Semiconductor display device

• US 7,259,429 B2
• Filed: 10/14/2004
• Issued: 08/21/2007
• Est. Priority Date: 10/28/2003
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei
• Primary Examiner(s): CRANE, SARA W
• Application Number:
  US10/963,585
• Publication Number:
  US 20050087741A1
• Time in Patent Office: 1,041 Days
• Field of Search: 257/59, 257/72, 257/359, 257/356, 349/139
• US Class Current: 257/356
• CPC Class Codes: G02F 1/136204 Arrangements to prevent high voltage or static electricity failures
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile

Abstract

It is an object of the present invention to provide a semiconductor display device using a protective circuit in which dielectric breakdown is prevented more effectively. In the invention, in the cases that a first interlayer insulating film is formed covering a TFT used for a protective circuit and a second interlayer insulating film, which is an insulating coating film, is formed covering a wiring formed over the first interlayer insulating film, a wiring for connecting the TFT to other semiconductor elements is formed so as to be in contact with the surface of the second interlayer insulating film so as to secure a path discharging charge accumulated in the surface of the second interlayer insulating film. Note that the TFT used for the protective diode is a so-called diode-connected TFT in which either of the first terminal or the second terminal is connected to a gate electrode.

Claims

1. A semiconductor display device comprising:

at least a first thin film transistor and a second thin film transistor;

a first interlayer insulating film formed so as to cover the first thin film transistor and the second thin film transistor;

first, second and third wirings formed over and within the first interlayer insulating film;

a second interlayer insulating film formed over the first interlayer insulating film;

fourth and fifth wirings formed over and within the second interlayer insulating film; and

a display element formed over the second interlayer insulating film and connected to the fifth wiring,

wherein the first wiring is connected to a first terminal and a gate electrode included in the first thin film transistor through first and second contact holes formed in the first interlayer insulating film,

wherein the second wiring is connected to a second terminal included in the first thin film transistor through a third contact hole formed in the first interlayer insulating film,

wherein the third wiring is connected to a first terminal or a second terminal included in the second thin film transistor through a fourth contact hole formed in the first interlayer insulating film,

wherein the fourth wiring is connected to the second wiring through a fifth contact hole formed in the second interlayer insulating film, and

wherein the fifth wiring is connected to the third wiring through a sixth contact hole formed in the second interlayer insulating film.

3. A semiconductor display device according to claim 1,

wherein the display element is a light emitting element, the light emitting element comprising:

a first electrode;

an electroluminescent layer formed over the first electrode; and

a second electrode formed over the electroluminescent layer,

wherein the second electrode has a light-transparent property.

5. A semiconductor display device according to claim 1,

wherein the second interlayer insulating film is formed by a coating method.

7. A semiconductor display device according to claim 1,

wherein the second interlayer insulating film is formed of a plurality of insulating films and any one of the plurality of insulating films is formed by a coating method.

9. A semiconductor display device according to claim 1,

wherein the second interlayer insulating film comprises an organic resin film or an inorganic insulating film.

11. A semiconductor display device according to claim 1,

wherein the second interlayer insulating film comprises an insulating film formed by using a material of a siloxane group.

13. A semiconductor display device according to claim 1,

wherein the gate electrode included in the first thin film transistor and a gate electrode included in the second thin film transistor are taper-shaped.

15. An electronic equipment having the semiconductor display device according to claim 1.

16. An electronic equipment according to claim 15,

wherein the electronic equipment is selected from the group consisting of a video camera, a digital camera, a goggle type display, a navigation system, a sound reproduction device, a notebook type personal computer, a game machine, a personal digital assistant, an image reproduction apparatus including a recording medium.

19. A semiconductor display device according to claim 1, wherein the first thin film transistor is provided in a protective circuit and the second thin film transistor is provided in a pixel portion.

21. A semiconductor display device according to claim 19, wherein the protective circuit is provided between the pixel portion and a driver circuit.

