Glass-type planar substrate, use thereof, and method for the production thereof
First Claim
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1. A method for structuring a planar substrate composed of a glasslike material,characterized by a combination of the following method steps:
- provision of a semiconductor planar substrate composed of a semiconductor material,reduction of the thickness of said semiconductor planar substrate inside at least one surface region of said semiconductor planar substrate in order to form a raised surface region in relation to said surface planar region of reduced thickness,structuring said raised surface region of said semiconductor planar substrate by means of local mechanical removal of material in order to place impressions inside said raised surface regions,joining said structured surface of said semiconductor planar substrate with said glasslike planar substrate in such a manner that said glasslike planar substrate at least partially covers said surface planar region of reduced thickness,tempering said joined planar substrates in such a manner that in a first tempering phase, which is conducted under vacuum conditions, said glasslike planar substrate covering said surface region of reduced thickness forms a fluid-tight bond with said surface region of reduced thickness, with said planar substrate covering said impressions in a fluid-tight manner under vacuum conditions, and that in a second tempering phase, at least partial areas of the glasslike material flow into said impressions of said structured surface of said semiconductor planar substrate.
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Abstract
The invented method is distinguished by a combination of the following method steps:
- provision of a semiconductor planar substrate composed of a semiconductor material,
- reduction of the thickness of the semiconductor planar substrate inside at least one surface region of the semiconductor planar substrate in order to form a raised surface region in relation to the surface planar region of reduced thickness,
- structuring the raised surface region of the semiconductor planar substrate by means of local mechanical removal of material in order to place impressions inside the raised surface regions,
- joining the structured surface of the semiconductor planar substrate with the glasslike planar substrate in such a manner that the glasslike planar substrate at least partially covers the surface planar region of reduced thickness,
- tempering the joined planar substrates in such a manner that in a first tempering phase, which is conducted under vacuum conditions, the glasslike planar substrate covering the surface region of reduced thickness forms a fluid-tight bond with the surface region of reduced thickness, with the planar substrate covering the impressions in a fluid-tight manner under vacuum conditions, and that in a second tempering phase, at least partial areas of the glasslike material flow into the impressions of the structured surface of the semiconductor planar substrate.
33 Citations
39 Claims
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1. A method for structuring a planar substrate composed of a glasslike material,
characterized by a combination of the following method steps: -
provision of a semiconductor planar substrate composed of a semiconductor material, reduction of the thickness of said semiconductor planar substrate inside at least one surface region of said semiconductor planar substrate in order to form a raised surface region in relation to said surface planar region of reduced thickness, structuring said raised surface region of said semiconductor planar substrate by means of local mechanical removal of material in order to place impressions inside said raised surface regions, joining said structured surface of said semiconductor planar substrate with said glasslike planar substrate in such a manner that said glasslike planar substrate at least partially covers said surface planar region of reduced thickness, tempering said joined planar substrates in such a manner that in a first tempering phase, which is conducted under vacuum conditions, said glasslike planar substrate covering said surface region of reduced thickness forms a fluid-tight bond with said surface region of reduced thickness, with said planar substrate covering said impressions in a fluid-tight manner under vacuum conditions, and that in a second tempering phase, at least partial areas of the glasslike material flow into said impressions of said structured surface of said semiconductor planar substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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36. A method for structuring a planar substrate composed of a glasslike material,
characterized by a combination of the following methods steps: -
provision of a semiconductor planar substrate composed of a semiconductor material, reduction of the thickness of said semiconductor planar substrate inside at least one surface region of said semiconductor planar substrate in order to form a raised surface region in relation to said surface region of reduced thickness, structuring of said raised surface region of said semiconductor planar substrate by means of local mechanical removal of material in order to place impressions inside said raised surface region, structurally conform deposition of a metal layer onto said structured, raised surface region, joining said structured, metallized surface with said glasslike planar substrate in such a manner that said glasslike planar substrate at least partially covers said surface region of reduced thickness, tempering said joined planar substrates in such a manner that in a first tempering phase, which is conducted under vacuum conditions, said glasslike planar substrate covering said surface region of reduced thickness forms a fluid-tight bond with said surface region of reduced thickness, with said planar substrate covering said impressions under vacuum conditions in a fluid-tight manner, and that in a second tempering phase, at least partial areas of said glasslike material flow into said impressions of said structured, metallized surface of said semiconductor planar substrate. - View Dependent Claims (37, 38, 39)
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Specification