Integrated monolithic tri-axial micromachined accelerometer

• US 7,258,012 B2
• Filed: 02/21/2006
• Issued: 08/21/2007
• Est. Priority Date: 02/24/2003
• Status: Expired due to Fees

• Current Assignee: University of Florida Research Foundation, Incorporated (State University System of Florida)
• Original Assignee: University of Florida Research Foundation, Incorporated (State University System of Florida)
• Inventors: Xie, Huikai
• Primary Examiner(s): Williams; Hezron
• Assistant Examiner(s): Shah; Samir M.
• Application Number:
  US11/363,293
• Publication Number:
  US 20060260401A1
• Time in Patent Office: 546 Days
• Field of Search: 735/10, 735/143.2
• US Class Current: 73/514.32
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 3/0062 Devices moving in two or more dimensions, i.e. having special features which allow movement in more than one dimension
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 2203/0728 Pre-CMOS, i.e. forming the micromechanical structure before the CMOS circuit
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 15/18 in two or more dimensions
• CPC Class Codes: G01P 2015/082 for two degrees of freedom of movement of a single mass
• CPC Class Codes: H03H 9/02338 Suspension means

Abstract

A monolithic integrated 3-axis accelerometer chip includes a single crystal substrate, the substrate including at least one single crystal membrane layer portion. A single sensor microstructure made from the single crystal membrane senses acceleration in each of the three orthogonal directions. At least one electronic circuit can also be disposed on the chip, such as a circuit for driving, detecting, controlling and signal processing.

Claims

1. A monolithic integrated 3-axis accelerometer chip, comprising:

a single crystal substrate, said single crystal substrate including at least one single crystal membrane layer portion;

a single microstructure formed using said membrane layer, said single microstructure capacitively sensing and providing acceleration data for all three orthogonal axes, wherein said single microstructure comprises a plurality of comb finger sets including at least one comb finger set for motion sensing in each of said three orthogonal axes, said comb finger sets comprising a plurality of comb fingers, said comb finger sets for each of said three orthogonal axes include said membrane layer, and

at least one electronic circuit formed on said single crystal substrate for processing said acceleration data.

2. The accelerometer of claim 1, wherein said single crystal substrate is preferably single crystal silicon, and said electronic circuit is preferably a CMOS circuit.

3. The accelerometer of claim 1, wherein said electronic circuit comprises at least one selected from the group consisting of a pre-amplifier, a demodulator, a low-pass filter, an A/D converter and a DSP.

4. The accelerometer of claim 1, wherein said accelerometer includes a proof mass and at least one flexure, at least a portion of said comb fingers being disposed on said proof mass, said flexure mechanically connecting said proof mass and said membrane layer.

5. The accelerometer of claim 1, wherein said plurality of comb finger sets comprise a metal/dielectric composite thin film layer stack disposed on said membrane layer.

6. The accelerometer of claim 5, wherein said metal in said metal/dielectric stack is electrically isolated from said membrane layer.

7. The accelerometer of claim 5, wherein said metal in said metal/dielectric stack is electrically connected to said membrane layer, said membrane layer comprising at least one electrode of said structure for differential capacitive sensing.

8. The accelerometer of claim 5, wherein said metal in said metal/dielectric stack is disposed in sidewalls of said metal/dielectric stack.

9. The accelerometer of claim 5, wherein a cross sectional area of said membrane layer is less than a cross sectional area of said metal/dielectric stack.

10. The accelerometer of claim 9, wherein said cross sectional area of said membrane layer is less than a cross sectional area of said metal/dielectric stack for said comb fingers including comb fingers which provide z-axis sensing.

11. The accelerometer of claim 1, wherein said accelerometer includes a rigid frame disposed between structure for x-y sensing and structure for z-sensing.

12. The accelerometer of claim 11, wherein said structure for z-sensing is disposed inside said rigid frame, wherein said structure for z-sensing includes a proof mass disposed inside said rigid frame by at least one element for decoupling z-sensing from x-y sensing, wherein said frame plus said z-sensing structure is an effective proof mass for said structure for x-y sensing.