Method of forming mirrors by surface transformation of empty spaces in solid state materials

• US 7,260,125 B2
• Filed: 04/05/2005
• Issued: 08/21/2007
• Est. Priority Date: 05/16/2001
• Status: Expired due to Term

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Marsh, Eugene P., Geusic, Joseph E.
• Primary Examiner(s): Rodriguez; Armando
• Application Number:
  US11/098,552
• Publication Number:
  US 20050175058A1
• Time in Patent Office: 868 Days
• Field of Search: 372/29.023, 372/9
• US Class Current: 372/29.023
• CPC Class Codes: G02B 5/0883 with a refractive index gradient rugate filters G02B5/289
• CPC Class Codes: H01S 3/0627 the resonator being monolithic, e.g. microlaser
• CPC Class Codes: H01S 3/08059 Constructional details of the reflector, e.g. shape mirrors in general G02B5/08; mountings for mirrors G02B7/18

Abstract

A multi-layered reflective mirror formed of spaced-apart plate-shaped empty space patterns formed within a substrate is disclosed. The plurality of plate-shaped empty space patterns are formed by drilling holes in the substrate and annealing the substrate to form the spaced-apart plate-shaped empty space patterns.

Claims

1. A method of modifying the transmission of an electromagnetic wave, said method comprising the steps of:

transmitting said electromagnetic wave through a monocrystalline substrate, said monocrystalline substrate comprising at least one plate-shaped empty spaced pattern within, and surrounded by, said monocrystalline substrate, and below a surface of said monocrystalline substrate, said at least one plate-shaped empty spaced pattern being positioned along a transmission axis of said electromagnetic wave; and

phase-shifting said electromagnetic wave as it passes through said monocrystalline substrate.

2. The method of claim 1, wherein said electromagnetic wave is phase-shifted about 180 degrees.

3. The method of claim 1 further comprising the act of forming at least one hole within said monocrystalline substrate and annealing said monocrystalline substrate to form said at least one plate-shaped empty spaced pattern beneath said surface of said monocrystalline substrate.

4. The method of claim 3, wherein said act of annealing is performed under a reducing atmosphere.

5. The method of claim 4, wherein said reducing atmosphere is a hydrogen atmosphere at a temperature lower than the melting temperature of said monocrystalline substrate.

6. The method of claim 1 further comprising the act of forming at least two plate-shaped empty spaced patterns positioned along said transmission axis of said electromagnetic wave.

7. The method of claim 6, wherein said at least two plate-shaped empty spaced patterns are formed sequentially.

8. The method of claim 6, wherein said at least two plate-shaped empty spaced patterns are formed simultaneously.

9. The method of claim 8, wherein one of said plate-shaped empty spaced patterns is located below said other plate-shaped empty spaced pattern relative to said surface of said monocrystalline substrate.

10. The method of claim 8, wherein said plate-shaped empty spaced patterns have same thicknesses.

11. The method of claim 8, wherein said plate-shaped empty spaced patterns have different thicknesses.

12. The method of claim 1, wherein said monocrystalline substrate is a germanium substrate.

13. The method of claim 1, wherein said monocrystalline substrate is a silicon substrate.

14. The method of claim 1, wherein said monocrystalline substrate is a silicon-on-insulator substrate.

15. The method of claim 1, wherein said monocrystalline substrate is a silicon-on-nothing substrate.

16. The method of claim 1, wherein said monocrystalline substrate is a gallium arsenide substrate.