Method of forming protective structure for active matrix triode field emission device

• US 7,259,029 B2
• Filed: 05/27/2005
• Issued: 08/21/2007
• Est. Priority Date: 04/13/2005
• Status: Expired due to Fees

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: Tseng, Huai-Yuan, Lee, Chun-Tao
• Primary Examiner(s): NGUYEN, THANH T
• Application Number:
  US11/138,285
• Publication Number:
  US 20060234406A1
• Time in Patent Office: 816 Days
• Field of Search: 438/20, 438/237
• US Class Current: 438/20
• CPC Class Codes: H01L 27/0255 using diodes as protective elements
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/12 characterised by the materials of which they are formed
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile

Abstract

A method for forming a protective structure of active matrix triode field emission device is provided. The method comprises the steps of forming a silicon active region; depositing a gate oxide layer over the silicon active region; depositing and patterning a first metal layer over the gate oxide layer; doping impurities into portions of the said silicon active region to form a source/drain in a first conductive type and simultaneously to form a diode having a terminal in the first conductive type; forming ILD layer over the first metal layer and forming a plurality of contact holes thereon; depositing and patterning a second metal layer; forming a passivation layer over the second metal layer and forming a plurality of via holes thereon, depositing and patterning a third metal layer to form a gate and a tip structure.

Claims

1. A method for manufacturing a protective structure of active matrix triode filed emission device, comprising the steps of:

forming a silicon active region;

depositing a gate oxide layer over said silicon active region;

depositing and patterning a first metal layer over said gate oxide layer;

doping impurities into portions of said silicon active region to form a source/drain in a first conductive type and simultaneously to form a diode having a terminal in said first conductive type;

forming an inter layer dielectric (ILD) layer over said first metal layer and forming a plurality of contact holes thereon;

depositing and patterning a second metal layer;

forming a passivation layer over said second metal layer and forming a plurality of via holes thereon; and

depositing and patterning a third metal layer to form a gate and a tip structure while connecting said gate to one terminal of said diode and connecting said tip structure said source/drain through said contact holes and said via holes.

2. The method recited in claim 1, wherein said diode is a PI diode consisting of an intrinsic terminal connecting to said gate and a P-type terminal being said source/drain.

3. The method recited in claim 1, wherein said diode is an IN diode consisting of a N-type terminal connecting to said gate and an intrinsic terminal.

4. The method recited in claim 1, wherein said diode is an N⁻

N⁺ diode consisting of a N⁺ terminal connecting to said gate and a N³¹ terminal.

5. The method recited in claim 1, wherein the tip structure is made of nano carbon tubes.