Lithographic apparatus and device manufacturing method

• US 7,259,829 B2
• Filed: 07/26/2004
• Issued: 08/21/2007
• Est. Priority Date: 07/26/2004
• Status: Active Grant

• Current Assignee: Advanced Micro Devices, Inc., ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Bleeker, Arno J., Tel, Wim T.
• Primary Examiner(s): FULLER, RODNEY EVAN
• Application Number:
  US10/898,667
• Publication Number:
  US 20060017903A1
• Time in Patent Office: 1,121 Days
• Field of Search: 355/53, 355/67, 355/77, 430/5
• US Class Current: 355/67
• CPC Class Codes: G03F 7/70291 Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
• CPC Class Codes: G03F 7/70525 Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure

Abstract

A lithographic apparatus is provided that uses an array of individually controllable elements to pattern the beam of radiation. The critical dimension uniformity of a substrate patterned using the apparatus is improved by adjusting the pattern data provided to the array of individually controllable elements to compensate for process variation.

Claims

1. A lithographic apparatus, comprising:

an illumination system that supplies a beam of radiation;

an array of individually controllable elements that pattern the beam;

a projection system that projects the patterned beam onto a target portion of a substrate; and

a controller that controls a pattern formed using the array of individually controllable elements using (a) intended pattern data, which corresponds to a pattern to be exposed on the substrate, and (b) processing conditions data, which corresponds to at least one processing condition of the substrate, wherein the controller controls a size of at least one feature of the pattern relative to a size of the pattern specified by the intended pattern data based on the processing condition data.

2. The lithographic apparatus of claim 1, wherein:

an intensity of the patterned beam is set to any one of at least three intensity levels; and

the controller controls, based on the processing conditions data, which of the at least three intensity levels at least one feature of the pattern in the patterned beam is set to relative to an intensity level specified for the at least one feature in the intended pattern data.

3. The lithographic apparatus of claim 1, wherein the processing conditions data comprises data corresponding to at least one of:

a type of resist applied to the substrate;

process conditions of applying the resist to the substrate;

a time period correlated to at least two processing operations;

process conditions of baking the substrate after exposure;

process conditions of chilling the substrate after baking the substrate;

process conditions of developing the substrate;

transport of the substrate between the lithographic apparatus and apparatus for performing other processes on the substrate; and

expected process conditions in subsequent etching, ion implantation, metalization, oxidation, chemomechanical polishing, and/or cleaning processes.

4. The lithographic apparatus of claim 1, wherein:

the processing conditions data corresponding to at least one process condition is different at two or more areas on the substrate; and

the controller selects and uses the processing conditions data corresponding to the target portion on the substrate when setting the pattern on the array of individually controllable elements to expose said target portion.

5. The lithographic apparatus of claim 1, wherein at least a part of the processing conditions data is generated from data previously recorded and corresponding to process conditions during processing of a previously processed substrate in at least one of an apparatus that has performed a process on the substrate and an apparatus that is scheduled to perform a process on the substrate.

6. The lithographic apparatus of claim 1, wherein the pattern to be set on the array of individually controllable elements for each part of the exposure of a pattern layer on the substrate is determined before the exposure of the pattern layer on the substrate commences.

7. The lithographic apparatus of claim 1, wherein the pattern to be set by the array of individually controllable elements for at least one part of the exposure of a pattern layer on the substrate is determined during the exposure of that pattern layer on the substrate.

8. The lithographic apparatus of claim 1, wherein the controller comprises:

a memory that stores transformation data corresponding to a difference between pattern data specified in the intended pattern data and the pattern to be set by the array of individually controllable elements for given processing conditions data.

9. The lithographic apparatus of claim 8, wherein the transformation data is updated based on a comparison of at least one feature intended to be generated on the substrate and an inspection of the corresponding at least one feature subsequently generated on the substrate.

10. The lithographic apparatus of claim 9, wherein the controller uses one or more modified versions of the transformation data for given processing conditions data at a plurality of locations on the substrate during the exposure of a pattern layer on the substrate.

