Semiconductor light-emitting apparatus having wavelength conversion portion and method of fabricating the same
First Claim
1. A semiconductor light-emitting apparatus comprising:
- a base having a concave portion with a bottom and an opening;
a pair of electrodes located adjacent the bottom of the concave portion;
a semiconductor light-emitting device located adjacent the bottom of the concave portion and being electrically connected with the pair of electrodes;
a wavelength conversion portion capable of changing the wavelength of light emitted from the semiconductor light-emitting device, wherein the wavelength conversion portion includes a first wavelength conversion layer formed adjacent the bottom of the concave portion and a second wavelength conversion layer formed in the opening of the concave portion and at a distance above the semiconductor light-emitting device; and
a space defined by the base and the second wavelength conversion layer, the space being provided with a sealing portion containing a material capable of substantially transmitting the light emitted from the semiconductor light-emitting device and wavelength conversion light emitted from the first and second wavelength conversion layers, whereinthe first wavelength conversion layer is formed in a bottom portion of the sealing portion.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor light-emitting apparatus which has a simple structure can include a base having a concave portion having an upward opening, a semiconductor light-emitting device placed on the bottom of the concave portion, and a wavelength conversion portion for converting the wavelength of light emitted from the semiconductor light-emitting device. The wavelength conversion portion can include first and second wavelength conversion layers formed on the bottom of the concave portion and in the opening thereof at a distance above the device, respectively. A space defined by the base having the concave portion and the second wavelength conversion layer can be provided with a sealing portion containing a material for transmitting the light emitted from the semiconductor device and light that is emitted from the first and second wavelength conversion layers.
40 Citations
18 Claims
-
1. A semiconductor light-emitting apparatus comprising:
-
a base having a concave portion with a bottom and an opening; a pair of electrodes located adjacent the bottom of the concave portion; a semiconductor light-emitting device located adjacent the bottom of the concave portion and being electrically connected with the pair of electrodes; a wavelength conversion portion capable of changing the wavelength of light emitted from the semiconductor light-emitting device, wherein the wavelength conversion portion includes a first wavelength conversion layer formed adjacent the bottom of the concave portion and a second wavelength conversion layer formed in the opening of the concave portion and at a distance above the semiconductor light-emitting device; and a space defined by the base and the second wavelength conversion layer, the space being provided with a sealing portion containing a material capable of substantially transmitting the light emitted from the semiconductor light-emitting device and wavelength conversion light emitted from the first and second wavelength conversion layers, wherein the first wavelength conversion layer is formed in a bottom portion of the sealing portion. - View Dependent Claims (2, 3, 4, 6, 12, 13, 14, 15)
-
-
5. A semiconductor light-emitting apparatus comprising:
-
a base having a concave portion with a bottom and an opening; a pair of electrodes located adjacent the bottom of the concave portion; a semiconductor light-emitting device located adjacent the bottom of the concave portion and being electrically connected with the pair of electrodes; a wavelength conversion portion capable of changing the wavelength of light emitted from the semiconductor light-emitting device, wherein the wavelength conversion portion includes a first wavelength conversion layer formed adjacent the bottom of the concave portion and a second wavelength conversion layer formed in the opening of the concave portion and at a distance above the semiconductor light-emitting device; and a space defined by the base and the second wavelength conversion layer, the space being provided with a sealing portion containing a material capable of substantially transmitting the light emitted from the semiconductor light-emitting device and wavelength conversion light emitted from the first and second wavelength conversion layers, wherein the second wavelength conversion layer is formed to cover the entire opening of the concave portion.
-
-
7. A method of fabricating a semiconductor light-emitting apparatus comprising:
-
providing a base having a concave portion with a bottom, a pair of electrodes, a semiconductor light-emitting device located adjacent the bottom of the concave portion and being electrically connected with the pair of electrodes, a wavelength conversion portion configured to change the wavelength of light emitted from the semiconductor light-emitting device, and a sealing portion having a constituent material and being located adjacent the concave portion; loading the semiconductor light-emitting device onto the concave portion of the base so as to be electrically connected with the pair of electrodes; forming a first wavelength conversion layer configured to perform as the wavelength conversion portion on the bottom of the concave portion; injecting the constituent material of the sealing portion into the concave portion; hardening the constituent material of the sealing portion to form the sealing portion; and forming a second wavelength conversion layer configured to perform as the wavelength conversion portion on the sealing portion, wherein forming a first wavelength conversion layer includes forming the first wavelength conversion layer along a substantially flat planar portion of the bottom of the concave portion. - View Dependent Claims (8, 9, 16, 17)
-
-
10. A method of fabricating a semiconductor light-emitting apparatus comprising:
-
providing a base having a concave portion with a bottom, a pair of electrodes, a semiconductor light-emitting device located adjacent to the bottom of the concave portion and being electrically connected with the pair of electrodes, a wavelength conversion portion configured to change the wavelength of light emitted from the semiconductor light-emitting device, and a sealing portion; loading the semiconductor light-emitting device onto the concave portion of the base so as to be electrically connected with the pair of electrodes; injecting a mixed material into the concave portion, the mixed material being a mixture of a material for forming the sealing portion and a wavelength conversion material for forming the wavelength conversion portion; densifying the wavelength conversion material along a substantially flat planar portion of a bottom area of the concave portion so that a part of the bottom area of the concave portion where the wavelength conversion material is densified creates a first wavelength conversion layer configured to perform as the wavelength conversion portion; forming the sealing portion by hardening the mixed material in the concave portion where the first wavelength conversion layer is formed; and forming a second wavelength conversion layer configured to perform as the wavelength conversion portion on the sealing portion. - View Dependent Claims (11)
-
-
18. A method of fabricating a semiconductor light-emitting apparatus comprising:
-
providing a base having a concave portion with a bottom, a pair of electrodes, a semiconductor light-emitting device located adjacent to the bottom of the concave portion and being electrically connected with the pair of electrodes, a wavelength conversion portion configured to change the wavelength of light emitted from the semiconductor light-emitting device, and a sealing portion; loading the semiconductor light-emitting device onto the concave portion of the base so as to be electrically connected with the pair of electrodes; injecting a mixed material into the concave portion, the mixed material being a mixture of a material for forming the sealing portion and a wavelength conversion material for forming the wavelength conversion portion; densifying the wavelength conversion material in a bottom area of the concave portion so that a part of the bottom area of the concave portion where the wavelength conversion material is densified creates a first wavelength conversion layer configured to perform as the wavelength conversion portion; forming the sealing portion by hardening the mixed material in the concave portion where the first wavelength conversion layer is formed; and forming a second wavelength conversion layer configured to perform as the wavelength conversion portion on the sealing portion, wherein forming the first wavelength conversion layer includes forming the first wavelength conversion layer on both the bottom surface of the concave portion and a top surface of the semiconductor light emitting device.
-
Specification