Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices

• US 7,259,030 B2
• Filed: 01/04/2005
• Issued: 08/21/2007
• Est. Priority Date: 03/29/2004
• Status: Expired due to Fees

• Current Assignee: Articulated Technologies, LLC
• Original Assignee: Articulated Technologies, LLC
• Inventors: Nelson, Gregory Victor, Daniels, John James
• Primary Examiner(s): Dang; Phuc T.
• Application Number:
  US11/029,129
• Publication Number:
  US 20050214963A1
• Time in Patent Office: 959 Days
• Field of Search: 438/22, 438/46, 438/455, 438/604
• US Class Current: 438/22
• CPC Class Codes: H01L 2224/29 of an individual layer connector
• CPC Class Codes: H01L 2224/29099 Material
• CPC Class Codes: H01L 2224/29101 the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/2919 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29199 Material of the matrix
• CPC Class Codes: H01L 2224/2929 with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29298 Fillers
• CPC Class Codes: H01L 2224/29299 Base material
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/32257 the layer connector connecting to a bonding area disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/75822 Rotational mechanism
• CPC Class Codes: H01L 2224/83 using a layer connector
• CPC Class Codes: H01L 2224/83192 wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/8388 Hardening the adhesive by cooling, e.g. for thermoplastics or hot-melt adhesives
• CPC Class Codes: H01L 2224/95 at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
• CPC Class Codes: H01L 2224/95145 Electrostatic alignment, i.e. polarity alignment with Coulomb charges
• CPC Class Codes: H01L 24/29 of an individual layer connector
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/75 : Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/95 : at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
• CPC Class Codes: H01L 25/0753 : the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00013 : Fully indexed content
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01012 : Magnesium [Mg]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01016 : Sulfur [S]
• CPC Class Codes: H01L 2924/0102 : Calcium [Ca]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01025 : Manganese [Mn]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01032 : Germanium [Ge]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01087 : Francium [Fr]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/09701 : Low temperature co-fired ceramic [LTCC]
• CPC Class Codes: H01L 2924/10336 : Aluminium gallium arsenide [AlGaAs]
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 31/022425 : for solar cells
• CPC Class Codes: H01L 31/048 : Encapsulation of modules
• CPC Class Codes: H01L 31/1876 : Particular processes or apparatus for batch treatment of the devices
• CPC Class Codes: H01L 31/188 : Apparatus specially adapted for automatic interconnection of solar cells in a module
• CPC Class Codes: H01L 33/52 : Encapsulations
• CPC Class Codes: Y02E 10/50 : Photovoltaic [PV] energy
• CPC Class Codes: Y02P 70/50 : Manufacturing or production processes characterised by the final manufactured product

Abstract

A method of making a light active sheet. A bottom substrate having an electrically conductive surface is provided. A hotmelt adhesive sheet is provided. Light active semiconductor elements, such as LED die, are embedded in the hotmelt adhesive sheet. The LED die each have a top electrode and a bottom electrode. A top transparent substrate is provided having a transparent conductive layer. The hotmelt adhesive sheet with the embedded LED die is inserted between the electrically conductive surface and the transparent conductive layer to form a lamination. The lamination is run through a heated pressure roller system to melt the hotmelt adhesive sheet and electrically insulate and bind the top substrate to the bottom substrate. As the hotmelt sheet is softened, the LED die breakthrough so that the top electrode comes into electrical contact with the transparent conductive layer of the top substrate and the bottom electrode comes into electrical contact with the electrically conductive surface of the bottom substrate. Thus, the p and n sides of each LED die are automatically connected to the top conductive layer and the bottom conductive surface. Each LED die is encapsulated and secured between the substrates in the flexible, hotmelt adhesive sheet layer. The bottom substrate, the hotmelt adhesive (with the embedded LED die) and the top substrate can be provided as rolls of material. The rolls are brought together in a continuous roll fabrication process, resulting in a flexible sheet of lighting material.

Claims

1. A method of making a light active sheet, comprising the steps of:

Providing a bottom substrate having an electrically conductive surface;

Providing an electrically insulative adhesive;

Fixing light active semiconductor elements to the electrically insulative adhesive, said light active semiconductor elements each having an n-side and a p-side;

Providing a top transparent substrate having a transparent conductive layer disposed thereon;

Inserting the electrically insulative adhesive having the light active semiconductor elements fixed thereon between the electrically conductive surface and the transparent conductive layer to form a lamination; and

Activating the electrically insulative adhesive to electrically insulate and bind the top substrate to the bottom substrate so that one of said n-side or said p-side of the light active semiconductor elements is in electrical communication with the transparent conductive layer of the top substrate and so that the other of said n-side or said p-side of each said light active semiconductor element is in electrical communication with the electrically conductive surface of the bottom substrate to form a light active device.

