Process control monitors for interferometric modulators

• US 7,259,865 B2
• Filed: 11/17/2005
• Issued: 08/21/2007
• Est. Priority Date: 09/27/2004
• Status: Expired due to Fees

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: IDC, LLC
• Inventors: Cummings, William, Gally, Brian
• Primary Examiner(s): LEE, HWA S
• Application Number:
  US11/281,136
• Publication Number:
  US 20060066871A1
• Time in Patent Office: 642 Days
• Field of Search: 356/506, 356/519, 356/480, 356/503, 250/599.27
• US Class Current: 356/503
• CPC Class Codes: B81B 2201/042 Micromirrors, not used as optical switches
• CPC Class Codes: B81C 99/004 during manufacturing
• CPC Class Codes: G01N 21/55 Specular reflectivity
• CPC Class Codes: G01N 21/9501 Semiconductor wafers manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26

Abstract

Process control monitors are disclosed that are produced using at least some of the same process steps used to manufacture a MEMS device. Analysis of the process control monitors can provide information regarding properties of the MEMS device and components or sub-components in the device. This information can be used to identify errors in processing or to optimize the MEMS device. In some embodiments, analysis of the process control monitors may utilize optical measurements.

Claims

1. A method of monitoring deposition of material deposited during manufacturing of a micro-electro-mechanical system (MEMS), comprising:

forming a process control monitor that consists of at least three layers of material deposited during the manufacturing, wherein the at least three layers of material is less than the number of layers deposited during manufacturing of the MEMS, wherein the at least three layers of material form an etalon, wherein forming the process control monitor comprises exposing the process control monitor to the same material deposition and patterning steps as used during the manufacturing; and

detecting light reflected from the etalon with a light detector.

6. The method of claim 1, further comprising

determining the depth of the etalon from the detected light;

and

outputting the depth.

7. The method of claim 1, wherein the detecting comprises measuring the reflected light with a photodetector.

8. The method of claim 1, wherein the detecting comprises measuring a spectrum of the reflected light with a spectrometer.

9. The method of claim 8, further comprising fitting the spectrum with a model of light reflected from an etalon.

11. The method of claim 1, wherein detecting the reflected light comprises detecting reflectance from a side of the process control monitor where the at least three layers of material are deposited during formation of the process control monitor.

12. The method of claim 1, wherein the at least three layers of material are deposited onto a substrate during formation of the process control monitor and detecting the reflected light comprises detecting reflectance from a side of the substrate opposite the side where the at least three layers of material are deposited.

2. A method of monitoring deposition of material deposited during manufacturing of a micro-electro-mechanical system (MEMS), comprising:

forming a process control monitor that consists of at least three layers of material deposited during the manufacturing, wherein the at least three layers of material is less than the number of layers deposited during manufacturing of the MEMS, wherein the at least three layers of material form an etalon, wherein forming the process control monitor comprises exposing the process control monitor to the same material deposition steps as used during the manufacturing;

detecting light reflected from the etalon with a light detector;

determining an index of refraction of at least one of the materials from the detected light; and

outputting the index of refraction.

3. A method of monitoring deposition of material deposited during manufacturing of a micro-electro-mechanical system (MEMS), comprising:

forming a process control monitor that consists of at least three layers of material deposited during the manufacturing, wherein the at least three layers of material is less than the number of layers deposited during manufacturing of the MEMS, wherein the at least three layers of material form an etalon, wherein forming the process control monitor comprises exposing the process control monitor to the same patterning steps as used during the manufacturing;

detecting light reflected from the etalon with a light detector;

determining reflectivity of at least one of the materials from the detected light; and

outputting the reflectivity.

4. A method of monitoring deposition of material deposited during manufacturing of a micro-electro-mechanical system (MEMS), comprising:

forming a process control monitor that consists of at least three layers of material deposited during the manufacturing, wherein the at least three layers of material is less than the number of layers deposited during manufacturing of the MEMS, wherein the at least three layers of material form an etalon, wherein forming the process control monitor comprises exposing the process control monitor to the same manufacturing steps as used during the manufacturing of the MEMS;

detecting light reflected from the etalon with a light detector;

determining transmittance of at least one of the materials from the detected light; and

outputting the transmittance.

