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Integrated circuit with increased heat transfer

  • US 7,259,458 B2
  • Filed: 02/03/2005
  • Issued: 08/21/2007
  • Est. Priority Date: 08/18/2004
  • Status: Active Grant
First Claim
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1. An integrated circuit die comprising:

  • at least one lateral side of the die having a varying profile, the varying profile substantially increasing the surface area of a thermal interface formed on the lateral side as compared to the lateral side being substantially planar,wherein the lateral side of the die is orthogonal to layers of the integrated circuit die forming circuit elements.

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