Semiconductor fabricating apparatus with function of determining etching processing state

• US 7,259,866 B2
• Filed: 11/30/2005
• Issued: 08/21/2007
• Est. Priority Date: 03/04/2003
• Status: Expired due to Term

• Current Assignee: Hitachi High-Tech Company Limited (Hitachi, Ltd.)
• Original Assignee: Hitachi High-Technologies Corporation (Hitachi, Ltd.)
• Inventors: Yoshigai, Motohiko, Usui, Tatehito, Ono, Tetsuo, Jyouo, Kazuhiro
• Primary Examiner(s): LEE, HWA S
• Application Number:
  US11/289,394
• Publication Number:
  US 20060077397A1
• Time in Patent Office: 629 Days
• Field of Search: 356/451, 356/503, 356/504, 356/519, 536/19
• US Class Current: 356/503
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring

Abstract

A semiconductor fabricating apparatus for etching a semiconductor wafer, which is placed in a chamber and which has a multiple-layer film composed of a first film formed on a surface thereof and a second film formed on the first film, using plasma generated in the chamber. The semiconductor fabricating apparatus includes a light detector that detects a change in an amount of light with a plurality of wavelengths obtained from the surface of the wafer for a predetermined time during which the second film is etched, and a detection unit that detects a thickness of the first film based on a specific waveform obtained from an output of the detector.

Claims

1. A semiconductor fabricating method for etching a semiconductor wafer, comprising the steps of:

placing the semiconductor wafer having a film thereon inside of a chamber;

generating plasma inside of the chamber;

detecting a quantity of interference lights for each of at least two wavelengths obtained from a surface of the wafer for a predetermined time period during the etching of the wafer;

detecting a first time point at which the detected quantity of the interference lights for one of the two wavelengths becomes a maximum and a second time point at which the detected quantity of the interference lights for the other wavelength becomes a minimum;

determining a state of the etching based on a result of comparing a predetermined value with an interval between the first time point and the second time point, wherein both the first and second time points are detected by using outputs of a detector for detecting a quantity of the interference lights; and

controlling the etching in accordance with a result of the determining.

2. The semiconductor fabricating method according to claim 1, further comprising the steps of:

determining a thickness of the film being etched when the interval is determined to be smaller than the predetermined value; and

wherein said controlling the etching step is performed in accordance with the results of both determining steps.

3. The semiconductor fabricating method according to claim 1, further comprising the step of:

stopping the etching processing when the interval is determined to be smaller than the predetermined value.

4. The semiconductor fabricating method according to claim 2, further comprising the step of:

stopping the etching processing when the interval is determined to be smaller than the predetermined value.