2. A method of making a light active sheet according to claim 1;

wherein the bottom substrate, the electrically insulative adhesive and the top substrate are provided as respective rolls of material; and

the step of inserting comprising bringing the bottom substrate, the electrically insulative adhesive and the top substrate together in a continuous roll fabrication process.

3. A method of making a light active sheet according to claim 1;

wherein the electrically insulative adhesive comprises a hotmelt material, and the step of activating comprises applying heat and pressure to the lamination to soften the hotmelt material.

4. A method of making a light active sheet according to claim 3;

wherein at least one of the heat and pressure are provided by rollers.

5. A method of making a light active sheet according to claim 1;

wherein the step of activating comprises at least one of solvent action, catalytic reaction and radiation curing of the electrically insulative adhesive.

6. A method of making a light active sheet according to claim 1;

wherein the light active semiconductor elements are light emitting diode die.

7. A method of making a light active sheet according to claim 1;

wherein the light active semiconductor elements are light-to-energy devices.

8. A method of making a light active sheet according to claim 1;

wherein a first portion of the light active semiconductor elements emit a first wavelength of radiation and second portion of the light active semiconductor elements emit a second wavelength of radiation.

9. A method of making a light active sheet according to claim 1;

wherein the electrically insulative adhesive comprises a hotmelt sheet; and

the step of fixing comprises embedding the light active semiconductor elements into the hotmelt sheet before the step of inserting.

10. A method of making a light active sheet according to claim 7;

wherein the step of fixing comprises the step of forming a predetermined pattern of the light active semiconductor elements.

11. A method of making a light active sheet according to claim 8;

wherein the step of forming a predetermined pattern of the light active semiconductor elements comprises electrostatically attracting a plurality of said light active semiconductor elements on a transfer member and transferring the predetermined pattern onto the insulative adhesive.

12. A method of making a light active sheet according to claim 8;

wherein the step of forming a predetermined pattern of the light active semiconductor elements comprises magnetically attracting a plurality of said light active semiconductor elements on a transfer member and transferring the predetermined pattern onto the insulative adhesive.

13. A method of making a light active sheet according to claim 8;

wherein the step of forming a predetermined pattern of the light active semiconductor elements comprises electrostatically attracting a plurality of said light active semiconductor elements on a transfer member and transferring the predetermined pattern onto the insulative adhesive.

14. A method of making a light active sheet according to claim 1;

wherein the transparent conductive layer is formed by printing a transparent conductive material to form conductive light transmissive connecting lands, each said land for connecting with a respective light active semiconductor.

15. A method of making a light active sheet according to claim 14;

further comprising a relatively higher conducting line pattern formed on at least one of the top substrate and the bottom substrate for providing a relatively lower path of resistance from a power supply source to each said light active semiconductor element.

16. A method of making a light active sheet according to claim 1;

wherein the electrically conductive surface and the electrically conductive pattern comprise a respective x and y wiring grid for selectively addressing individual said light active semiconductor elements for forming a display.

17. A method of making a light active sheet according to claim 1;

further comprising the step of providing a phosphor in the lamination, said phosphor being optically stimulated by a radiation emission of a first wavelength from the light active semiconductor element to emit light of a second wavelength.

18. A method of making an electronically active sheet, comprising the steps of:

Providing a bottom planar substrate having an electrically conductive surface;

Providing an adhesive;

Fixing at least one semiconductor element to the adhesive, said semiconductor element having a top conductor and a bottom conductor;

Providing a top substrate having an electrically conductive pattern disposed thereon;

Inserting the adhesive with said semiconductor element fixed thereto between the electrically conductive surface and the electrically conductive pattern to form a lamination; and

Activating the adhesive to bind the top substrate to the bottom substrate so that one of said top conductor and said bottom conductor of said semiconductor element is automatically brought into and maintained in electrical communication with the electrically conductive pattern of the top substrate and so that the other of said top conductor and said bottom conductor of each said semiconductor element is automatically brought into and maintained in electrical communication with the electrically conductive surface of the bottom substrate to form an electronically active sheet.

