Methods of forming thin-film transistor display devices
First Claim
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1. A method of forming thin-film transistor display device, comprising the steps of:
- forming a gate line and a gate electrode on a substrate;
forming a gate insulating layer on the gate line and the gate electrode;
forming a semiconductor layer on the gate insulating layer;
forming a data line including a source electrode and a drain electrode on the semiconductor layer, the data line including the source electrode and the drain electrode comprising a composite of a lower layer of a first metal and an upper layer of a second metal different from the first metal;
forming a pixel electrode electrically coupled to the drain electrode;
forming a gate pad electrically connected to an end portion of the gate line; and
forming a data pad that is electrically connected to an end portion of the data line and contacts an upper surface of the lower layer.
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Abstract
Methods of forming thin-film transistor display devices including forming a gate line and a gate electrode on a face of a substrate and forming a semiconductor layer that is insulated from the gate line. A data line and a source/drain electrode are formed on the semiconductor layer. The data line and the source/drain electrode are formed as composites of at least two different metal conductive layers. A transparent pixel electrode is formed that is electrically coupled to the drain electrode.
19 Citations
15 Claims
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1. A method of forming thin-film transistor display device, comprising the steps of:
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forming a gate line and a gate electrode on a substrate; forming a gate insulating layer on the gate line and the gate electrode; forming a semiconductor layer on the gate insulating layer; forming a data line including a source electrode and a drain electrode on the semiconductor layer, the data line including the source electrode and the drain electrode comprising a composite of a lower layer of a first metal and an upper layer of a second metal different from the first metal; forming a pixel electrode electrically coupled to the drain electrode; forming a gate pad electrically connected to an end portion of the gate line; and forming a data pad that is electrically connected to an end portion of the data line and contacts an upper surface of the lower layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method of forming thin-film transistor display device, comprising the steps of:
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forming a gate electrode on the substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer on the gate insulating layer; forming a data line comprising a lower layer of a first metal and an upper layer of a second metal different from the first metal concurrently with forming a source electrode comprising a lower layer of a first metal and an upper layer of the second metal on a first portion of the semiconductor layer; forming a drain electrode comprising a lower layer of the first metal and an upper layer of the second metal, on a second portion of the semiconductor layer; forming a pixel electrode that is electrically coupled to the drain electrode and contacts an upper surface of the lower layer of the drain electrode; and forming a data pad that is electrically connected to an end portion of the data line and contacts an upper surface of the lower layer of the data line.
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Specification