23. A semiconductor display device according to claim 19, wherein the protective circuit is connected to a signal line.

25. A semiconductor display device according to claim 19, wherein the protective circuit is connected to a scanning line.

27. A semiconductor display device according to claim 1, wherein the first interlayer insulating film comprises a silicon oxide film, a silicon nitride film, or a silicon oxynitride film.

29. A semiconductor display device according to claim 1, further comprising:

a barrier formed over the second interlayer insulating film and the fourth and fifth wirings.

2. A semiconductor display device comprising:

at least first, second and third thin film transistors;

a first interlayer insulating film formed so as to cover the first, second and third thin film transistors;

first, second, third and fourth wirings formed over and within the first interlayer insulating film;

a second interlayer insulating film formed over the first interlayer insulating film;

fifth and sixth wirings formed over and within the second interlayer insulating film; and

a display element formed over the second interlayer insulating film and connected to the sixth wiring,

wherein the first wiring is connected to a first terminal and a gate electrode included in the first thin film transistor through first and second contact holes formed in the first interlayer insulating film,

wherein the second wiring is connected to a second terminal included in the first thin film transistor and a first terminal and a gate electrode included in the second thin film transistor through third, fourth and fifth contact holes formed in the first interlayer insulting film,

wherein the third wiring is connected to a second terminal included in the second thin film transistor through a sixth contact hole formed in the first interlayer insulating film,

wherein the fourth wiring is connected to a first terminal or a second terminal included in the third thin film transistor through a seventh contact hole formed in the first interlayer insulating film,

wherein the fifth wiring is connected to the second wiring through eighth and ninth contact holes formed in the second interlayer insulating film, and

wherein the sixth wiring is connected to the fourth wiring through a tenth contact hole formed in the second interlayer insulating film.

4. A semiconductor display device according to claim 2,

wherein the display element is a light emitting element, the light emitting element comprising:

a first electrode;

an electroluminescent layer formed over the first electrode; and

a second electrode formed over the electroluminescent layer,

wherein the second electrode has a light-transparent property.

6. A semiconductor display device according to claim 2,

wherein the second interlayer insulating film is formed by a coating method.

8. A semiconductor display device according to claim 2,

wherein the second interlayer insulating film is formed of a plurality of insulating films and any one of the plurality of insulating films is formed by a coating method.

10. A semiconductor display device according to claim 2,

wherein the second interlayer insulating film comprises an organic resin film or an inorganic insulating film.

12. A semiconductor display device according to claim 2,

wherein the second interlayer insulating film comprises an insulating film formed by using a material of a siloxane group.

14. A semiconductor display device according to claim 2,

wherein the gate electrode included in the first thin film transistor, the gate electrode included in the second thin film transistor and a gate electrode included in the third thin film transistor are taper-shaped.

17. An electronic equipment having the semiconductor display device according to claim 2.

18. An electronic equipment according to claim 17,

wherein the electronic equipment is selected from the group consisting of a video camera, a digital camera, a goggle type display, a navigation system, a sound reproduction device, a notebook type personal computer, a game machine, a personal digital assistant, an image reproduction apparatus including a recording medium.

20. A semiconductor display device according to claim 2, wherein the first and second thin film transistors are provided in a protective circuit and the third thin film transistor is provided in a pixel portion.

22. A semiconductor display device according to claim 20, wherein the protective circuit is provided between the pixel portion and a driver circuit.

24. A semiconductor display device according to claim 20, wherein the protective circuit is connected to a signal line.

26. A semiconductor display device according to claim 20, wherein the protective circuit is connected to a scanning line.

28. A semiconductor display device according to claim 2, wherein the first interlayer insulating film comprises a silicon oxide film, a silicon nitride film, or a silicon oxynitride film.

30. A semiconductor display device according to claim 2, further comprising:

a barrier formed over the second interlayer insulating film and the fifth and sixth wirings.