19. A method of making an electronically active sheet according to claim 18;

wherein the bottom substrate, the adhesive and the top substrate are provided as respective rolls of material; and

the step of inserting comprising bringing the bottom substrate, the adhesive and the top substrate together in a continuous roll fabrication process.

20. A method of making an electronically active sheet according to claim 18;

wherein the adhesive comprises a hotmelt sheet material, and the step of activating comprises applying heat and pressure to the lamination to soften the hotmelt material.

21. A method of making an electronically active sheet according to claim 20;

wherein at least one of the heat and pressure are provided by rollers.

22. A method of making an electronically active sheet according to claim 18;

wherein the step of activating comprises at least one of solvent action, catalytic reaction and radiation curing of the adhesive.

23. A method of making an electronically active sheet according to claim 18;

wherein the adhesive comprises a hotmelt sheet; and

the step of fixing comprises embedding the semiconductor element into the hotmelt sheet before the step of inserting.

24. A method of making an electronically active sheet according to claim 23;

wherein the step of fixing comprises the step of forming a predetermined pattern of the semiconductor elements.

25. A method of making an electronically active sheet according to claim 24;

wherein the step of forming a predetermined pattern of the semiconductor elements comprises electrostatically attracting a plurality of said semiconductor elements on a transfer member and transferring the predetermined pattern onto the adhesive.

26. A method of making an electronically active sheet according to claim 24;

wherein the step of forming a predetermined pattern of the semiconductor elements comprises magnetically attracting a plurality of said semiconductor elements on a transfer member and transferring the predetermined pattern onto the adhesive.

27. A method of making an electronically active sheet according to claim 24;

wherein the step of forming a predetermined pattern of the semiconductor elements comprises using a pick and place device.

28. A method of making an encapsulated semiconductor device, comprising the steps of:

Providing a bottom substrate having an electrically conductive surface;

Providing an adhesive layer on the electrically conductive surface;

Fixing a predetermined pattern of semiconductor elements to the adhesive, said semiconductor elements each having a top device conductor and a bottom device conductor;

Providing a top substrate having a conductive pattern disposed thereon to form a lamination so that the need for metallic insulates and binds the top substrate to the bottom substrate so that one of said top device conductor and bottom device conductor of the semiconductor elements is in electrical communication with the conductive pattern of the top substrate and so that the other of said top device conductor and bottom device conductor of each said semiconductor element is in electrical communication with the electrically conductive layer of the bottom substrate.

29. A method for making an encapsulated semiconductor device according to claim 28;

wherein at least one said semiconductor elements includes a middle conductor region between the top conductor and the bottom conductor; and

wherein the adhesive comprises at least one electrically conductive portion for making an electrical connection with the middle conductor region.

30. A method of making an encapsulated semiconductor device according to claim 28;

wherein the bottom substrate, the adhesive and the top substrate are provided as respective rolls of material; and

the step of inserting comprising bringing the bottom substrate, the electrically adhesive and the top substrate together in a continuous roll fabrication process.

31. A method of making an encapsulated semiconductor device according to claim 28;

wherein the adhesive includes a hotmelt sheet material, and the step of activating comprises applying heat and pressure to the lamination to soften the hotmelt material.

32. A method of making an encapsulated semiconductor device according to claim 31;

wherein at least one of the heat and pressure are provided by rollers.

33. A method of making an encapsulated semiconductor device according to claim 28;

wherein the adhesive includes a hotmelt sheet; and

the step of fixing comprises embedding the semiconductor element into the hotmelt sheet before the step of inserting.

34. A method of making an encapsulated semiconductor device according to claim 33;

wherein the step of fixing comprises the step of forming a predetermined pattern of the semiconductor elements.

35. A method of making an encapsulated semiconductor device according to claim 34;

wherein the step of forming a predetermined pattern of the semiconductor elements comprises electrostatically attracting a plurality of said semiconductor elements on a transfer member and transferring the predetermined pattern onto the adhesive.

36. A method of making an encapsulated semiconductor device according to claim 34;

wherein the step of forming a predetermined pattern of the semiconductor elements comprises magnetically attracting a plurality of said semiconductor elements on a transfer member and transferring the predetermined pattern onto the adhesive.

37. A method of making an encapsulated semiconductor device according to claim 34;

wherein the step of forming the predetermined pattern of the semiconductor elements comprises using a pick and place device.

38. A method of making an encapsulated semiconductor device according to claim 34;

wherein the step of forming the predetermined pattern comprises transferring said semiconductor elements from a relatively lower tack adhesive to a relatively higher tack adhesive.