims (23)
-
Specification