5. A method of monitoring deposition of material deposited during manufacturing of a micro-electro-mechanical system (MEMS), comprising:

forming a process control monitor that consists of at least three layers of material deposited during the manufacturing, wherein the at least three layers of material is less than the number of layers deposited during manufacturing of the MEMS, wherein the at least three layers of material form an etalon, wherein forming the process control monitor comprises exposing the process control monitor to the same material deposition steps as used during the manufacturing;

detecting light reflected from the etalon with a light detector;

determining the thickness of at least one of the materials from the detected light; and

outputting the thickness.

10. A method of monitoring deposition of material deposited during manufacturing of a micro-electro-mechanical system (MEMS), comprising:

forming a process control monitor that consists of at least three layers of material deposited during the manufacturing, wherein the at least three layers of material is less than the number of layers deposited during manufacturing of the MEMS, wherein the at least three layers of material form an etalon, wherein the process control monitor is formed at the same time that the MEMS is manufactured; and

detecting light reflected from the etalon with a colorimeter.

13. A method of monitoring deposition of material deposited during manufacturing of a micro-electro-mechanical system (MEMS), comprising:

forming a process control monitor comprising one or more layers of material deposited during the manufacturing, wherein the number of layers of material in the process control monitor is less than the number of layers deposited during manufacturing of the MEMS, wherein forming the process control monitor comprises applying an identical sequence of material deposition and patterning steps as used in the manufacturing of the MEMS; and

detecting the reflectance of the process control monitor with a light detector.

14. The method of claim 13, wherein a final layer of material formed in the process control monitor is substantially reflective.

18. The method of claim 13, wherein the detecting comprises measuring a spectrum of light reflected from the process control monitor.

19. The method of claim 13, wherein detecting the reflectance comprises detecting reflectance from a side of the process control monitor where the one or more layers of material are deposited during formation of the process control monitor.

20. The method of claim 13, wherein the one or more layers of material are deposited onto a substrate during formation of the process control monitor and detecting the reflectance comprises detecting reflectance from a side of the substrate opposite the side where the one or more layers of material are deposited.

15. A method of monitoring deposition of material deposited during manufacturing of a micro-electro-mechanical system (MEMS), comprising:

forming a process control monitor comprising one or more layers of material deposited during the manufacturing, wherein the number of layers of material in the process control monitor is less than the number of layers deposited during manufacturing of the MEMS, wherein forming the process control monitor comprises exposing the process control monitor to the same material deposition steps as used during the manufacturing;

detecting the reflectance of the process control monitor with a light detector;

determining the reflectance of one of the layers in the process control monitor; and

outputting the reflectance.

16. A method of monitoring deposition of material deposited during manufacturing of a micro-electro-mechanical system (MEMS), comprising:

forming a process control monitor comprising one or more layers of material deposited during the manufacturing, wherein the number of layers of material in the process control monitor is less than the number of layers deposited during manufacturing of the MEMS, wherein forming the process control monitor comprises exposing the process control monitor to the same manufacturing steps as used during the manufacturing of the MEMS;

detecting the reflectance of the process control monitor with a light detector;

determining the transmittance of one of the layers in the process control monitor; and

outputting the transmittance.

17. A method of monitoring deposition of material deposited during manufacturing of a micro-electro-mechanical system (MEMS), comprising:

forming a process control monitor comprising one or more layers of material deposited during the manufacturing, wherein the number of layers of material in the process control monitor is less than the number of layers deposited during manufacturing of the MEMS, wherein forming the process control monitor comprises exposing the process control monitor to the same material deposition steps as used during the manufacturing;

detecting the reflectance of the process control monitor with a light detector;

determining the thickness of one of the layers in the process control monitor; and

outputting the thickness.