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Program control circuit of flash memory device having MLC and method thereof

  • US 7,259,976 B2
  • Filed: 12/21/2005
  • Issued: 08/21/2007
  • Est. Priority Date: 06/30/2005
  • Status: Active Grant
First Claim
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1. A program control method of a flash memory device including a plurality of MLCs that shares word lines and bit lines, comprising:

  • a first program to affect programming of MLCs of a selected page by applying a program voltage, which is increased by a step voltage, to a selected word line of the word lines during a first predetermined time in each of first to Ith (I is an integer) program cycles in response to a first cycle control signal;

    a second program to affect programming of the MLCs of the selected page by applying a first last program voltage (i.e., a program voltage that has been finally increased in the first program step) to the selected word line, while increasing the last program voltage by a step voltage, during a second predetermined time in each of first to (I+1)th to Jth (J is an integer) program cycles in response to a second cycle control signal; and

    a third program to affect programming of the MLCs of the selected page by applying a second last program voltage (i.e., a program voltage that has been finally increased in the second program step) to the selected word line, while increasing the second to last program voltage by the step voltage, during a third predetermined time in each of first to (J+1)th to Kth (K is an integer) program cycles in response to a third cycle control signal.

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