Micromechanical component and corresponding production method

• US 7,259,436 B2
• Filed: 03/22/2001
• Issued: 08/21/2007
• Est. Priority Date: 04/11/2000
• Status: Expired due to Term

• Current Assignee: Robert Bosch GmbH
• Original Assignee: Robert Bosch GmbH
• Inventors: Lutz, Markus, Offenberg, Michael
• Primary Examiner(s): Kunemund; Robert
• Assistant Examiner(s): RAO, G NAGESH
• Application Number:
  US10/018,180
• Publication Number:
  US 20030049878A1
• Time in Patent Office: 2,343 Days
• Field of Search: 257412-415, 117/84, 117/88
• US Class Current: 257/412
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 2203/0735 Post-CMOS, i.e. forming the micromechanical structure after the CMOS circuit

Abstract

A micromechanical component includes: a substrate; a micromechanical functional plane provided on the substrate; a covering plane provided on the micromechanical functional plane; and a printed circuit trace plane provided on the covering plane. The covering plane includes a monocrystalline region which is epitaxially grown on an underlying monocrystalline region, and the covering plane includes a polycrystalline region which is epitaxially grown on an underlying polycrystalline starting layer at the same time.

Claims

1. A micromechanical component, comprising:

a substrate;

a micromechanical functional plane provided on the substrate;

a covering plane provided on the micromechanical functional plane; and

a printed circuit trace plane provided on the covering plane;

wherein the covering plane includes a first monocrystalline region epitaxially grown on an underlying second monocrystalline region and a first polycrystalline region epitaxially grown on an underlying first polycrystalline starting layer, wherein the first monocrystalline region and the first polycrystalline region are adjacent to and coplanar with one another in a side by side manner.

2. The micromechanical component according to claim 1, wherein the micromechanical functional plane includes the second monocrystalline epitaxially grown on an underlying third monocrystalline region and a second polycrystalline region epitaxially grown on an underlying second polycrystalline starting layer at the same time.

3. The micromechanical component according to claim 1, wherein the micromechanical functional plane includes the second monocrystalline region, the second monocrystalline region including an SOI-type monocrystalline region formed above an insulator layer with the substrate.

4. The micromechanical component according to claim 1, wherein the first monocrystalline region of the covering plane includes at least one of at least one integrated circuit element of an evaluation circuit and at least one wiring element.

5. The micromechanical component according to claim 1, wherein a second polycrystalline region of the micromechanical functional plane includes a movable sensor structure.

6. The micromechanical component according to claim 5, wherein the micromechanical functional plane includes a buried polysilicon layer underneath the movable sensor structure.

7. The micromechanical component according to claim 1, wherein the printed circuit trace plane includes at least one flip-chip connection element.

8. The micromechanical component according to claim 7, wherein the flip-chip connection element includes a gold bump.

9. The micromechanical component according to claim 1, wherein the micromechanical component is configured to be manufactured by silicon-surface micromachining.

10. A method for manufacturing a micromechanical component, comprising the steps of:

providing a substrate;

providing a micromechanical functional plane on the substrate;

providing a covering plane on the micromechanical functional plane;

providing a polysilicon starting layer region-wise on the micromechanical functional plane and leaving open region-wise a first monocrystalline region of the micromechanical functional plane;

epitaxially depositing a second monocrystalline region on the first monocrystalline region left open and epitaxially depositing a polycrystalline region on the polysilicon starting layer at the same time, wherein the second monocrystalline region and the polycrystalline region are adjacent to and coplanar with one another in a side by side manner; and

providing a printed circuit trace plane on the covering plane.