11. The lithographic apparatus of claim 9, further comprising:

a detector that inspects at least one feature of the pattern generated on the substrate,

wherein the controller compares the at least one inspected pattern feature with the corresponding at least one intended pattern feature and updates the transformation data.

12. A device manufacturing methods, comprising:

forming a pattern with an array of individually controllable elements using (1) intended pattern data, which corresponds to a pattern to be exposed on the substrate, and (2) processing conditions data, which corresponds to at least one processing condition of the substrate, wherein the processing conditions data controls a size of at least one feature of the pattern relative to a size of the pattern specified by the intended pattern;

patterning a beam of radiation using the formed patterned on the array of individually controllable elements; and

projecting the patterned beam onto a target portion of a substrate.

13. A lithographic apparatus, comprising:

an illumination system configured to supply a beam of radiation;

an array of individually controllable elements configured to pattern the beam of radiation,;

a projection system that projects the patterned beam onto a target portion of a substrate; and

a controller configured to set an intensity of the patterned beam to any one of at least three intensity levels and to control a pattern formed using the array of individually controllable elements using (a) intended pattern data, which corresponds to a pattern to be exposed on the substrate, and (b) processing conditions data, which corresponds to at least one processing condition of the substrate, wherein the controller is configured to also control which of the at least three intensity levels at least one feature of the pattern in the patterned beam is set to relative to an intensity level specified for the at least one feature in the intended pattern data based on the processing conditions data.

14. The lithographic apparatus of claim 13, wherein the processing conditions data comprises data corresponding to at least one of:

a type of resist applied to the substrate;

process conditions of applying the resist to the substrate;

a time period correlated to at least two processing operations;

process conditions of baking the substrate after exposure;

process conditions of chilling the substrate after baking the substrate;

process conditions of developing the substrate;

transport of the substrate between the lithographic apparatus and apparatus for performing other processes on the substrate; and

expected process conditions in subsequent etching, ion implantation, metalization, oxidation, chemomechanical polishing, and/or cleaning processes.

15. The lithographic apparatus of claim 13, wherein:

the processing conditions data corresponding to at least one process condition is different at two or more areas on the substrate; and

the controller selects and uses the processing conditions data corresponding to the target portion on the substrate when setting the pattern on the array of individually controllable elements to expose said target portion.

16. The lithographic apparatus of claim 13, wherein at least a part of the processing conditions data is generated from data previously recorded and corresponding to process conditions during processing of a previously processed substrate in at least one of an apparatus that has performed a process on the substrate and an apparatus that is scheduled to perform a process on the substrate.

17. The lithographic apparatus of claim 13, wherein the pattern to be set on the array of individually controllable elements for each part of the exposure of a pattern layer on the substrate is determined one or before or during the exposure of the pattern layer on the substrate commences.

18. The lithographic apparatus of claim 13, wherein the controller comprises:

a memory that stores transformation data corresponding to a difference between pattern data specified in the intended pattern data and the pattern to be set by the array of individually controllable elements for given processing conditions data.

19. The lithographic apparatus of claim 18, wherein the transformation data is updated based on a comparison of at least one feature intended to be generated on the substrate and an inspection of the corresponding at least one feature subsequently generated on the substrate.

20. The lithographic apparatus of claim 19, wherein the controller uses one or more modified versions of the transformation data for given processing conditions data at a plurality of locations on the substrate during the exposure of a pattern layer on the substrate.

21. The lithographic apparatus of claim 19, further comprising:

a detector that inspects at least one pattern feature generated on the substrate,

wherein the controller compares the at least one inspected pattern feature with the corresponding at least one intended pattern feature and updates the transformation data.

22. A lithographic method, comprising:

controlling a pattern formed by an array of individually controllable elements using (1) intended pattern data, which corresponds to a pattern to be exposed on the substrate, and (2) processing conditions data, which corresponds to at least one processing condition of the substrate, wherein the processing conditions data determines which one of at least three intensity levels of the beam to use for at least one feature in the intended pattern data;

patterning a beam of radiation using the formed patterned; and

projecting the patterned beam onto a target portion of a substrate.