Integrated circuit with increased heat transfer
First Claim
1. An integrated circuit die comprising:
- at least one lateral side of the die having a varying profile, the varying profile substantially increasing the surface area of a thermal interface formed on the lateral side as compared to the lateral side being substantially planar,wherein the lateral side of the die is orthogonal to layers of the integrated circuit die forming circuit elements.
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Accused Products
Abstract
A technique for improving the thermal power dissipation of an integrated circuit includes reducing the thermal resistivity of the integrated circuit by increasing heat transfer in vertical and/or lateral directions. These results are achieved by increasing the surface area of the backside and/or the surface area of the lateral sides of the integrated circuit die. In some embodiments of the invention, an integrated circuit includes circuit elements formed closer to a first surface of a semiconductor substrate than to a second surface of the semiconductor substrate. The semiconductor substrate has a varying profile that substantially increases the surface area of a thermal interface formed on the second surface as compared to the second surface being substantially planar. A maximum depth of the profile is less than the thickness of the semiconductor substrate.
26 Citations
18 Claims
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1. An integrated circuit die comprising:
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at least one lateral side of the die having a varying profile, the varying profile substantially increasing the surface area of a thermal interface formed on the lateral side as compared to the lateral side being substantially planar, wherein the lateral side of the die is orthogonal to layers of the integrated circuit die forming circuit elements. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. An apparatus comprising:
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a lateral surface of an integrated circuit die, the lateral surface having a varying profile, the varying profile substantially increasing the surface of the lateral surface as compared to a substantially planar lateral surface; and a thermally conductive layer formed on the lateral surface and configured to reduce a thermal resistivity of the integrated circuit die by thermal dissipation, wherein the lateral surface of the integrated circuit die is orthogonal to layers of the integrated circuit die forming circuit elements.
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17. An apparatus comprising:
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a first surface of a semiconductor substrate, the first surface having a varying profile, the varying profile substantially increasing the surface area of the first surface as compared to a substantially planar first surface, circuit elements being formed closer to a second surface of the semiconductor substrate than to the first surface; a thermally conductive layer formed on the first surface and configured to reduce a thermal resistivity of the die by thermal dissipation; wherein the thermally conductive layer is electrically isolated from the circuit elements; and wherein a dielectric layer formed between the second surface of the semiconductor substrate and the circuit elements. - View Dependent Claims (18)
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Specification